Data Sheet 1 Rev.1.3, 2009-12-04
Speed TEMPFET
BTS247Z
Speed TEMPFET®
®®
®
N-Channel
Enhancement mode
Logic Level Input
Analog driving possible
Fast switching up to 1 MHz
Potential-free temperature sensor with
thyristor characteristics
Overtemperature protection
Avalanche rated
15
Type V
DS
R
DS(on)
Package Ordering Code
BTS 247 Z 55 V 18 m
PG-TO220-5-3 On Request
PG-TO220-5-62 On Request
PG-TO-220-5-43 On Request
Temperature
Sensor
G
Pin 1
A
Pin 2
D
Pin 3 and TAB
K
Pin 4
S
Pin 5
Pin Symbol Function
1 G Gate
2 A Anode Temperature Sensor
3 D Drain
4 K Cathode Temperature Sensor
5 S Source
•Green Product (RoHS Compliant)
•AEC Qualified
PG-TO220-5-62 PG-TO220-5-3
PG-TO220-5-43
Speed TEMPFET
BTS247Z
Data Sheet 2 Rev.1.3, 2009-12-04
Maximum Ratings
Parameter Symbol Value Unit
Drain source voltage VDS 55 V
Drain-gate voltage,RGS = 20 k
VDGR 55
Gate source voltage VGS
20
Nominal load current (ISO 10483)
VGS = 4.5 V, VDS

0.5 V, TC = 85 °C
VGS = 10 V, VDS

0.5 V, TC = 85 °C
ID(ISO)
12
19
A
Continuous drain current 1)
TC = 100 °C, VGS = 4.5V
ID33
Pulsed drain current ID
p
uls 180
Avalanche energy, single pulse
ID = 12 A, RGS = 25
EAS 1.3 J
Power dissipation
TC = 25 °C
Ptot 120 W
Operating temperature 2) T
j
-40 ...+175 °C
Peak temperature ( single event ) T
jp
eak 200
Storage temperature Tst
g
-55 ... +150
DIN humidity category, DIN 40 040 E
IEC climatic category; DIN IEC 68-1 40/150/56
1current limited by bond wire
2Note: Thermal trip temperature of temperature sensor is below 175°C
Data Sheet 3 Rev.1.3, 2009-12-04
Speed TEMPFET
BTS247Z
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
junction - case: RthJC - - 1.25 K/W
Thermal resistance @ min. footprint Rth
(
JA
)
- - 62
Thermal resistance @ 6 cm2 cooling area 1) Rth
(
JA
)
- 33 40
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = 25°C, unless otherwise specified min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS = 0 V, ID = 0.25 mA
V(BR)DSS 55 - - V
Gate threshold voltage, VGS = VDS
ID = 90 μA
ID = 250 μA
VGS(th)
1.2
-
1.6
1.65
2
-
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = -40 °C
VDS = 50 V, VGS = 0 V, Tj = 25 °C
VDS = 50 V, VGS = 0 V, Tj = 150 °C
IDSS
-
-
-
-
0.1
-
0.1
1
100
μA
Gate-source leakage current
VGS = 20 V, VDS = 0 V, Tj = 25 °C
VGS = 20 V, VDS = 0 V, Tj = 150 °C
IGSS
-
-
10
20
100
100
nA
Drain-Source on-state resistance
VGS = 4.5 V, ID = 12 A
VGS = 10 V, ID = 12 A
RDS(on)
-
-
22
15
28
18
m
1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for drain
connection. PCB mounted vertical without blown air.
Speed TEMPFET
BTS247Z
Data Sheet 4 Rev.1.3, 2009-12-04
Electrical Characteristics
Parameter Symbol Values Unit
at T
j
= 25°C, unless otherwise specified min. typ. max.
Dynamic Characteristics
Forward transconductance
V
DS
>2*I
D
*R
DS(on)max
, I
D
= 33 A
g
fs
10 - - S
Input capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
iss
- 1380 1730 pF
Output capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
oss
- 410 515
Reverse transfer capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
rss
- 230 290
Turn-on delay time
V
DD
= 30 V, V
GS
= 4.5 V, I
D
= 45 A,
R
G
= 3.6
t
d(on)
- 15 25 ns
Rise time
V
DD
= 30 V, V
GS
= 4.5 V, I
D
= 45 A,
R
G
= 3.6
t
r
- 30 45
Turn-off delay time
V
DD
= 30 V, V
GS
= 4.5 V, I
D
= 45 A,
R
G
= 3.6
t
d(off)
- 30 45
Fall time
V
DD
= 30 V, V
GS
= 4.5 V, I
D
= 45 A,
R
G
= 3.6
t
f
- 20 30
Gate Charge Characteristics
Gate charge at threshold
V
DD
= 40 V, I
D
= 0.1 A, V
GS
= 0 to 1 V
Q
g(th)
- 2 3 nC
Gate charge at 5.0 V
V
DD
= 40 V, I
D
= 45 A, V
GS
= 0 to 5 V
Q
g(5)
- 35 55
Gate charge total
V
DD
= 40 V, I
D
= 45 A, V
GS
= 0 to 10 V
Q
g(total)
- 60 90
Gate plateau voltage
V
DD
= 40 V, I
D
= 45 A
V
(plateau)
- 4.5 - V
Data Sheet 5 Rev.1.3, 2009-12-04
Speed TEMPFET
BTS247Z
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = 25°C, unless otherwise specified min. typ. max.
