DSEI2x101-06A
2
3
1
4
Low Loss and Soft Recovery
Fast Recovery Epitaxial Diode
Parallel legs
FRED
Part number
DSEI2x101-06A
Backside: isolated
FAV
rr
t ns35
RRM
96
600
=
V=V
I=A
2x
Features / Advantages: Applications: Package:
● Planar passivated chips
● Low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
SOT-227B (minibloc)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Isolation Voltage: V~
3000
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms and Conditions of Usage
IXYS reserves the right to change limits, conditions and dimensions. 20130703bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSEI2x101-06A
ns
27 A
T
VJ
= °C
reverse recovery time
A40
80
150
ns
I
RM
max. reverse recovery current
I
F
= A;100
25
T = 100 °C
VJ
-di
F
= A/µs600/dt
t
rr
V
R
= V300
T
VJ
= °C25
T = 100 °C
VJ
V = V
Symbol
Definition
Ratings
typ.
max.
I
R
IA
V
F
1.25
R0.5 K/W
R
min.
96
V
RSM
3T = 25°C
VJ
T = °C
VJ
mA20V = V
R
T = 25°C
VJ
I = A
F
T = °C
C
70
P
tot
250 WT = 25°C
C
RK/W
100
480
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions
Unit
1.40
T = 25°C
VJ
125
V
F0
0.70T = °C
VJ
150
r
F
4.7
mΩ
1.17T = °C
VJ
I = A
F
100
1.70
I = A
F
200
I = A
F
200
threshold voltage
slope resistance for power loss calculation only
mA
150
V
RRM
600
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
107
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current
V = 0 V
R
T = °C
VJ
150
1.20 kA
600
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Fast Diode
600
0.10
IXYS reserves the right to change limits, conditions and dimensions. 20130703bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSEI2x101-06A
Ratings
abcdZyyww
XXXXX
Product Marking
Logo
Part No.
DateCode
Assembly Code
Assembly Line
®
Package
T
op
°C
M
D
Nm1.5
mounting torque
1.1
T
VJ
°C150
virtual junction temperature
-40
Weight g30
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
M
T
Nm1.5
terminal torque
1.1
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
10.5 3.2
8.6 6.8
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
150 A
per terminal
125-40
terminal to terminal
SOT-227B (minibloc)
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
DSEI2x101-06A 468029Tube 10DSEI2x101-06AStandard
3000
ISOL
T
stg
°C150
storage temperature
-40
2500
threshold voltage
V0.7
mΩ
V
0 max
R
0 max
slope resistance *
3.5
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Fast
Diode
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130703bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSEI2x101-06A
2
3
1
4
Outlines SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions. 20130703bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSEI2x101-06A
200 600 10000 400 800
120
140
160
180
200
220
240
260
0.001 0.01 0.1 1 10
0.1
1
0 50 100 150
0.4
0.6
0.8
1.0
1.2
1.4
0 200 400 600 800 1000
10
30
50
0
20
40
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
200 600 10000 400 800
10
30
50
70
0
20
40
60
8
0
0001001
0
1
2
3
4
5
6
7
0.0 0.5 1.0 1.5
0
25
50
75
100
125
1
50
0.1
0.2
0.3
0.05
t [s]
I
F
[A]
-di
F
/dt [A/µs]V
F
[V]
Q
r
[µC]
-di
F
/dt [A/µs]
I
RM
[A]
-di
F
/dt [A/µs] -di
F
/dt [A/µs]
V
FR
[V]
t
rr
[ns]
t
fr
[µs]
V
FR
T
VJ
[°C]
K
f
Z
thJC
[K/W]
I
RM
Q
rr
Fig. 1 Forward current
I
F
versus V
F
Fig. 2 Typ. reverse recov. charge
Q
rr
versus -di
F
/dt
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
Fig. 4 Typ. dyn. parameters
Q
r
, I
RM
versus T
VJ
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
F
ig
.
7
T
r
an
s
i
en
t t
he
r
m
al
i
m
pedan
c
e
j
un
c
t
ion
t
o
c
a
s
e
Constants for Z
thJC
calculation:
i R
thi
t
i
[K/W] [s]
1 0.020 0.00002
2 0.050 0.00081
3 0.076 0.01000
4 0.240 0.09400
5 0.114 0.45000
T
VJ
= 150°C
100°C
25°C
I
F
= 200 A
100 A
50 A
T
VJ
= 100°C
V
R
= 300 V
I
F
= 200 A
100 A
50 A
T
VJ
= 100°C
V
R
= 300 V
T
VJ
= 100°C
V
R
= 300 V T
VJ
= 100°C
V
R
= 300 V
I
F
= 200 A
100 A
50 A t
fr
D=0.7
0.5
0.05
Single Pulse
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions. 20130703bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved