365
Trench Gate Design
Single IGBTMOD™
450 Amperes / 250 Volts
CM450HA-5F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 3.82 97.0
B 3.15 80.0
C 0.69 17.5
D 1.14 29.0
E 1.04 26.5
F 1.89 48.0
G 0.63 16.0
H 0.24 6.0
J 0.26 6.7
Dimensions Inches Millimeters
K 1.14 29.0
L 1.42 36.0
M 0.28 7.0
N 0.26 6.5
P M4 Metric M4
Q M6 Metric M6
R 0.51 13.0
S 0.35 9.0
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration, with a reverse
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
bly and thermal management.
Features:
□Low Drive Power
□Low VCE(sat)
□Discrete Super-Fast Recovery
Free-Wheel Diodes
□High Frequency Operation
(20-25 kHz)
□Isolated Baseplate for Easy
Heat Sinking
Applications:
□DC Chopper
□UPS
□Forklift
Ordering Information:
Example: Select the complete
nine digit module part number you
desire from the table below - i.e.
CM450HA-5F is a 250V (VCES),
450 Ampere Single IGBTMOD™
Power Module.
Current Rating VCES
Type Amperes Volts (x 50)
CM 450 5
LABEL
A
B
D
E
F
G
H
J
KL
M
(2 TYP.)
E
G
E
C
N - DIA.
(2 TYP.)
Q - THD.
C
G
E
E
R
R
S
P - THD.
(2 TYP.)
C
366
CM450HA-5F
Trench Gate Design Single IGBTMOD™
450 Amperes/250 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics Symbol CM450HA-5F Units
Junction Temperature Tj-40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E Short) VCES 250 Volts
Gate-Emitter Voltage (C-E Short) VGES ±20 Volts
Collector Current IC450 Amperes
Peak Collector Current ICM 900* Amperes
Diode Forward Current IFM 450 Amperes
Diode Forward Surge Current IFM 900* Amperes
Power Dissipation Pd735 Watts
Maximum Mounting Torque, M6 Terminal Screws — 26 in-lb
Maximum Mounting Torque, M6 Mounting Screws — 26 in-lb
Maximum Mounting Torque, M4 (G, E) Terminal Screws — 13 in-lb
Module Weight (Typical) — 270 Grams
V Isolation Voltage VRMS 2500 Volts
Static Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 45mA, VCE = 10V 3.0 4.0 5.0 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 450A, VGE = 10V, — 1.2 1.7 Volts
IC = 450A, VGE = 10V, Tj = 150°C — 1.1 — Volts
Total Gate Charge QGVCC = 50V, IC = 450A, VGS = 15V — 1760 — nC
Diode Forward Voltage VFM IE = 450A, VGS = 0V — — 2.0 Volts
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance CIES — — 132 nF
Output Capacitance COES VGE = 0V, VCE = 10V — — 6 nF
Reverse Transfer Capacitance CRES — — 4.5 nF
Resistive Turn-on Delay Time td(on) — — 1200 ns
Load Rise Time trVCC = 50V, IC = 450A, — — 2700 ns
Switching Turn-off Delay Time td(off) VGE1 = VGE2 = 10V, RG = 5.6Ω, — — 900 ns
Times Fall Time tFResistive Load — — 500 ns
Diode Reverse Recovery Time trr IE = 450A, diE/dt = -900A/ms — — 300 ns
Diode Reverse Recovery Charge Qrr IE = 450A, diE/dt = -900A/ms — 7.6 — µC
Thermal and Mechanical Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c) Per IGBT — — 0.17 °C/W
Thermal Resistance, Junction to Case Rth(j-c) Per Free Wheel Diode — — 0.23 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied — — 0.090 °C/W
367
CM450HA-5F
Trench Gate Design Single IGBTMOD™
450 Amperes/250 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
012345
400
0
V
GE
= 15V
10
8
5.5
5.25
5.0
T
j
= 25oC
200
600
1000
800
6
5.75
4.5 4.75
400
0
200
600
1000
800
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
0246810
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
0 400 600 1000800200
2.0
1.5
1.0
0.5
0
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0 5 10 15
4
3
2
1
0
T
j
= 25°C
I
C
= 180A
I
C
= 900A
I
C
= 450A
0.6 0.8 1.0 1.2 1.4 1.6 1.8
101
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
102
103
104
EMITTER CURRENT, IE, (AMPERES)
T
j
= 25°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10-1 100102
100
101
102
103
V
GE
= 0V
f = 1MHz
101
C
ies
C
oes
C
res
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
102103
101
102
104
t
d(off)
t
d(on)
t
r
V
CC
= 100V
V
GE
= ±10V
R
G
= 5.6Ω
T
j
= 125°C
t
f
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY TIME, trr, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
101102103
102
101
t
rr
I
rr
103
102
101
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
di/dt = -900A/µsec
T
j
= 25°C
GATE CHARGE, QG, (µC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE, V
GE
0123
20
15
10
5
0
45
V
CC
= 100V
V
CC
= 50V
IC = 450A
368
CM450HA-5F
Trench Gate Design Single IGBTMOD™
450 Amperes/250 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
1
10
-1
10
-2
10
0
10
1
10
-3
10
0
10
-1
10
-2
10
-3
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.17°C/W
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
1
10
-1
10
0
10
1
10
-3
10
-2
10
0
10
-1
10
-2
10
-3
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.23°C/W