Reverse Diode
Inverse diode continuous forward current
TC = 25 °C
IS33 - - A
Inverse diode direct current,pulsed
TC = 25 °C
IFM 180 - -
Inverse diode forward voltage
VGS = 0 V, IF = 90 A
VSD - 1.1 1.7 V
Reverse recovery time
VR = 30 V, IF=IS,diF/dt = 100 A/μs
trr - 75 115 ns
Reverse recovery charge
VR = 30 V, IF=IS,diF/dt = 100 A/μs
Qrr - 0.15 0.25 μC
Sensor Characteristics
For temperature sensing, i.e. temperature protection, please consider application note
"Temperature sense concept - Speed TEMPFET”.
For short circuit protection please consider application note "Short circuit behaviour of
the Speed TEMPFET family”.
All application notes are available at http://www.infineon.com/tempfet/
Forward voltage
IAK(on) = 5 mA, Tj = -40...+150 °C
IAK(on) = 1.5 mA, Tj = 150 °C
VAK(on)
-
-
1.3
-
1.4
0.9
V
Sensor override
tP = 100 μs, Tj = -40...+150 °C
- - 10
Forward current
Tj = -40...+150 °C
IAK(on) - - 5 mA
Sensor override
tP = 100 μs, Tj = -40...+150 °C
- - 600
Speed TEMPFET
BTS247Z
Data Sheet 6 Rev.1.3, 2009-12-04
Electrical Characteristics
Parameter Symbol Values Unit
at T
j
= 25°C, unless otherwise specified min. typ. max.
Sensor Characteristics
Temperature sensor leakage current
Tj = 150 °C
IAK(off) - - 4 μA
Min. reset pulse duration 1)
Tj = -40...+150 °C, IAK(on) = 0.3 mA,
VAK(Reset)<0.5V
treset 100 - - μs
VAK Recovery time1)2)
Tj = -40...+150 °C, IAK(on) = 0.3 mA
trecovery - - 150
Characteristics
Holding current, VAK(off) = 5V
Tj = 25 °C
Tj = 150 °C
IAK(hold)
0.05
0.05
-
-
0.5
0.3
mA
Thermal trip temperature
VTS = 5V
TTS(on) 150 160 170 °C
Turn-off time (Pin G+A and K+S connected)
VTS = 5V, ITS(on) = 2 mA
toff 0.5 - 2.5 μs
Reset voltage
Tj = -40...+150°C
VAK(reset) 0.5 - - V
Sensor recovery behaviour:
V
AK
[V ]
t
reset
t
recovery
5
4
0
ON Reset OFFSensor
Sensor RESET
1See diagram Sensor recovery behaviour
2Time after reset pulse until VAK reaches 4V again
Data Sheet 7 Rev.1.3, 2009-12-04
Speed TEMPFET
BTS247Z
2 Drain current
ID = f(TC); VGS
4.5V
0 20 40 60 80 100 120 140
°C
180
T
C
0
5
10
15
20
25
30
A
40
ID
1 Maximum allowable power dissipation
Ptot = f(TC)
-40 0 40 80 120
°C
180
T
C
0
10
20
30
40
50
60
70
80
90
100
110
W
130
Ptot
3 Typ. transient thermal impedance
ZthJA=f(tp) @ 6 cm2 cooling area
Parameter: D=tp/T
10 -5 10 -4 10 -3 10 -2 10 -1 10 010 110 3
s
t
p
-1
10
0
10
1
10
2
10
K/W
Z
thJA
Single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
4 Transient thermal impedance
ZthJC = f(tp)
parameter : D=tp/T
10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 010 2
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
thJC
Single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
Speed TEMPFET
BTS247Z
Data Sheet 8 Rev.1.3, 2009-12-04
5 Safe operating area
ID=f(VDS); D=0.01; TC=25°C; VGS=4.5V
10 010 110 2
V
V
DS
0
10
1
10
2
10
3
10
A
ID
tp=10μs
10ms
1ms
Rdson=Vds/Id
100μs
6 Typ. output characteristic
ID = f(VDS); Tj=25°C
Parameter: VGS
0 1 2
V
4
V
DS
0
20
40
60
80
A
120
ID
3V
3.5V
4V
4.5V
5V
6V
7V
10V
7 On-state resistance
RON = f(Tj); ID=12A; VGS = 4.5V
-50 -25 0 25 50 75 100 125
°C
175
T
j
0
5
10
15
20
25
30
35
40
45
50
m
60
R
DS(on)
typ.
