1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol 5088LT1 5089LT1 Unit
Collector–Emitter Voltage VCEO 30 25 Vdc
Collector–Base Voltage VCBO 35 30 Vdc
Emitter–Base Voltage VEBO 4.5 Vdc
Collector Current — Continuous IC50 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient R
q
JA 556 °C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient R
q
JA 417 °C/W
Junction and Storage Temperature TJ, Tstg –55 to +150 °C
DEVICE MARKING
MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0) MMBT5088
MMBT5089
V(BR)CEO 30
25 —
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0) MMBT5088
MMBT5089
V(BR)CBO 35
30 —
—
Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0) MMBT5088
(VCB = 15 Vdc, IE = 0) MMBT5089
ICBO —
—50
50
nAdc
Emitter Cutoff Current
(VEB(off) = 3.0 Vdc, IC = 0) MMBT5088
(VEB(off) = 4.5 Vdc, IC = 0) MMBT5089
IEBO —
—50
100
nAdc
1. FR–5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBT5088LT1/D
SEMICONDUCTOR TECHNICAL DATA
12
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
*Motorola Preferred Device
Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 µAdc, VCE = 5.0 Vdc) MMBT5088
MMBT5089
(IC = 1.0 mAdc, VCE = 5.0 Vdc) MMBT5088
MMBT5089
(IC = 10 mAdc, VCE = 5.0 Vdc) MMBT5088
MMBT5089
hFE 300
400
350
450
300
400
900
1200
—
—
—
—
—
Collector–Emitter Saturation V oltage
(IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) — 0.5 Vdc
Base–Emitter Saturation V oltage
(IC = 10 mAdc, IB = 1.0 mAdc) VBE(sat) —0.8 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz) fT50 — MHz
Collector–Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz emitter guarded) Ccb —4.0 pF
Emitter–Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz collector guarded) Ceb —10 pF
Small Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) MMBT5088
MMBT5089
hfe 350
450 1400
1800
—
Noise Figure
(IC = 100
m
Adc, VCE = 5.0 Vdc, RS = 10 kΩ, f = 1.0 kHz) MMBT5088
MMBT5089
NF —
—3.0
2.0
dB
RSin
enIDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 2. Effects of Frequency
f, FREQUENCY (Hz)
7.0
10
20
30
5.0
Figure 3. Effects of Collector Current
IC, COLLECTOR CURRENT (mA)
Figure 4. Noise Current
f, FREQUENCY (Hz)
Figure 5. Wideband Noise Figure
RS, SOURCE RESISTANCE (OHMS)
3.010
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
NOISE VOLTAGE
en, NOISE VOLTAGE (nV)
en, NOISE VOLTAGE (nV)
In, NOISE CURRENT (pA)
NF, NOISE FIGURE (dB)
20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
IC = 10 mA
300
µ
A
30
µ
A
RS
≈
0
3.0 mA
1.0 mA 7.0
10
20
30
5.0
3.0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
RS
≈
0
f = 10 Hz 100 Hz
1.0 kHz
10 kHz
100 kHz
IC = 10 mA
3.0 mA
1.0 mA
300
µ
A
100
µ
A
10
µ
A
RS
≈
0
10
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
0.1
0.2
0.3
1.0
0.7
2.0
3.0
5.0
7.0
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
0
4.0
8.0
12
16
20
BANDWIDTH = 10 Hz to 15.7 kHz
IC = 1.0 mA
500
µ
A
100
µ
A
10
µ
A
100 Hz NOISE DATA
300
200
100
3.0
5.0
7.0
10
20
30
50
70
RS, SOURCE RESISTANCE (OHMS)
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
VT, TOTAL NOISE VOLTAGE (nV)
NF, NOISE FIGURE (dB)
0
4.0
8.0
12
16
20
Figure 6. Total Noise Voltage
BANDWIDTH = 1.0 Hz IC = 10 mA
3.0 mA
1.0 mA
300
µ
A
100
µ
A
30
µ
A
10
µ
A
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
IC = 10 mA
300
µ
A
100
µ
A
30
µ
A
3.0 mA
1.0 mA
10
µ
A
BANDWIDTH = 1.0 Hz
RS, SOURCE RESISTANCE (OHMS)
Figure 7. Noise Figure
0.5
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.4
1.0
2.0
3.0
4.0
0.3
0.01
h , DC CURRENT GAIN (NORMALIZED)
0.05 2.0 3.0 100.02 0.03
0.2 1.00.1 5.0
FE
VCE = 5.0 V
TA = 125
°
C
25
°
C
–55
°
C
0.7
0.5
0.50.2 0.3
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
Figure 9. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 10. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
0.01
0
–0.8
–1.2
–1.6
–2.4
TJ = 25
°
C
VCE(sat) @ IC/IB = 10
VBE @ VCE = 5.0 V
TJ = 25
°
C to 125
°
C
–55
°
C to 25
°
C
RVBE, BASE–EMITTER
θ
TEMPERATURE COEFFICIENT (mV/ C)
°
–0.4
–2.0
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
fT, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
C, CAPACITANCE (pF)
8.0
0.8
1.0
2.0
3.0
4.0
6.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
TJ = 25
°
C
Ccb
Cob Ceb Cib
1.0 2.0 5.03.0 7.0 10 20 30 50 70 100
500
300
200
70
50
100
VCE = 5.0 V
TJ = 25
°
C
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOL TS)
Figure 12. Current–Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT–23
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, RθJA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOT–23 package,
PD can be calculated as follows:
PD = TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T A of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD = 150°C – 25°C
556°C/W = 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
•Always preheat the device.
•The delta temperature between the preheat and
soldering should be 100°C or less.*
•When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
•The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
•When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
•After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
•Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
DJ
K
L
A
C
BS
H
GV
3
12
CASE 318–08
SOT–23 (TO–236AB)
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
DIM
AMIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0350 0.0440 0.89 1.11
D0.0150 0.0200 0.37 0.50
G0.0701 0.0807 1.78 2.04
H0.0005 0.0040 0.013 0.100
J0.0034 0.0070 0.085 0.177
K0.0180 0.0236 0.45 0.60
L0.0350 0.0401 0.89 1.02
S0.0830 0.0984 2.10 2.50
V0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
ISSUE AE
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:
USA/EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX: RMF AX0@email.sps.mot.com – T OUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design–NET.com 5 1 Ti ng Ko k Road, Tai Po, N.T., Hong Kong. 852–26629298
MMBT5088LT1/D
◊
