BD250, BD250A, BD250B, BD250C
PNP SILICON POWER TRANSISTORS
PRODUCT INFORMATION
1
JUNE 1973 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
●Designed for Complementary Use with the
BD249 Series
●125 W at 25°C Case Temperature
●25 A Continuous Collector Current
●40 A Peak Collector Current
●Customer-Specified Selections Available
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base. MDTRAA
B
C
E
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
RATINGSYMBOLVALUEUNIT
Collector-emitter voltage (RBE = 100 Ω)
BD250
BD250A
BD250B
BD250C
VCER
-55
-70
-90
-115
V
Collector-emitter voltage (IC = -30 mA)
BD250
BD250A
BD250B
BD250C
VCEO
-45
-60
-80
-100
V
Emitter-base voltageVEBO-5V
Continuous collector current IC-25A
Peak collector current (see Note 1)ICM-40A
Continuous base current IB-5A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)Ptot125W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)Ptot3W
Unclamped inductive load energy (see Note 4)½LIC290mJ
Operating junction temperature rangeTj-65 to +150°C
Storage temperature rangeTstg-65 to +150°C
Lead temperature 3.2 mm from case for 10 secondsTL250°C
BD250, BD250A, BD250B, BD250C
PNP SILICON POWER TRANSISTORS
2
JUNE 1973 - REVISED MARCH 1997
PRODUCT INFORMATION
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
V(BR)CEOCollector-emitter
breakdown voltageIC = -30 mA
(see Note 5)IB = 0
BD250
BD250A
BD250B
BD250C
-45
-60
-80
-100
V
ICESCollector-emitter
cut-off current
VCE= -55 V
VCE= -70 V
VCE= -90 V
VCE=-115 V
VBE =0
VBE =0
VBE =0
VBE =0
BD250
BD250A
BD250B
BD250C
-0.7
-0.7
-0.7
-0.7
mA
ICEOCollector cut-off
currentVCE= -30 V
VCE= -60 VIB=0
IB=0BD250/250A
BD250B/250C-1
-1mA
IEBOEmitter cut-off
currentVEB = -5 VIC=0-1mA
hFEForward current
transfer ratio
VCE = -4 V
VCE = -4 V
VCE = -4 V
IC=-1.5A
IC= -15A
IC= -25A(see Notes 5 and 6)25
10
5
VCE(sat)Collector-emitter
saturation voltageIB = -1.5 A
IB = -5 AIC= -15A
IC= -25A(see Notes 5 and 6)-1.8
-4V
VBEBase-emitter
voltageVCE = -4 V
VCE = -4 VIC= -15 A
IC= -25 A(see Notes 5 and 6)-2
-4V
hfeSmall signal forward
current transfer ratioVCE = -10 VIC= -1Af = 1 kHz25
|hfe|Small signal forward
current transfer ratioVCE = -10 VIC= -1Af = 1 MHz3
thermal characteristics
PARAMETERMINTYPMAXUNIT
RθJCJunction to case thermal resistance 1 °C/W
RθJAJunction to free air thermal resistance 42 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETERTEST CONDITIONS †MINTYPMAXUNIT
ton Turn-on timeIC = -5 A
VBE(off) = 5 VIB(on) = -0.5 A
RL = 5 ΩIB(off) = 0.5 A
tp = 20 µs, dc ≤ 2%0.2µs
toffTurn-off time0.4µs
3
JUNE 1973 - REVISED MARCH 1997
BD250, BD250A, BD250B, BD250C
PNP SILICON POWER TRANSISTORS
PRODUCT INFORMATION
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·1 -1·0 -10 -100
hFE - DC Current Gain
1
10
100
1000 TCS636AD
VCE = -4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
IB - Base Current - A
-0·001 -0·01 -0·1 -1·0 -10 -100
VCE(sat) - Collector-Emitter Saturation Voltage - V
-0·01
-0·1
-1·0
-10 TCS636AB
IC = -25 A
IC = -20 A
IC = -15 A
IC = -10 A
IC = -300 mA
IC = -1 A
IC = -3 A
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·1 -1·0 -10 -100
VBE - Base-Emitter Voltage - V
-0·6
-0·8
-1·0
-1·2
-1·4
-1·6
-1·8 TCS636AC
VCE = -4 V
TC = 25°C
BD250, BD250A, BD250B, BD250C
PNP SILICON POWER TRANSISTORS
4
JUNE 1973 - REVISED MARCH 1997
PRODUCT INFORMATION
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
-1·0 -10 -100 -1000
IC - Collector Current - A
-0·01
-0·1
-1·0
-10
-100 SAS636AB
BD250
BD250A
BD250B
BD250C
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TC - Case Temperature - °C
025 50 75 100 125 150
Ptot - Maximum Power Dissipation - W
0
20
40
60
80
100
120
140 TIS635AA
5
JUNE 1973 - REVISED MARCH 1997
BD250, BD250A, BD250B, BD250C
PNP SILICON POWER TRANSISTORS
PRODUCT INFORMATION
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
SOT-93
ALL LINEAR DIMENSIONS IN MILLIMETERS
4,90
4,70
1,37
1,17
0,78
0,50
2,50 TYP.
15,2
14,7
12,2 MAX. 16,2 MAX.
18,0 TYP.
31,0 TYP.
1,30
1,10
11,1
10,8
4,1
4,0 3,95
4,15
1 2 3
NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW
ø
BD250, BD250A, BD250B, BD250C
PNP SILICON POWER TRANSISTORS
6
JUNE 1973 - REVISED MARCH 1997
PRODUCT INFORMATION
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
