© 2006 IXYS All rights reserved DS99509E(04/06)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 µA 500 V
VGS(th) VDS = VGS, ID = 250 µA 3.0 5.5 V
IGSS VGS = ±30 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS 5µA
VGS = 0 V TJ = 125°C 200 µA
RDS(on) VGS = 10 V, ID = 1.8 A 2.0
Note 1
PolarHVTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFP 3N50PM VDSS = 500 V
ID25 = 2.7 A
RDS(on)
2.0
trr
200 ns
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C; RGS = 1 M500 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C 2.7 A
IDM TC= 25°C, pulse width limited by TJM 8A
IAR TC= 25°C3A
EAR TC= 25°C10mJ
EAS TC= 25°C 100 mJ
dv/dt IS I
DM, di/dt 100 A/µs, VDD V
DSS, 10 V/ns
TJ 150°C, RG = 50
PDTC= 25°C36W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
TSOLD Plastic body for 10 s 260 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight 4g
G = Gate D = Drain
S = Source
Features
lPlastic overmolded tab for electrical
isolation
lFast intrinsic diode
lInternational standard package
lUnclamped Inductive Switching (UIS)
rated
lLow package inductance
- easy to drive and to protect
Advantages
lEasy to mount
lSpace savings
lHigh power density
OVERMOLDED TO-220
(IXTP...M) OUTLINE
GDS
Isolated Tab
(Electrically Isolated Tab)
Preliminary Technical Information
http://store.iiic.cc/
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFP 3N50PM
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 10 V; ID = 1.8 A, Note 1 3.5 S
Ciss 409 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 48 pF
Crss 6.1 pF
td(on) 25 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 3.6 A 28 ns
td(off) RG = 50 (External) 63 ns
tf29 ns
Qg(on) 9.3 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 1.8 3.3 nC
Qgd 3.4 nC
RthJC 3.5 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 3.6 A
ISM Repetitive 5 A
VSD IF = IS, VGS = 0 V, Note 1 1.5 V
trr IF = 3.6 A, -di/dt = 100 A/µs, 200 ns
QRM VR = 100 V, VGS = 0 V 0.1 µC
IRM 0.5 A
Notes: 1) Pulse test, t 300 µs, duty cycle d 2 %
2) Test current IT = 2.5 A
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
123
ISOLATED TO-220 (IXTP...M)
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered
are derived from data gathered during objective characterizations of preliminary engineer-
ing lots; but also may yet contain some information supplied during a pre-production
design evaluation. IXYS reserves the right to change limits, test conditions, and dimen-
sions without notice.
http://store.iiic.cc/