44 4 KF /Diodes RB715F YUALIESEY pIBY ay hE-NUP STAB Silicon Epitaxial Schottky Barrier Diode eh @ 5432+ ;4E/ Dimensions (Unit : mm) 1) AY-FIEL YT ats, 2) ST E-WE, _ 0.9+0.1 2.0+0.2 3) BRE CHS. 1.30.1 06, [03 @ Features ( ne oft | | : 7 - we A) 1) Cathode-common twin type O~ Oy [ | Ss S PLP 2) Minimotd 2 |t ye 3) High reliability | = |% <4 ott oil] OK me 0.15+0 0.3+0.1 @ Ae fA IE FA BmAtyF- 7A @ Applications For general detection and high-speed switching @ 3x4 BATH / Absolute Maximum Ratings (Ta = 25C) Parameter Symbol Limits Unit By RLE-7 Wee Vem 25 Vv BrReee Va 20 v F038 at Sit lo 30 mA Liat e* IFSM 200 mA DHEA REA Tj 40 ~+ 125 (Ripa ES A Tstg 40~+ 125 *60HzZ +1 @ BAM Electrical Characteristics (Ta = 25C) Parameter Symbol | Min. Typ. Max. Unit Conditions CARS R IR _ 1 pA VrR = 10V _ BARWSE VF - _ 0.37 v le =1mA int SS Ct 2.0 pF Vr = 1V, f= 1MHz ROnM 1293 Ae NY i AOA Vo ma-HAWN