10
S1C60N09
• 3 V LCD panel, 1/4, 1/3, 1/2 duty, 1/2 bias
(V
L1
is shorted to V
SS
inside the IC and V
L1
is shorted to V
L2
outside the IC)
<Normal mode>
Characteristic
LCD drive voltage
Current consumption
(Unless otherwise specified: V
DD
=0V, V
SS
=-1.5V, f
OSC
=65kHz, Ta=25°C, V
S1
/V
L1
–V
L3
are internal voltage, C
1
–C
3
=0.1µF, R
CR
=475kΩ)
Symbol
V
L1
V
L2
V
L3
I
OP
Unit
V
V
V
µA
µA
Max.
2·V
L1
×0.9
15.0
20.0
Typ.
V
SS
V
SS
8.0
15.0
Min.
2·V
L1
- 0.1
Condition
Connect 1 MΩ load resistor between V
DD
and V
L1
(without panel load)
Connect 1 MΩ load resistor between V
DD
and V
L2
(without panel load)
Connect 1 MΩ load resistor between V
DD
and V
L3
(without panel load)
During HALT Without
During execution panel load
<Heavy load protection mode>
Characteristic
LCD drive voltage
Current consumption
(Unless otherwise specified: V
DD
=0V, V
SS
=-1.5V, f
OSC
=65kHz, Ta=25°C, V
S1
/V
L1
–V
L3
are internal voltage, C
1
–C
3
=0.1µF, R
CR
=475kΩ)
Symbol
V
L1
V
L2
V
L3
I
OP
Unit
V
V
V
µA
µA
Max.
2·V
L1
×0.85
30.0
40.0
Typ.
V
SS
V
SS
16.0
30.0
Min.
2·V
L1
- 0.1
Condition
Connect 1 MΩ load resistor between V
DD
and V
L1
(without panel load)
Connect 1 MΩ load resistor between V
DD
and V
L2
(without panel load)
Connect 1 MΩ load resistor between V
DD
and V
L3
(without panel load)
During HALT Without
During execution panel load
●Oscillation Characteristics
Oscillation characteristics will vary according to different conditions (elements used, boad pattern). Use the following char-
acteristics are as reference values.
S1C60N09 Crystal Oscillation
Characteristic
Oscillation start voltage
Oscillation stop voltage
Built-in capacitance (drain)
Frequency/voltage deviation
Frequency/IC deviation
Frequency adjustment range
Harmonic oscillation start voltage
Permitted leak resistance
Symbol
Vsta
Vstp
C
D
∂f/∂V
∂f/∂IC
∂f/∂C
G
V
hho
R
leak
Unit
V
V
pF
ppm
ppm
ppm
V
MΩ
Max.
5
10
-3.6
Typ.
20
45
Min.
-2.6
-2.6
-10
35
200
Condition
t
sta≤5sec (V
SS
)
t
stp≤10sec (V
SS
)
Including the parasitic capacitance inside the chip
V
SS
=-2.6 to -3.6V
C
G
=5 to 25pF
(V
SS
)
Between OSC1 and V
DD
, V
SS
(Unless otherwise specified: V
DD
=0V, V
SS
=-3.0V, f
OSC
=32.768kHz, Crystal: Q13MC146, C
G
=25pF, C
D
=built-in, Ta=25°C)
S1C60L09 Crystal Oscillation
Characteristic
Oscillation start voltage
Oscillation stop voltage
Built-in capacitance (drain)
Frequency/voltage deviation
Frequency/IC deviation
Frequency adjustment range
Harmonic oscillation start voltage
Permitted leak resistance
Symbol
Vsta
Vstp
C
D
∂f/∂V
∂f/∂IC
∂f/∂C
G
V
hho
R
leak
Unit
V
V
pF
ppm
ppm
ppm
V
MΩ
Max.
5
10
-1.8
Typ.
20
45
Min.
-1.2
-1.2
-10
35
200
Condition
t
sta≤5sec (V
SS
)
t
stp≤10sec (V
SS
)
Including the parasitic capacitance inside the chip
V
SS
=-1.2 to -1.8V
C
G
=5 to 25pF
(V
SS
)
Between OSC1 and V
DD
, V
SS
(Unless otherwise specified: V
DD
=0V, V
SS
=-1.5V, f
OSC
=32.768kHz, Crystal: Q13MC146, C
G
=25pF, C
D
=built-in, Ta=25°C)
S1C60N09 CR Oscillation
Characteristic
Oscillation frequency dispersion
Oscillation start time
Symbol
fOSC
tsta
Unit
kHz
mS
Max.
84.5
3
Typ.
65
Min.
45.5
Condition
VSS=-2.6 to -3.6V
(Unless otherwise specified: VDD=0V, VSS=-3.0V, RCR=475kΩ, Ta=25°C)
S1C60L09 CR Oscillation
Characteristic
Oscillation frequency dispersion
Oscillation start time
Symbol
fOSC
tsta
Unit
kHz
mS
Max.
84.5
3
Typ.
65
Min.
45.5
Condition
VSS=-1.2 to -1.8V
(Unless otherwise specified: VDD=0V, VSS=-1.5V, RCR=475kΩ, Ta=25°C)