NTD3055-150 Power MOSFET 9.0 Amps, 60 Volts N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 9.0 AMPERES 60 VOLTS RDS(on) = 122 m (Typ) Typical Applications Power Supplies Converters Power Motor Controls Bridge Circuits N-Channel D MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Symbol Value Unit Drain-to-Source Voltage VDSS 60 Vdc Drain-to-Gate Voltage (RGS = 10 M) VDGR 60 Vdc Gate-to-Source Voltage - Continuous - Non-repetitive (tp10 ms) VGS VGS 20 30 Drain Current - Continuous @ TA = 25C - Continuous @ TA = 100C - Single Pulse (tp10 s) ID ID 9.0 3.0 27 Apk PD 28.8 0.19 2.1 1.5 W W/C W W TJ, Tstg - 55 to 175 C Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TA = 25C (Note 1) Total Power Dissipation @ TA = 25C (Note 2) Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 25 Vdc, VGS = 10 Vdc, L = 1.0 mH, IL(pk) = 7.75 A, VDS = 60 Vdc) Thermal Resistance - Junction-to-Case - Junction-to-Ambient (Note 1) - Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds G Vdc S Adc IDM EAS 30 4 MARKING DIAGRAMS 4 Drain 1 2 3 YWW 3150 Rating DPAK CASE 369C (Surface Mount) Style 2 2 1 3 Drain Gate Source 4 mJ 4 Drain C/W RJC RJA RJA 5.2 71.4 100 TL 260 C 1. When surface mounted to an FR4 board using 0.5 sq. in pad size. 2. When surface mounted to an FR4 board using minimum recommended pad size. 1 YWW 3150 * * * * 2 3 DPAK CASE 369D (Straight Lead) Style 2 3150 Y WW 1 2 3 Gate Drain Source Device Code = Year = Work Week ORDERING INFORMATION Device Package Shipping DPAK 75 Units/Rail NTD3055-150-1 DPAK Straight Lead 75 Units/Rail NTD3055-150T4 DPAK 2500/Tape & Reel NTD3055-150 Semiconductor Components Industries, LLC, 2003 April, 2003 - Rev. 1 1 Publication Order Number: NTD3055-150/D NTD3055-150 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 60 - 70.2 - - - 1.0 10 - - 100 2.0 - 3.0 6.4 4.0 - - 122 150 - 1.4 1.1 1.9 - gFS - 5.4 - mhos Ciss - 200 280 pF Coss - 70 100 Crss - 26 40 td(on) - 11.2 25 OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 Adc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150C) IDSS Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/C Adc nAdc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 Adc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain-to-Source On-Resistance (Note 3) (VGS = 10 Vdc, ID = 4.5 Adc) RDS(on) Static Drain-to-Source On-Voltage (Note 3) (VGS = 10 Vdc, ID = 9.0 Adc) (VGS = 10 Vdc, ID = 4.5 Adc, TJ = 150C) VDS(on) Forward Transconductance (Note 3) (VDS = 7.0 Vdc, ID = 6.0 Adc) Vdc mV/C m Vdc DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time (VDD = 48 Vdc, ID = 9.0 Adc, VGS = 10 Vdc, Vdc RG = 9.1 )) ((Note 3)) Rise Time Turn-Of f Delay Time Fall Time Gate Charge (VDS = 48 Vdc, ID = 9.0 Adc, VGS = 10 Vdc) (Note 3) ns tr - 37.1 80 td(off) - 12.2 25 tf - 23 50 QT - 7.1 15 Q1 - 1.7 - Q2 - 3.5 - VSD - 0.98 0.86 1.20 - Vdc trr - 28.9 - ns ta - 21.6 - tb - 7.3 - QRR - 0.036 - nC SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 9.0 Adc, VGS = 0 Vdc) (Note 3) (IS = 19 Adc, VGS = 0 Vdc, TJ = 150C) Reverse Recovery Time (IS = 9.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/s) (Note 3) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 C NTD3055-150 20 VGS = 10 V 16 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 20 VGS = 9 V VGS = 7 V VGS = 8 V 12 8 VGS = 6 V 4 VGS = 5 V 1 2 3 4 5 6 7 12 8 TJ = 25C 4 TJ = 100C 8 TJ = -55C 3 6 7 8 VGS, GATE-T O-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.5 VGS = 10 V 0.4 TJ = 100C 0.3 0.2 TJ = 25C TJ = -55C 0.1 0 0 4 8 12 16 24 20 9 0.5 VGS = 15 V 0.4 0.3 TJ = 100C 0.2 TJ = 25C 0.1 TJ = -55C 0 0 4 8 12 16 20 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Gate-T o-Source Voltage Figure 4. On-Resistance versus Drain Current and Gate Voltage 24 1000 2.2 2 5 4 