APPLICATIONS ) SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS) Unit in mm 5.IMAX. x w Low Frequency Amplifiers | 3 = Low Noise Amplifiers nas q - + . 0.55 fly | ZTE if|| al Zz 0.45 o1 3/5 FEATURES | ai] i l s 23 e Excellent hrs Linearity, hee (0. lmA) /hre (2mA) =0.95(Typ.) Loy 127 @ High hy: (70~700). 3 7 . 4 on ob do s @ Excellent Safe Operation Area. 2 @ Low Noise 25C3198 NF=1dB(TYP), 10dB (Max). < S$C3198Q NF=0.2dB (TYP), 3dB(Max). L. EMITTER @ Complementary to the 2SA1266/2SA 1266. 2 CO ECTOR JEDEC TO 92 HB MAXIMUM RATINGS (T2=250) CHARACTERISTIC SYMBOL] RATING |UNIT CHARACTERISTIC SYMBOL RATING. JUNI? j Collector Base Voltage Vcpo 60 Vv Emitter Current lk 150 |mA | Collector Emitter Voltage Vero 50 V Collector Power Dissipation] Pe 400 | mW | Emitter Base Voltage Vepo 5 V Junction Temperature Tj 125 | Collector Current Ie 150 mA Storage Temperature Range] Tstg | 55-~ 125) : He ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MINJ TYP.)MAX.| UNIT | Collector Cut off Current leno Ves=60V, Ip0 P - | Jo. | wa Emitter Cut. off Current leno Ven =bV, [-=0 - - 10.1 BA |: DC Current Gain(1) hepa Vee=6V, I-=2mA 70 700 - DC Current Gain (2) hegte: Vee=6V, [e=150mA 25 - - 7 Collector -Emitter Saturation Voltage | Veersat Ic= 100mA, [n= 10mA - 0.1 | 0.25 Vv. Base~Emitter Saturation Voltage Voeelsat! Ie=100mA, Ie=100mA - _ 0.1 Vo. Transition Frequency fr Ver=10V, Ip=1mA &0 > . | MHz |: Output Capacitance Cos Vee=10V, =O, f=1MHz | | 2.0) 3.0] pF] Base Spreading Resistance T op to sOMTLS k= 1mA, - 50 Q 25C3198 Vee=6V, I1-=0.1mA ~ 1 10 Noise Figure NF ee dB 25C3198Q Re=l0kQ, f=1 KHz - 0.2 3 = NOTE: According to hgg (1), Classified as follows OQ Y 70 140 120~ 240 GR 200~ 400 BL 390~ 700 KEC 326