1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES * Low leakage current series * Good surge current capability up to 1000 A * Can be supplied to meet stringent military, aerospace and other high reliability requirements * Compliant to RoHS directive 2002/95/EC DO-203AB (DO-5) PRODUCT SUMMARY IF(AV) 35 A/40 A/60 A MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) IFSM I2 t TEST CONDITIONS TC 1N3765 1N1183A 1N2128A 35 (1) 35 (1) 40 (1) 60 (1) A 140 (1) 140 (1) 150 (1) 140 (1) C 50 Hz 480 380 765 860 60 Hz 500 (1) 400 (1) 800 (1) 900 (1) 50 Hz 1140 730 2900 3700 60 Hz 1040 670 2650 3400 I2t VRRM 1N1183 16 100 Range 50 to 600 10 300 (1) 700 to 1000 41 000 (1) 50 to 600 UNITS A A2s A2s 52 500 (1) 50 to 600 (1) V Note (1) JEDEC registered values ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE (TJ = - 65 C TO 200 C (2)) V TYPE NUMBER VRM, MAXIMUM DIRECT REVERSE VOLTAGE (TJ = - 65 C TO 200 C (2)) V 1N1183 1N1183A 1N2128A 50 (1) 50 (1) 1N1184 1N1184A 1N2129A 100 (1) 100 (1) 1N1185 1N1185A 1N2130A 150 (1) 150 (1) 1N2131A 200 (1) 200 (1) 300 (1) 300 (1) 400 (1) 400 (1) 500 (1) 500 (1) 600 (1) 600 (1) 700 (1) 700 (1) 800 (1) 800 (1) 900 (1) 900 (1) 1N1186 1N1187 1N1188 1N1189 1N1190 1N1186A 1N1187A 1N1188A 1N1189A 1N1190A 1N3765 1N3766 1N3767 1N3768 1N2133A 1N2135A 1N2137A 1N2138A 1000 (1) 1000 (1) Notes (1) JEDEC registered values (2) For 1N1183 Series and 1N3765 Series T = - 65 C to 190 C C * Basic type number indicates cathode to case. For anode to case, add "R" to part number, e.g., 1N1188R, 1N3766R, 1N1186AR, 1N2135AR Document Number: 93492 Revision: 25-May-09 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at case temperature IF(AV) TEST CONDITIONS 1-phase operation, 180 sinusoidal conduction Half cycle 50 Hz sine wave or 6 ms rectangular pulse Maximum peak one cycle non-repetitive surge current IFSM Half cycle 60 Hz sine wave or 5 ms rectangular pulse Half cycle 50 Hz sine wave or 6 ms rectangular pulse Half cycle 60 Hz sine wave or 5 ms rectangular pulse t = 10 ms Maximum I2t for fusing t = 8.3 ms I2 t t = 10 ms Maximum I2t for individual device fusing Maximum I2t for individual device fusing Maximum peak forward voltage at maximum forward current (IFM) t = 8.3 ms I2t (2) VFM Following any rated load condition and with rated VRRM applied VRRM = 800 VRRM = 900 IR(AV) 35 (1) 140 (1) 35 140 (1) (1) 40 150 (1) (1) 60 140 (1) (1) 480 380 765 860 500 (1) 400 (1) 800 (1) 900 (1) UNITS A C A Following any rated load condition and with 1/2 VRRM applied following surge = 0 With rated VRRM applied following surge, initial TJ = TJ maximum With VRRM = 0 following surge, initial TJ = TJ maximum t = 0.1 to 10 ms, VRRM = 0 following surge TJ = 25 C VRRM = 700 Maximum average reverse current 1N1183 1N3765 1N1183A 1N2128A Maximum rated IF(AV) and TC VRRM = 1000 570 455 910 1000 595 475 950 1050 1140 730 2900 3700 1040 670 2650 3400 A2s 1610 1030 4150 5250 1470 940 3750 4750 16 100 10 300 41 500 52 500 A2s 1.7 (1) 1.8 (1) 1.3 (1) 1.3 (1) V 110 110 126 188 A - 5.0 (1) - - - 4.0 (1) - - 3.0 (1) - - 2.0 (1) - - Maximum rated IF(AV), VRRM and TC 10 (1) - 2.5 mA (1) 10 (1) Notes (1) JEDEC registered values (2) I2t for time t = I2t x t x x www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 93492 Revision: 25-May-09 1N1183, 1N3765, 1N1183A, 1N2128A Series Power Silicon Rectifier Diodes, 35 A/40 A/60 A Vishay High Power Products THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 1N1183 1N3765 1N1183A 1N2128A UNITS Maximum operating case temperature range TC - 65 to 190 (1) - 65 to 200 Maximum storage temperature range TStg - 65 to 175 (1) - 65 to 200 Maximum internal thermal resistance, junction to case RthJC DC operation Thermal resistance, case to sink RthCS Mounting surface, smooth, flat and greased C 1.00 (1) Lubricated thread, tighting on nut (2) 0.25 3.4 (30) 2.3 (20) Not lubricated thread, tighting on hexagon (3) 4.2 (37) Lubricated thread, tighting on hexagon (3) 3.2 (28) Approximate weight Case style 0.65 (1) C/W Not lubricated thread, tighting on nut (2) Maximum allowable mounting torque (+ 0 %, - 10 %) 1.1 (1) JEDEC N*m (lbf * in) 17 g 0.6 oz. DO-203AB (DO-5) Notes (1) JEDEC registered values (2) Recommended for pass-through holes (3) Recommended for holed threaded heatsinks Fig. 1 - Maximum Allowable Case Temperature vs. Average Forward Current, 1N1183 and 1N3765 Series Document Number: 93492 Revision: 25-May-09 Fig. 2 - Typical Low Level Forward Power Loss vs. Average Forward Current (Sinusoidal Current Waveform), 1N1183 and 1N3765 Series For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A Fig. 3 - Typical High Level Forward Power Loss vs. Average Forward Current (Sinusoidal Current Waveform), 1N1183 and 1N3765 Series Fig. 4 - Typical Forward Voltage vs. Forward Current, 1N1183 and 1N3765 Series Fig. 5 - Maximum Non-Repetitive Surge Current vs. Number of Current Pulses, 1N1183 and 1N3765 Series www.vishay.com 4 Fig. 6 - Average Forward Current vs. Maximum Allowable Case Temperature, 1N1183A Series Fig. 7 - Maximum Low Level Forward Power Loss vs. Average Forward Current, 1N1183A Series Fig. 8 - Maximum High Level Forward Power Loss vs. Average Forward Current, 1N1183A Series For technical questions, contact: ind-modules@vishay.com Document Number: 93492 Revision: 25-May-09 1N1183, 1N3765, 1N1183A, 1N2128A Series Power Silicon Rectifier Diodes, 35 A/40 A/60 A Vishay High Power Products Fig. 9 - Maximum Forward Voltage vs. Forward Current, 1N1183A Series Fig. 12 - Maximum Allowable Case Temperature vs. Average Forward Current, 1N2128A Series Fig. 10 - Maximum Non-Repetitive Surge Current vs. Number of Current Pulses, 1N1183A Series Fig. 13 - Maximum Low Level Forward Power Loss vs. Average Forward Current, 1N2128A Series Fig. 11 - Maximum Non-Repetitive Surge Current vs. Number of Current Pulses, 1N2128A Series Fig. 14 - Maximum High Level Forward Power Loss vs. Average Forward Current, 1N2128A Series Document Number: 93492 Revision: 25-May-09 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A Fig. 15 - Maximum Forward Voltage vs. Forward Current, 1N2128A Series LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 6 www.vishay.com/doc?95360 For technical questions, contact: ind-modules@vishay.com Document Number: 93492 Revision: 25-May-09 Outline Dimensions Vishay Semiconductors DO-203AB (DO-5) for 1N1183, 1N3765, 1N1183A, 1N2128A, 1N3208 Series DIMENSIONS in millimeters (inches) O 14.6 (0.57) 6.1 (0.24) 7.0 (0.28) O 4.10 (0.16) O 3.80 (0.15) 1.03 (0.04) MAX. 4 (0.16) MIN. 25.4 (1.0) MAX. 10.8 (0.43) 11.4 (0.45) 10.7 (0.42) 11.5 (0.45) 1/4" 28UNF-2A for metric devices: M6 x 1 1.0 (0.04) MAX. Document Number: 95360 Revision: 29-Sep-08 17.40 (0.68) MIN. Across flats For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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