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) RDS(on), DRAIN-TO-SOURCE RESISTANCE () 0 VGS = 0 V ID = 4.5 A VGS = 10 V TJ = 150C 1.8 IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE () 16 0 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) VDS 10 V 1.6 1.4 1.2 1 100 TJ = 125C 10 TJ = 100C 0.8 0.6 -50 1 -25 0 25 50 75 100 125 150 175 0 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-To-Source Leakage Current versus Voltage http://onsemi.com 3 60 560 VDS = 0 V C, CAPACITANCE (pF) 480 VGS = 0 V VGS, GATE-T O-SOURCE VOLTAGE (V) NTD3055-150 TJ = 25C Ciss 400 320 Crss 240 Ciss 160 Coss 80 Crss 0 5 VGS 0 VDS 5 10 15 10 20 QT 10 8 VGS Q2 Q1 6 4 ID = 9 A TJ = 25C 2 0 0 25 1 2 3 4 6 5 7 8 GATE-T O-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 100 10 IS, SOURCE CURRENT (AMPS) VDS = 30 V ID = 9 A VGS = 10 V t, TIME (ns) tr tf td(off) td(on) VGS = 0 V TJ = 25C 8 6 4 2 0 10 1 10 100 0.6 0.68 0.76 0.84 0.92 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current VGS = 20 V SINGLE PULSE TC = 25C 10 10 s 100 s 1 ms 10 ms 1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1 dc 10 100 EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) RG, GATE RESISTANCE () 100 ID, DRAIN CURRENT (AMPS) 12 1 32 ID = 7.75 A 24 16 8 0 25 50 75 100 125 150 175 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 NTD3055-150 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 D = 0.5 0.2 1 0.1 P(pk) 0.05 t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.1 0.00001 0.0001 0.001 0.01 t, TIME (s) Figure 13. Thermal Response http://onsemi.com 5 0.1 1 10 NTD3055-150 INFORMATION FOR USING THE DPAK SURFACE MOUNT PACKAGE RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection 6.20 0.244 interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 2.58 0.101 5.80 0.228 3.0 0.118 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches POWER DISSIPATION FOR A SURFACE MOUNT DEVICE PD = 175C - 25C = 2.1 Watts 71.4C/W The power dissipation for a surface mount device is a function of the drain pad size. These can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows: PD = The 71.4C/W for the DPAK package assumes the use of 0.5 sq. in. source pad on a glass epoxy printed circuit board to achieve a power dissipation of 2.1 W. There are other alternatives to achieving higher power dissipation from the surface mount packages. One is to increase the area of the drain pad. By increasing the area of the drain pad, the power dissipation can be increased. Although one can almost double the power dissipation with this method, one will be giving up area on the printed circuit board which can defeat the purpose of using surface mount technology. For example, a graph of RJA versus drain pad area is shown in Figure 14. TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device. For a DPAK device, PD is calculated as follows. RJA , THERMAL RESISTANCE, JUNCTION TO AMBIENT (C/W) 100 Board Material = 0.0625 G-10/FR-4, 2 oz Copper 2.1 Watts 80 TA = 25C 60 3.6 Watts 40 20 0 6.0 Watts 2 4 6 A, AREA (SQUARE INCHES) 8 10 Figure 14. Thermal Resistance versus Drain Pad Area for the DPAK Package (Typical) http://onsemi.com 6 NTD3055-150 PACKAGE DIMENSIONS DPAK CASE 369C-01 ISSUE O SEATING PLANE -TC B V E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D 2 PL G 0.13 (0.005) M T INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --0.89 1.27 3.93 --- STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN DPAK CASE 369D-01 ISSUE O C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 -TSEATING PLANE K J F H D G 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T http://onsemi.com 7 MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- NTD3055-150 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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