© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 7
1Publication Order Number:
NTD4815N/D
NTD4815N, NVD4815N
Power MOSFET
30 V, 35 A, Single N−Channel, DPAK/IPAK
Features
•Low RDS(on) to Minimize Conduction Losses
•Low Capacitance to Minimize Driver Losses
•Optimized Gate Charge to Minimize Switching Losses
•AEC−Q101 Qualified and PPAP Capable − NVD4815N
•These Devices are Pb−Free and are RoHS Compliant
Applications
•CPU Power Delivery
•DC−DC Converters
•High Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 30 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain
Current RqJA
(Note 1)
Steady
State
TA = 25°CID8.5 A
TA = 85°C 6.5
Power Dissipation
RqJA (Note 1)
TA = 25°C PD1.92 W
Continuous Drain
Current RqJA
(Note 2)
TA = 25°CID 6.9 A
TA = 85°C 5.3
Power Dissipation
RqJA (Note 2)
TA = 25°C PD1.26 W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°CID35 A
TC = 85°C 27
Power Dissipation
RqJC (Note 1)
TC = 25°C PD32.6 W
Pulsed Drain
Current
tp=10msTA = 25°C IDM 87 A
Current Limited by Package TA = 25°C IDmaxPkg 35 A
Operating Junction and Storage
Temperature
TJ,
TSTG
−55 to
+175
°C
Source Current (Body Diode) IS27 A
Drain to Source dV/dt dV/dt 6 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
IL = 11 Apk, L = 1.0 mH, RG = 25 W)
EAS 60.5 mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAMS
& PIN ASSIGNMENTS
http://onsemi.com
V(BR)DSS RDS(ON) MAX ID MAX
30 V
15 mW @ 10 V
35 A
25 mW @ 4.5 V
G
S
N−CHANNEL MOSFET
D
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
YWW
4815NG
1
Gate
2
Drain 3
Source
4
Drain 4
Drain
2
Drain
1
Gate 3
Source
YWW
4815NG
Y = Year
WW = Work Week
4815N = Device Code
G = Pb−Free Package
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
12
3
4
123
4
CASE 369AC
3 IPAK
(Straight Lead)
NTD4815N, NVD4815N
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2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain) RqJC 4.6 °C/W
Junction−to−TAB (Drain) RqJC−TAB 3.5
Junction−to−Ambient – Steady State (Note 1) RqJA 78
Junction−to−Ambient – Steady State (Note 2) RqJA 119
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
25 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 24 V
TJ = 25 °C 1
mA
TJ = 125°C 10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.5 2.5 V
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ5.6 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V to
11.5 V
ID = 30 A 12 15
mW
ID = 15 A 11.5
VGS = 4.5 V ID = 30 A 21 25
ID = 15 A 18.3
Forward Transconductance gFS VDS = 15 V, ID = 10 A 6.0 S
CHARGES AND CAPACITANCES
Input Capacitance CISS
VGS = 0 V, f = 1.0 MHz, VDS = 12 V
770
pF
Output Capacitance COSS 181
Reverse Transfer Capacitance CRSS 108
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 15 V; ID = 30 A
6.0 6.6
nC
Threshold Gate Charge QG(TH) 0.9
Gate−to−Source Charge QGS 2.5
Gate−to−Drain Charge QGD 3.1
Total Gate Charge QG(TOT) VGS = 11.5 V, VDS = 15 V;
ID = 30 A
14.1 nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time td(ON)
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
RG = 3.0 W
10.5
ns
Rise Time tr21.4
Turn−Off Delay Time td(OFF) 11.4
Fall Time tf3.5
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD4815N, NVD4815N
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3
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionSymbol
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time td(ON)
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
6.3
ns
Rise Time tr17.6
Turn−Off Delay Time td(OFF) 18.4
Fall Time tf2.3
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 30 A
TJ = 25°C 1.0 1.2
V
TJ = 125°C 0.92
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
15.3
ns
Charge Time ta8.7
Discharge Time tb6.6
Reverse Recovery Charge QRR 5.5 nC
PACKAGE PARASITIC VALUES
Source Inductance LS
TA = 25°C
2.49 nH
Drain Inductance, DPAK LD0.0164
Drain Inductance, IPAK LD1.88
Gate Inductance LG3.46
Gate Resistance RG2.6 W
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD4815N, NVD4815N
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4
TYPICAL PERFORMANCE CURVES
3.2 V
4 V
5.5 V to 10 V
5
0.020
15
0.005
030
1.5
1.0
0.5
10,000
100,000
0
30
21
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
0
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
24
0.020
0.010
0
