TELEDYNE COMPONENTS 26E D MM 4517b02 GOOLLLS 7 T-O7-/19 HIGH VOLTAGE -HI Q VARACTRON VA200-213 VOLTAGE - VARIABLE CAPACITANCE DIODES GEOMETRY 415 e ALL EPITAXIAL DO 14 CONSTRUCTION (P+NN+) I 150 VOLTS DC RATING (MWV) rauas i VERY LOW LEAKAGE | -f) =T... e ABRUPT JUNCTION ql 26 yore oh | ELECTRICAL DATA ABSOLUTE MAXIMUM RATINGS wore maszove, |_|} PARAMETER SYMBOL | = MAX. | UNITS OA NRCCULANITES aoe oun Operating Temperature Toor | 65to +150 | C Airbimensions in ince Storage Temperature Tay | 65to +175 | C izes ore [ oad 02] Total Power Dissipation (@ 25C in free air) Po 500 mW Maximum Working Voltage MWY 150 voc ELECTRICAL CHARACTERISTICS (1, = 25C, I= 0.25 wA max. @ 150 VDC, min. Sat. Voltage = 160 V @ 100 2A DC) CAPACITANCE TUNING RATIO fe DIODE Q (min) (min) (Kme-typ) @ MWY (ual TYPE @4de @ -4V de, 30 me C-2V/0-150V VA-200 68 75 6.2 37 Notes: Capacitance values are 20%. Capacitance tolerances of 10% and --5% are available upon request, as well as matched pairs. Capacitance can be modified for specific requirements. fc calculated at MWV. Ie TELEDYNE CRYSTALONICS Wi itsmansiceconbrage macztaousa "4195 F=04- m TELEDYNE COMPONENTS we 8917602 OOObbb4Y 9 mm T-O7-19 ade D VA200 213 Continued 200 700 100 So 600 S f= 500 ww & 9 = = S 200 o w < a a > 200 oO S 100 } so 1 2-3 456 10 20 30 40 5060 200 REVERSE BIAS VOLTAGE (Vdc) REVERSE BIAS VOLTAGE (Vde) TYPICAL DIODE CAPACITANCE VS BIAS FIGURE OF MERIT (Q) VS VOLTAGE CHARACTERISTICS AT 25C BIAS VOLTAGE AT 25C * 10, 5 e PEs & Be ue 96 _s5 = -10 & egos 2 a 2 25 1 10 100 1000 -40 -20 0 20040 60 80 100 120 1590 FREQUENCY (Mc) TEMPERATURE {C) TYPICAL FIGURE OF MERIT VS TEMPERATURE COEFFICIENT OF FREQUENCY AT 25C CAPACITANCE IN PERCENT CHANGE OF 25 VALUE Crystalonics VA200-213 Varactron Voltage-Variable Capacitance Diodes are designed for applications such as VHF-UHF frequency multiplication, harmonic generation, oscillator tuning, electronic tuning, frequency modulation, parametric amplifiers, automatic frequency control, limiting, and switching. These diodes are manu- factured by Crystalonics exclusive Epitaxial Junction Process, which provides close parameter tolerances, high parameter stability, ex- treme ruggedness, and a high product of Q and Maximum Working Voltage. TELEDYNE CRYSTALONICS 447 Sherman Street, Carnbridge, MA 02140 USA Tel: (617) 494-1670 FAX: 617/547-6449 TWX: 740-320-1496 442 pe 4196 F-05 TELEDYNE COMPONENTS 28 D MM 8917602 O00bbbS O om T 07/4 HIGH VOLTAGE - HI Q VARACTRON VA300-313 VOLTAGE - VARIABLE CAPACITANCE DIODES GEOMETRY 415 DO 14 (eo) t e ALL EPITAXIAL Rote 5S CONSTRUCTION (P-+-NN-+) t- eT comin e 200 VOLTS DC RATING (MWV) { "1 e VERY LOW LEAKAGE ik e ABRUPT JUNCTION ore | . p_| NOTE WITHIN THIS ZONE 2 im DIA MAY VARY TO ALLOW ann oe omenimnecucaaries E> Fs oomy ELECTRICAL DATA ABSOLUTE MAXIMUM RATINGS Ait Dimensions in inches 27 . a PARAMETER SYMBOL| MAX. UNITS Lagos [ o70: ob? Operating Temperature Topr -65 to + 150 G Storage Temperature Taty 65 to +175 C Totat Power Dissipation (@ 25C in free air) Po 500 mW Maximum Working Voitage Mwy 200 voc ELECTRICAL CHARACTERISTICS (TA = 25C, IR = 0.25 nA max. @ 200 VDC, min. Sat. Voltage = 240V @ 100A DC) CAPACITANCE TUNING RATIO Rs DIODE (uf Q (min) (min) (a-typ) TYPE @ -4de @ -4V do, 50 mc C-2V C-200V @ -4V VA800 68 60 6.8 4.0 VA304 68 75 6.7 0.7 VA302 47 50 6.7 4.4 VA303 47 75 6.7 09 VA304 83 50 6.7 2.0 VA305 33 75 6.6 1.3 VA306 22 75 6.6 2.0 VA3807 22 400 6.5 46 VA308 16 75 6.2 2.8 VA309 45 400 6.2 2.4 VA310 40 75 6.0 43 VA314 40 400 6.0 3.2 VA312 6.6 76 5.7 6.6 VA313 6.5 400 5.7 49 Notes: Capacitance values are + 20%. Capacitance tolerances of + 40% and +5% are available upon request, as well as matched pairs. Capacitance can be modified for specific requirernents. IS TELEDYNE CRYSTALONICS crest acer eeaie oan R8 sat196 4197 F-06 143