0-G0-G
!"
!"
!"
!"
!"
!" !"
+
!" ,-!
!" ./,!
- 0.01*12-1*3&
!" !,-45
!" 6,'7)/897:
!" -!,
!" -4,.;/
!
"# $%$ $&%'()%&!& $!
*$$& $!%!$+,-
0-G
1-G
2-G
4-G
6-G
8-G
0-G
$./&/&0 $#
1.#$./&0 $#
2 .#0 $#
0
0
0
3 ' 4 0
/5"/&0 $# 0 6 7 3 4 3 ' 7 0
8&$#/!9
:;<
=8
;>/&$.*$!"#
46"# $ >$&!
$! $!:?@2@5!<
= ' 8
*$!0 $#: <=
8 00
$./&
8/$!2 .#0 $#
=
A8
/$#*#:B46< = 8
,$ ?$$$ :;< *
,$ $ /$:;6< / 6 1
9$#$!"$#$/$# >C'
; D$!$$!$$+$$$!$E$
5$!$5()$!$ !&& $#302
6$ $F$+!+$!$!
1399A
• !!"#$•
•%&'(&)*+,,---.&./0•12&%#%3&./0•
° °
!"$%&'223064
Green Products
Green Products in Compliance with the
RoHS Directive
0
0.1
1.0
10
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
I , INSTANTANEOUS FWD CURRENT (A)
F
V , INSTANTANEOUS FWD VOLTAGE(V)
Fig. 2 Typical Fwd Characteristics
F
T = 150°C
J
T = 25°C
J
Pulse Width
= 300 µs
0
80
20
60
40
100
1 10 100
I , PEAK FWD SURGECURRENT (A)
FSM
NUMBEROFCYCLES AT 60 Hz
Fi
g
. 3 Max Non-Repetitive Peak Fwd Sur
g
e Current
T = 150°c
Single Half
Sine Wave
(JEDEC Method)
j
1
10
100
110100
C, JUNCTION CAPACITANCE (pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
T = 25°C
f = 1MHz
j
0.01
0.1
1.0
10
100
1000
10,000
0 20 40 60 80 100 120 140
I , INSTANTANEOUS REVERSE CURRENT (mA)
R
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fi
g
. 5 Typical Reverse Characteristics
T = 125°C
j
T = 100°C
j
T = 25°C
j
T = 150°C
j
0
0.5
1.0
1.5
2.0
0 75 150 225
I , AVERAGE RECTIFIED CURRENT (A)
O
T, TEMPERATURE (°C)
Fi
g
. 1 Forward Current Deratin
g
Curve
0-G0-G
1399A
• !!"#$•
•%&'(&)*+,,---.&./0•12&%#%3&./0•
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest
version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
Green Products
SENSITRON
SEMICONDUCTOR
•!! !!"#$•
•%&'(&)*+,,---.&./0•12&%#%3&./0•
0-G0-G
1399,A
•
•
•
•
•
• 221 West Industry Court ! Deer Par k, NY 11729-4681 ! ( 631) 586- 7600 FAX (631) 242-9798 •
• World Wide Web Sit e - ht tp://www. se nsit ro n.com • E- Mail Address - sales@sensitron.com •
