1/10July 2004
SD2931
RF POWER TRANSISTORS
HF/VHF/U HF N-CHANNEL MOSFETs
REV. 4
•GOLD METALLIZATION
•EXCELLENT THERMAL STABILITY
•COMMON SOURCE CONFIGURATION
•POUT = 150 W MIN. WITH 14 dB GAIN @
175 MHz
DESCRIPTION
The SD2931 is a gold metallized N-Channel MOS
field-effect RF power transistor. It is intended for
use in 50 V dc la rge sig nal ap plica tions up to 2 30
MHz.
PIN CONNECTION
1
3
4
2
1. Drain
2. Source 3. Gate
4. Source
M174
epoxy sealed
ORDER CODE S
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
THERMAL DATA
Order Codes Marking Package Packaging
SD2931 SD2931 M174 Plastic Tray
Symbol Parameter Value Unit
V(BR)DSS Drain Source Voltage 125 V
VDGR Drain-Gate Voltage (RGS = 1MΩ)125 V
VGS Gate-So ur ce Volatge ±20 V
IDDrain Current 20 A
PDISS Power Dissipation 292 W
TjMax. Oper atin g Jun ct ion Temper atu re 200 °C
TSTG Storage Temperature -65 to +150 °C
Rth(j-c) Junction -Case Thermal Resistance 0.6 °C/W
Obsolete Product(s) - Obsolete Product(s)
SD2931
2/10
ELECTRICAL SPECIFICATION (TCASE = 25°C)
STATIC
* VGS(Q) sorte d wi th alpha/numeric code marked on unit.
DYNAMIC
IMPEDANCE DATA VGS SORTS
Symbol Test Conditions Min. Typ. Max. Unit
V(BR)DSS VGS = 0 V IDS = 100 mA 125 V
IDSS VGS = 0 V VDS = 50 V 50 µA
IGSS VGS = 20 V VDS = 0 V 250 nA
VGS(Q)* VDS = 10 V ID = 250 mA 1.5 4.0 V
VDS(ON) VGS = 10 V ID = 10 A 3.0 V
GFS VDS = 10 V ID = 5 A 5mho
CISS VGS = 0 V VDS = 50 V f = 1 MHz 480 pF
COSS VGS = 0 V VDS = 50 V f = 1 MHz 190 pF
CRSS VGS = 0 V VDS = 50 V f = 1 MHz 18 pF
Symbol Test Conditions Min. Typ. Max. Unit
POUT VDD = 50 V IDQ = 250 mA f = 175 MHz 150 W
GPS VDD = 50 V IDQ = 250 mA POUT = 150 W f = 175 MHz 14 15 dB
ηDVDD = 50 V IDQ = 250 mA POUT = 150 W f = 175 MHz 55 65 %
Load
Mismatch VDD = 50 V IDQ = 250 mA P OUT = 150 W f = 175 MHz
All Phase Ang les 10:1 VSWR
Typical Drain
Load Impedance
Typical Input
Impedance
GZin
ZDL
D
S
FREQ ZIN (Ω)Z
DL (Ω)
30 MHz 1.7 - j 5.7 6.8 + j 0.9
175 MHz 1.2 - j 2.0 2.0 + j 2.4
AA 1.5 - 1.6 J 2.8 - 2.9
BB 1.6 - 1.7 K 2.9 - 3.0
CC 1.7 - 1.8 L 3.0 - 3 .1
DD 1.8 - 1.9 M 3.1 - 3.2
EE 1.9 - 2.0 N 3.2 - 3.3
A 2.0 - 2.1 P 3.3 - 3.4
B 2.1 - 2.2 Q 3.4 - 3.5
C 2.2 - 2.3 R 3.5 - 3.6
D 2.3 - 2.4 S 3.6 - 3.7
E 2.4 - 2.5 T 3.7 - 3.8
F 2.5 - 2.6 U 3.8 - 3.9
G 2.6 - 2.7 V 3.9 - 4.0
H 2.7 - 2.8
Obsolete Product(s) - Obsolete Product(s)
3/10
SD2931
-25 0 25 50 75 100
Tc, CASE T EMPERATURE (°C)
0.8
0.84
0.88
0.92
0.96
1
1.04
1.08
1.12
VGS, GATE- S OURCE V OLT A GE (NORM ALIZED)
Id =.25A
Id =.1A
Id =1A
Id =2A
Id =4A
Id =11A Id =5A
Id =7A
Id =9A
Id =10A
Vds= 10 V 25 35 45 55 65 75 85
Tc, CASE TEMPERATURE (°C)
0.58
0.6
0.62
0.64
0.66
0.68
0.7
0.72
RTH(j-c) (°C/W)
1 10 100 1000
Vds (V)
1
10
100
Ids (A)
(1) Current in this area may be limited by Rds(on)
(1)
TYPICAL PERFORMANCE
Capacita nc e vs. Dra in -So urce Volta ge
0 1020304050
VDS, DRAIN-SOURCE VOLTAGE (V)