max
8 On-state resistance
RON = f(Tj); ID=12A; VGS = 10V
-50 -25 0 25 50 75 100 125
°C
175
T
j
0
5
10
15
20
25
30
m
40
R
DS(on)
typ.
max
Data Sheet 9 Rev.1.3, 2009-12-04
Speed TEMPFET
BTS247Z
9 Typ. transfer characteristics
ID = f(VGS); VDS = 12V; Tj = 25°C
0 1 2 3
V
5
V
GS
0
10
20
30
40
50
A
70
ID
10 Typ. input threshold voltage
VGS(th) = f(Tj); VDS=VGS
Parameter: ID
-50 -25 0 25 50 75 100 125
°C
175
T
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
2.4
VGS(th)
90μA
0.9mA
9mA
90mA
11 Typ. capacitances
C = f(VDS); VGS=0 V, f=1 MHz
0 4 8 12 16 20 24 28 32
V
40
V
DS
-1
10
0
10
1
10
nF
C
Ciss
Coss
Crss
12 Typ. forward charcteristics of
reverse diode IF = f(VSD)
tp = 80μs (spread); Parameter: T
j
0.0 0.2 0.4 0.6 0.8 1.0
V
1.4
V
SD
-1
10
0
10
1
10
2
10
A
I
F
25°C
150°C
Speed TEMPFET
BTS247Z
Data Sheet 10 Rev.1.3, 2009-12-04
13 Typ. gate charge
VGS = f(QGate); ID puls = 45 A
0 10 20 30 40 50 60 70 80 nC 100
Q
Gate
0
2
4
6
8
10
12
V
16
BTS 247 Z
VGS
0,8 VDS max
DS max
V
0,2
14 Drain-source break down voltage
V(BR)DSS = f(Tj)
-40 0 40 80 120
°C
180
T
j
50
52
54
56
58
60
62
V
66
V
(BR)DSS
Data Sheet 11 Rev.1.3, 2009-12-04
Speed TEMPFET
BTS247Z
Package Outlines
1 Package Outlines
Figure 1 PG-TO220-5-3
Figure 2 PG-TO220-5-62
±0.2
9.5 A
7.5
6.6
2.8
±0.2
3.7
-0.15
C
17.5
±0.3
15.6
±0.3
13
±0.3
8.6
±0.3
10.2
0...0.15
0.25
±0.1
5 x 0.8
AB
MC
4 x 1.7
1.3
B
+0.1
-0.02
4.4
1)
0.05
9.2
±0.2
0.5±0
2.4
4.5±0.3
±0.3
8.4
±0.3
3.3
Back side, heatsink contour
All metal surfaces tin plated, except area of cut.
1) Shear and punch direction no burrs this surface
P-TO220-5-62-PO V01
A B
+0.1
1.3
+3˚
5˚
1.5
-0.02
+0.1
5 x 0.8
-0.03
0.05
0.1 B
0.25 MA B
1)
9.9
(14.1)
±0.2
±0.25
9.2
8.0
0...0.15
4 x 1.7
6.5
+0.15
0.1
2.4
±0.3
3.6
0.5
4.4
7.5
6.6
(1.3)
±0.15
10.5
All metal surfaces tin plated, except area of cut.
1) Shear and punch direction no burrs this surface.
Back side, heatsink contour
Speed TEMPFET
BTS247Z
Package Outlines
Data Sheet 12 Rev.1.3, 2009-12-04
Figure 3 PG-TO220-5-43
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
6.6
7.5
9.5±0.2
9.9
±0.2 A
13
15.6±0.3
17.5±0.3
C
0...0.15
2.8±0.2
3.7-0.15
±0.5
13.5
5 x 0.8±0.1
1.7
4 x 0.25 MBA C
1.3-0.02
+0.1 4.4
B
9.2±0.2
1)
0.05
±0
.1
0.5
2.4
1) Shear and punch direction no burrs this surface
All metal surfaces tin plated, except area of cut.
Back side, heatsink contour
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.Dimensions in mm
Data Sheet 13 Rev.1.3, 2009-12-04
Speed TEMPFET
BTS247Z
Revision History
2 Revision History
Revision Date Changes
1.3 2009-12-04 updated package drawing of PG-TO220-5-62
1.2 2009-07-31 removed 100ms and DC line in SOA diagram
1.1 2008-11-10 all pages:
added new Infineon logo
Initial version of RoHS-compliant derivate of the BTS247Z
Page 1 and 12: added RoHS compliance statement and Green product feature
Page 1, 11 and 12: Package changed to RoHS compliant version
page 13: added Revision history
page 14: update of disclaimer
Edition 2009-12-04
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
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Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
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