5
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
ID, DRAIN CURRENT (AMPS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 5. On−Resistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
IDSS, LEAKAGE (nA)
−50 50250−25 75 125100
23
1612 324
3
VDS ≥ 10 V
TJ = 25°C
TJ = −55°C
TJ = 125°C
VGS = 4.5 V
175
VGS = 0 V
ID = 30 A
VGS = 10 V
50
TJ = 175°C
TJ = 125°C
40
0
45
TJ = 25°C
20
10
5 V
3 V
2.0
10
1000
410
612
0.030
20
0.010
25
4.5 V
3.4 V
3.6 V
3.8 V
40
10
20
60
30
20
80
10
50
ID = 30 A
TJ = 25°C
789
0.005
0.015
0.025
VGS = 11.5 V
150
100
TJ = 25°C
0.015
10
5
60
70
6789
31011
0.030
0.025
82428
NTD4815N, NVD4815N
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5
TYPICAL PERFORMANCE CURVES
Crss
10 0 10 15 30
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Figure 7. Capacitance Variation
1000
0
VGS VDS
1400
55
VGS = 0 VVDS = 0 V TJ = 25°C
Ciss
Coss
Crss
Ciss
1300
1500
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
0
2
0
QG, TOTAL GATE CHARGE (nC)
1
4
65
ID = 30 A
TJ = 25°C
Q2
Q1
QT
7
0
0.4
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
IS, SOURCE CURRENT (AMPS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
RG, GATE RESISTANCE (OHMS)
1 10 100
1000
1
t, TIME (ns)
VGS = 0 V
Figure 10. Diode Forward Voltage vs. Current
100
0.6 0.7 1.1
5
10
15
tr
td(off)
td(on)
tf
10
VDD = 15 V
ID = 30 A
VGS = 11.5 V
0.8 0.9
20
30
25 TJ = 25°C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1 1 100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.1
1000
ID, DRAIN CURRENT (AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
1 ms
100 ms
10 ms
dc
10 ms
20
6
1
100
0
25
TJ, JUNCTION TEMPERATURE (°C)
ID = 11 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
50 75 175
10
30
40
100 125
50
70
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
150
500
20
25
1200
1100
900
800
700
600
100
400
300
200
0.5 1.0
60
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
2
0
8
4
6
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
3
5
10
16
12
14
VGS
VDS
3241
NTD4815N, NVD4815N
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6
TYPICAL PERFORMANCE CURVES
Figure 13. Avalanche Characteristics
10001 100
PULSE WIDTH (ms)
0.1
ID, DRAIN CURRENT (AMPS)
10
10
125°C
1
100
100°C25°C
Figure 14. Thermal Response
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
t, TIME (ms)
0.1
1.0
0.01
0.1
0.2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
1.0E+00 1.0E+011.0E-011.0E-021.0E-031.0E-041.0E-05
ORDERING INFORMATION
Device Package Shipping†
NTD4815NT4G DPAK
(Pb−Free)
2500 / Tape & Reel
NTD4815N−35G IPAK Trimmed Lead
(3.5 " 0.15 mm)
(Pb−Free)
75 Units / Rail
NVD4815NT4G DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTD4815N, NVD4815N
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7
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA−01
ISSUE B
b
D
E
b3
L3
L4
b2
eM
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D0.235 0.245 5.97 6.22
E0.250 0.265 6.35 6.73
A0.086 0.094 2.18 2.38
b0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.030 0.045 0.76 1.14
c0.018 0.024 0.46 0.61
e0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
12 3
4
H0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2 GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
ǒmm
inchesǓ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
NTD4815N, NVD4815N
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8
PACKAGE DIMENSIONS
3 IPAK, STRAIGHT LEAD
CASE 369AC−01
ISSUE O
D
A
K
B
R
V
F
G
3 PL
E
C
J
H
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.245 5.97 6.22
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.018 0.023 0.46 0.58
F0.037 0.043 0.94 1.09
G0.090 BSC 2.29 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.134 0.142 3.40 3.60
R0.180 0.215 4.57 5.46
V0.035 0.050 0.89 1.27
W0.000 0.010 0.000 0.25
NOTES:
1.. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2.. CONTROLLING DIMENSION: INCH.
3. SEATING PLANE IS ON TOP OF
DAMBAR POSITION.
4. DIMENSION A DOES NOT INCLUDE
DAMBAR POSITION OR MOLD GATE.
W
SEATING PLANE
0.13 (0.005) W
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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PUBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
NTD4815N/D
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