10
100
1000
10000
C, CAPACITANCE (pF)
Ciss
Coss
Crss
f =1MHz
Drain Curre nt vs. Gate Volta ge
22.533.544.555.56
VGS, G ATE-SOURCE VOLTAGE (V)
0
5
10
15
20
ID, DRAIN CURRENT (A)
Tc=-20 °C
Tc=+25 °C
Tc=+80 °C
VDS = 10 V
Gate-Source Voltage vs. Case Temperature Maximum Thermal Resistance vs. Case Temperature
Safe Opera tin g Are a
Obsolete Product(s) - Obsolete Product(s)
SD2931
4/10
TYPICAL PERFORMANCE (175 MHz)
Output Power vs. Input Power
0 5 10 15 20 25
Pin, INPUT POWER (W)
0
30
60
90
120
150
180
210
240
270
Pout, OUTPUT POWER (W)
f= 175MHz
Idq= 250mA
Vdd= 40V
Vdd= 50V
Output Power vs. Input Power
0 5 10 15 20 25
Pin, INPUT POWER(W)
0
30
60
90
120
150
180
210
240
270
Pout, OUTPUT POWER (W)
Vdd= 50V
Idq= 250mA
f= 175MHz
Tc =-20 °C
Tc =+25 °C
Tc =+80 °C
Power Gain vs. Output Power
0 50 100 150 200 250
Pout, OUTPUT POWER (W)
6
8
10
12
14
16
18
Gp, POWER GAIN (dB)
Vdd=50V
Idq=250mA
f=175Mhz
Drain Curre nt vs. Gate -S ou rce Volta ge
Efficiency vs. Output Power
Output Power vs. Supply Voltage
0 50 100 150 200 250
Pout, OUTPUT POWER (W)
20
30
40
50
60
70
80
Nd, EFFICIENCY (%)
Vdd=50V
Idq=250mA
f=175Mhz
24 28 32 36 40 44 48 52
Vdd,DRAI N VOLTAGE(V)
0
30
60
90
120
150
180
210
240
270
Pout,OUTPUT POWER(W)
Pin =2.5W
Pin =5W
Pin =10W
Idq= 250mA
f= 175MHz
22.533.544.555.56
VGS, GATE-SOURCE VOLTAGE (V)
0
5
10
15
20
ID, DRAIN CURRENT (A)
Tc=-20 °C
Tc=+25 °C
Tc=+80 °C
Obsolete Product(s) - Obsolete Product(s)
5/10
SD2931
175 MHz Test Circuit Schematic (Production Test Circuit)
Note: All dimensions in inches REF. 102157 9C
175 MHz Test Circuit Component Part List
T1 4:1 Transformer, 25 ohm Flexible Coax .090 OD 6” Long
T2 1:4 Transformer, 25 ohm Semi-Rigid Coax .141 OD 6” Long
FB1 Toroid X 2, 0.5” OD .312” ID 850µ 2 Turns
FB2, FB3 VK200
FB4 S hie ld Be ad , 1” OD 0.5” ID 850µ 3 Turns
L1 1/4 Wave Choke, 50 ohm Semi-Rig id Coax .141 OD 12” Long
PCB 0.62” Woven Fiberglass, 1 oz. Copper, 2 Sides, εr = 2.55
R1, R3 470 ohm 1 W Chip Resistor
R2 360 ohm 1/2 W Resistor
R4 20 Kohm 10 Turn Potentiometer
R5 560 ohm 1 W Resistor
C1, C11 470 pF ATC Chip Cap
C2 43 pF ATC Chip Cap
C3, C8, C9 Arco 404, 12-65 pF
C4 Arco 423, 16-100 pF
C5 120 pF ATC Chip Cap
C6 0.01 µF ATC Chip Cap
C7 30 pF ATC Chip Cap
C10 91 pF ATC Chip Cap
C12, C15 1200 pF ATC Chip Cap
C13, C14,C16, C17 0.01 µF / 500 V Chip Ca p
C18 10 µF 63 V Electrolytic Capacitor
Obsolete Product(s) - Obsolete Product(s)
SD2931
6/10
175 MHz Test Circuit Photomaster
6.4 inches
4 inches
175 MHz Test Circuit
Obsolete Product(s) - Obsolete Product(s)
7/10
SD2931
0 40 80 120 160 200
Pout, OUTPUT POWER (W)
0
10
20
30
40
50
60
70
Efficiency (%)
f = 30 MH z
VDD = 50 V
IDQ = 250 mA
24 28 32 36 40 44 48 52
VDD(V)
0
50
100
150
200
Pout(W)
f = 30 MHz
IDQ = 250 mA
Pin=.31 W
Pin=.22 W
Pin=.13 W
0123456
VGS GATE-SOURCE VO LTAGE (V)
0
50
100
150
200
Pout, OU TPUT POWER (W)
VDD = 50 V
IDQ = 250 mA
f = 30 MHz
Pin = Constant
T= -20 °C
T= +25 °C
T= +80 °C
TYPICAL PERFORMANCE (30 MHz)
Output Power vs. Input Power
0 0.1 0.2 0.3 0.4 0.5
Pin, INPUT POWER (W)
0
50
100
150
200
250
Pout, OUTPUT POWER (W)
Vdd = 50 V
Vdd = 40 V
f = 30 MHz
IDQ = 250 mA
Power Gain vs. Output Power
0 40 80 120 160 200
Pout, OUTPUT POWER (W)
24
25
26
27
28
29
30
PG, POWER GAIN (dB)
f = 30 MHz
VDD = 50 V
IDQ = 250 mA
Efficiency vs. Output Power Output Power vs. Supply Voltage
Output Power vs. Gate Voltage
Obsolete Product(s) - Obsolete Product(s)
SD2931
8/10
30 MHz Test Circuit Schematic (Engineering Test Circuit)
30 MHz Test Circuit Component Part List
T1 9:1 Transformer, 25 ohm Flexible Coax with extra shield .090 OD 15” Long
T2 1:4 Transformer, 50 ohm Flexible Coax .225 OD 15” Lo ng
FB1 Toroid 1.7” OD .30” ID 220µ 4Turns
FB2 Surface Mount EMI Shield Bead
FB3 Toroid 1.7” OD .300 ” ID 220µ 3Turns
RFC1 Toroid 0.5” OD 0.30” ID 125µ 4Turns 12 awg wire
PCB 0.62” Woven Fiberglass, 1 oz. Copper, 2 Sides, εr = 2.55
R1, R3 1 K ohm 1 W Chip Resistor
R2 680 ohm 3W Wirewound Resistor
C1,C4,C6,C7,C8,C9,
C11,C12,C13 0.1 µF AT C Ch ip Ca p
C2,C3 750 pF ATC Chip Cap
C5 470 pF ATC Chip Cap
C10 10 µF 63 V Electrolytic Capacitor
C14 100 µF 63 V Electrolytic Capacitor
Obsolete Product(s) - Obsolete Product(s)
9/10
SD2931
1011000DControlling Dimension in Inches
M174 (.500 DIA 4/L N/HERM W/FLG) MECHANICA L DATA
mm Inch
MIN. TYP. MAX MIN. TYP. MAX
A 5.56 5.584 0.219 0.230
B 3.18 0.125
C 6.22 6.48 0.245 0.255
D 18.28 18.54 0.720 0.730
E 3.18 0.125
F 24.64 24.89 0.970 0.980
G 12.57 12.83 0.495 0.505
H 0.08 0.18 0.003 0.007
I 2.11 3.00 0.083 0.118
J 3.81 4.45 0.150 0.175
K7.110.280
L 25.53 26.67 1.005 1.050
M 3.05 3.30 0.120 0.130
DIM.
Obsolete Product(s) - Obsolete Product(s)
SD2931
10/10
Information f urnished is believed to be accurate and reliable . However, STMicroelectronics assumes no responsibility for the consequences
of use of such inf ormation nor for any infri ngement of patents or othe r rights of th ird parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This p ublication supersedes and replaces all information pre vio usly supplied. STMicroelectr onics product s are not
authorized for use as critical components in life support dev ices or systems without express writt en approval of STMicr oelectronics.
The ST logo is registered trademark of STMicr oelectronics
2004 STMicroe lectronics - All Rights Reserved
All other names are the property of their respective owners.
STMicroelectronics GROUP OF COMPANIES
Australia - Belgium - Brazil - Canad a - Chi na - Czec h Republic - Finland - France - Germany - Hong Kong - India - Israel - Ital y - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switze rland - United Kingdom - Uni ted States
www.st.com
Obsolete Product(s) - Obsolete Product(s)
