© 2008 IXYS CORPORATION, All rights reserved
Features
zInternational standard package
JEDEC TO-247AD
zHigh frequency IGBT with guaranteed
Short Circuit SOA Capability
z2nd generation HDMOSTM process
zLow VCE(SAT)
- for low on-state conduction losses
zMOS Gate turn-on
- drive simplicity
Applications
zAC motor speed control
zDC servo and robot drives
zDC choppers
zUninterruptible power supplies (UPS)
zSwitch-mode and resonant-mode
power supplies
zWelding
Advantages
zEasy to mount with 1 screw
(isolated mounting screw hole)
zSwitching speed for high frequency
applications
zHigh power density
DS92809I(07/08)
IXSH24N60
IXSH24N60A
VCES IC90 VCE(sat)
600V 24A 2.2V
600V 24A 2.7V
HiPerFASTTM IGBT
Short Circuit SOA Capability
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C, RGE = 1MΩ600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C 48 A
IC90 TC= 90°C24 A
ICM TC= 25°C, 1ms 96 A
SSOA VGE = 15V, TJ = 125°C, RG = 10Ω ICM = 48 A
(RBSOA) Clamped inductive load @0.8 • VCES V
tSC V
GE
= 15V, VCE = 360V, TJ = 125°C 10 μs
(SCSOA) RG = 82Ω, non repetitive
PCTC= 25°C 150 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque 1.13 / 10 Nm/lb.in.
TL Maximum lead temperature for soldering 300 °C
TSOLD 1.6mm (0.062 in.) from case for 10s 260 °C
Weight 6 g
G = Gate C = Collector
E = Emitter TAB = Collector
TO-247 (IXSH)
GCE
TAB
IXSH24N60
IXSH24N60A
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVCES IC= 250μA, VCE = VGE 600 V
VGE(th) IC= 1.5mA, VCE = VGE 4.0 7.0 V
ICES VCE = 0.8 • VCES 200 μA
sVGE = 0V TJ = 125°C 1 mA
IGES VCE = 0V, VGE = ±20V ±100 nA
VCE(sat) IC= 24A, VGE = 15V, Note 1 2.2 V
2.7 V
Advance Technical Information
IXYS reserves the right to change limits, test conditions, and dimensions.
IXSH24N60
IXSH24N60A
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs IC = 24A, VCE = 10V, Note 1 9 23 S
IC(ON) VGE = 15V, VCE = 10V 65 A
Cies 1800 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 160 pF
Cres 45 pF
Qg 75 90 nC
Qge IC = 24A, VGE = 15V, VCE = 0.5 • VCES 20 30 nC
Qgc 35 50 nC
td(on) 100 ns
tri 200 ns
td(off) 450 ns
tfi 500 ns
275 ns
Eoff 2.0 mJ
td(on) 100 ns
tri 200 ns
Eon 1.2 mJ
td(off) 475 ns
600 ns
tfi 450 ns
Eoff 4.0 mJ
3.0 mJ
RthJC 0.83 °C/W
RthCK 0.21 °C/W
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-247 (IXSH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Inductive load, TJ = 125°°
°°
°C
IC = 24A, VGE = 15V
VCE = 480V, RG = 10Ω
IXSH24N60
IXSH24N60A
IXSH24N60A
IXSH24N60
IXSH24N60A
IXSH24N60
IXSH24N60A
Inductive load, TJ = 25°°
°°
°C
IC = 24A, VGE = 15V
VCE = 480V, RG = 10Ω
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
