IXYS reserves the right to change limits, test conditions, and dimensions.
IXFP 3N50PM
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 10 V; ID = 1.8 A, Note 1 3.5 S
Ciss 409 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 48 pF
Crss 6.1 pF
td(on) 25 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 3.6 A 28 ns
td(off) RG = 50 Ω (External) 63 ns
tf29 ns
Qg(on) 9.3 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 1.8 3.3 nC
Qgd 3.4 nC
RthJC 3.5 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 3.6 A
ISM Repetitive 5 A
VSD IF = IS, VGS = 0 V, Note 1 1.5 V
trr IF = 3.6 A, -di/dt = 100 A/µs, 200 ns
QRM VR = 100 V, VGS = 0 V 0.1 µC
IRM 0.5 A
Notes: 1) Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2) Test current IT = 2.5 A
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
123
ISOLATED TO-220 (IXTP...M)
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered
are derived from data gathered during objective characterizations of preliminary engineer-
ing lots; but also may yet contain some information supplied during a pre-production
design evaluation. IXYS reserves the right to change limits, test conditions, and dimen-
sions without notice.
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