IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear Switch 175MHz Mode RFRF MOSFET MOSFET Lo Capacitance Low CapacitanceZ-MOS Z-MOS MOSFET MOSFETProcess Process TMTM Optimized for RF Linear Operation Operation Ideal for Class AB C, D, & C, & EBroadcast Applications & Communications Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C; RGS = 1 M 1200 V VGS Continuous 20 V VGSM Transient 30 V ID25 Tc = 25C 8 A IDM Tc = 25C, pulse width limited by TJM 40 A IAR Tc = 25C 8 A EAR Tc = 25C TBD mJ dv/dt IS IDM, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 VDSS = 1200 V ID25 = 8.0 A RDS(on) = 2.1 PDC = 880 W 5 V/ns >200 V/ns IS = 0 DRAIN PDC PDHS Tc = 25C, Derate 4.4W/C above 25C PDAMB Tc = 25C 880 W 440 W 3.0 W RthJC 0.17 C/W RthJHS 0.34 C/W GATE SG1 SG2 SD1 SD2 Features min. VDSS VGS = 0 V, ID = 4 ma VGS(th) VDS = VGS, ID = 250 IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = 0.8VDSS VGS=0 V 3.5 TJ = 25C TJ =125C VGS = 20 V, ID = 0.5ID25 Pulse test, t 300S, duty cycle d 2% gfs VDS = 50 V, ID = 0.5ID25, pulse test 6.5 V 100 nA 50 1 A mA 2.1 10.1 S -55 TJ +175 175 TJM -55 Tstg Weight max. 1200 RDS(on) TL typ. 1.6mm(0.063 in) from case for 10 s C C + 175 C 300 C 3.5 g * Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power * * - - * * * cycling capability IXYS advanced Z-MOS process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Advantages * Optimized for RF and high speed * Easy to mount--no insulators needed * High power density IXZ308N120 Z-MOS RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) min. typ. 1 RG Ciss Coss VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz Crss Cstray Back Metal to any Pin Td(on) Ton Td(off) VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 1 (External) Toff Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF=Is, VGS=0 V, Pulse test, t 300s, duty cycle 2% Trr max. 1960 pF 59 pF 9.2 pF 33 pF 4 ns 5 ns 4 ns 6 ns Characteristic Values (TJ = 25C unless otherwise specified) min. typ. TBD max. 8 48 A 1.5 V ns IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585 6,731,002 IXZ308N120 Z-MOS RF Power MOSFET 10000 Ciss Capacitance in pF 1000 Coss 100 Crss 10 1 0 200 400 600 800 1000 1200 Vds in Volts IXZ308N120 Capacitances verses Vds Doc #dsIXZ308N12 REV 06/04 (c) 2004 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: info@ixysrf.com Web: http://www.ixysrf.com