Speed TEMPFET BTS247Z Speed TEMPFET(R) (R) N-Channel Enhancement mode Logic Level Input 1 Analog driving possible 5 PG-TO220-5-62 Fast switching up to 1 MHz PG-TO220-5-3 Potential-free temperature sensor with thyristor characteristics Overtemperature protection *Green Product (RoHS Compliant) Avalanche rated *AEC Qualified Type BTS 247 Z VDS 55 V RDS(on) 18 m PG-TO220-5-43 Package Ordering Code PG-TO220-5-3 On Request PG-TO220-5-62 On Request PG-TO-220-5-43 On Request D Pin 3 and TAB G Pin 1 A Pin 2 Temperature Sensor K Pin 4 S Pin 5 Data Sheet Pin Symbol Function 1 G Gate 2 A Anode Temperature Sensor 3 D Drain 4 K Cathode Temperature Sensor 5 S Source 1 Rev.1.3, 2009-12-04 Speed TEMPFET BTS247Z Maximum Ratings Parameter Symbol Drain source voltage VDS V Drain-gate voltage, RGS = 20 k DGR Gate source voltage VGS Nominal load current (ISO 10483) ID(ISO) VGS = 4.5 V, VDS 0.5 V, TC = 85 C VGS = 10 V, VDS Value 55 Unit V 55 20 A 12 0.5 V, TC = 85 C 19 ID 33 Pulsed drain current ID puls 180 Avalanche energy, single pulse EAS 1.3 J Power dissipation Ptot 120 W -40 ...+175 C Continuous drain current 1) TC = 100 C, VGS = 4.5V ID = 12 A, RGS = 25 TC = 25 C Operating temperature 2) Tj Peak temperature ( single event ) Tjpeak Storage temperature Tstg 200 -55 ... +150 DIN humidity category, DIN 40 040 E IEC climatic category; DIN IEC 68-1 40/150/56 1current limited by bond wire 2Note: Thermal trip temperature of temperature sensor is below 175C Data Sheet 2 Rev.1.3, 2009-12-04 Speed TEMPFET BTS247Z Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics junction - case: RthJC - - 1.25 Thermal resistance @ min. footprint Rth(JA) - - 62 Thermal resistance @ 6 cm2 cooling area 1) Rth(JA) - 33 40 K/W Electrical Characteristics Symbol Parameter at Tj = 25C, unless otherwise specified Values Unit min. typ. max. 55 - - ID = 90 A 1.2 1.6 2 ID = 250 A - 1.65 - Static Characteristics Drain-source breakdown voltage V(BR)DSS V VGS = 0 V, ID = 0.25 mA VGS(th) Gate threshold voltage, VGS = VDS IDSS Zero gate voltage drain current A VDS = 50 V, VGS = 0 V, Tj = -40 C - - 0.1 VDS = 50 V, VGS = 0 V, Tj = 25 C - 0.1 1 VDS = 50 V, VGS = 0 V, Tj = 150 C - - 100 IGSS Gate-source leakage current nA VGS = 20 V, VDS = 0 V, Tj = 25 C - 10 100 VGS = 20 V, VDS = 0 V, Tj = 150 C - 20 100 m RDS(on) Drain-Source on-state resistance VGS = 4.5 V, ID = 12 A - 22 28 VGS = 10 V, ID = 12 A - 15 18 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for drain connection. PCB mounted vertical without blown air. Data Sheet 3 Rev.1.3, 2009-12-04 Speed TEMPFET BTS247Z Electrical Characteristics Parameter Symbol at Tj = 25C, unless otherwise specified Values Unit min. typ. max. Dynamic Characteristics Forward transconductance gfs 10 - - S VDS>2*ID *RDS(on)max , ID = 33 A Input capacitance Ciss - 1380 1730 pF Coss - 410 515 Crss - 230 290 td(on) - 15 25 tr - 30 45 td(off) - 30 45 tf - 20 30 Qg(th) - 2 3 Qg(5) - 35 55 Qg(total) - 60 90 V(plateau) - 4.5 - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, VGS = 4.5 V, ID = 45 A, RG = 3.6 Rise time VDD = 30 V, VGS = 4.5 V, ID = 45 A, RG = 3.6 Turn-off delay time VDD = 30 V, VGS = 4.5 V, ID = 45 A, RG = 3.6 Fall time VDD = 30 V, VGS = 4.5 V, ID = 45 A, RG = 3.6 Gate Charge Characteristics Gate charge at threshold nC VDD = 40 V, ID = 0.1 A, VGS = 0 to 1 V Gate charge at 5.0 V VDD = 40 V, ID = 45 A, V GS = 0 to 5 V Gate charge total VDD = 40 V, ID = 45 A, V GS = 0 to 10 V Gate plateau voltage V VDD = 40 V, ID = 45 A Data Sheet 4 Rev.1.3, 2009-12-04 Speed TEMPFET BTS247Z Electrical Characteristics Symbol Parameter at Tj = 25C, unless otherwise specified Values Unit min. typ. max. IS 33 - - IFM 180 - - VSD - 1.1 1.7 V trr - 75 115 ns Qrr - 0.15 0.25 C Reverse Diode Inverse diode continuous forward current A TC = 25 C Inverse diode direct current,pulsed TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = 90 A Reverse recovery time VR = 30 V, IF =IS, diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF =IS, diF/dt = 100 A/s Sensor Characteristics For temperature sensing, i.e. temperature protection, please consider application note "Temperature sense concept - Speed TEMPFET". For short circuit protection please consider application note "Short circuit behaviour of the Speed TEMPFET family". All application notes are available at http://www.infineon.com/tempfet/ VAK(on) Forward voltage V IAK(on) = 5 mA, Tj = -40...+150 C - 1.3 1.4 IAK(on) = 1.5 mA, Tj = 150 C - - 0.9 Sensor override - - 10 - - 5 - - 600 tP = 100 s, Tj = -40...+150 C IAK(on) Forward current mA Tj = -40...+150 C Sensor override tP = 100 s, Tj = -40...+150 C Data Sheet 5 Rev.1.3, 2009-12-04 Speed TEMPFET BTS247Z Electrical Characteristics Symbol Parameter at Tj = 25C, unless otherwise specified Values Unit min. typ. max. - - 4 A 100 - - s - - 150 Sensor Characteristics IAK(off) Temperature sensor leakage current Tj = 150 C treset Min. reset pulse duration 1) Tj = -40...+150 C, IAK(on) = 0.3 mA, VAK(Reset)<0.5V VAK Recovery time1)2) trecovery Tj = -40...+150 C, IAK(on) = 0.3 mA Characteristics IAK(hold) Holding current, VAK(off) = 5V mA Tj = 25 C 0.05 - 0.5 Tj = 150 C 0.05 - 0.3 TTS(on) 150 160 170 C toff 0.5 - 2.5 s VAK(reset) 0.5 - - V Thermal trip temperature VTS = 5V Turn-off time (Pin G+A and K+S connected) VTS = 5V, ITS(on) = 2 mA Reset voltage Tj = -40...+150C Sensor recovery behaviour: S ensor R E S E T V A K [V ] tre s e t 5 4 0 S ensor O N t re c o v e ry R eset OFF 1See diagram Sensor recovery behaviour 2Time after reset pulse until V AK reaches 4V again Data Sheet 6 Rev.1.3, 2009-12-04 Speed TEMPFET BTS247Z 1 Maximum allowable power dissipation 2 Drain current Ptot = f(TC) ID = f(TC ); VGS 4.5V 130 40 W A 110 100 30 ID Ptot 90 80 25 70 20 60 50 15 40 10 30 20 5 10 0 -40 0 40 80 C 120 0 0 180 20 40 60 80 100 120 140 C TC TC 3 Typ. transient thermal impedance 4 Transient thermal impedance ZthJA=f(tp ) @ 6 cm2 cooling area ZthJC = f (tp ) Parameter: D=tp /T parameter : D = tp /T 10 180 10 1 2 K/W K/W 10 0 D=0.5 Z thJC Z thJA D=0.5 10 1 0.2 0.2 10 -1 0.1 0.05 0.1 0.02 0.05 10 -2 0.01 10 0 0.02 0.01 10 -3 Single pulse Single pulse 10 -1 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 1 s 10 10 -4 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 10 3 tp Data Sheet s 10 2 tp 7 Rev.1.3, 2009-12-04 Speed TEMPFET BTS247Z 5 Safe operating area 6 Typ. output characteristic ID=f(VDS ); D=0.01; TC =25C; VGS =4.5V ID = f(VDS); Tj =25C Parameter: VGS 3 10 120 7V 10V A A Rdson=Vds/Id tp=10s 2 ID 80 ID 10 6V 100s 5V 60 4.5V 1ms 10 1 40 4V 10ms 3.5V 20 3V 10 0 0 10 10 1 V 10 0 0 2 1 V 2 4 VDS VDS 7 On-state resistance 8 On-state resistance RON = f(Tj ); ID=12A; VGS = 4.5V RON = f(Tj ); ID=12A; VGS = 10V 60 40 m m max max 45 40 RDS(on) RDS(on) 50 typ. 35 30 30 typ. 25 20 25 15 20 15 10 10 5 5 0 -50 -25 0 25 50 75 100 125 C 0 -50 175 Tj Data Sheet -25 0 25 50 75 100 125 C 175 Tj 8 Rev.1.3, 2009-12-04 Speed TEMPFET BTS247Z 9 Typ. transfer characteristics 10 Typ. input threshold voltage ID = f(VGS); VDS = 12V; Tj = 25C VGS(th) = f(Tj); VDS =VGS Parameter: ID 70 2.4 V A 2.0 ID VGS(th) 50 40 1.8 90mA 1.6 9mA 1.4 1.2 30 0.9mA 1.0 0.8 90A 20 0.6 0.4 10 0.2 0 0 1 2 V 3 0.0 -50 5 -25 0 25 50 100 125 C 75 VGS 175 Tj 11 Typ. capacitances 12 Typ. forward charcteristics of C = f(VDS); VGS =0 V, f=1 MHz reverse diode IF = f(VSD ) tp = 80s (spread); Parameter: Tj 10 1 10 2 A 150C nF 25C C IF 10 1 Ciss 10 0 10 0 Coss Crss 10 -1 0 4 8 12 16 20 24 28 32 V 10 -1 0.0 40 VDS Data Sheet 0.2 0.4 0.6 0.8 1.0 V 1.4 VSD 9 Rev.1.3, 2009-12-04 Speed TEMPFET BTS247Z 13 Typ. gate charge 14 Drain-source break down voltage VGS = f(QGate); ID puls = 45 A V(BR)DSS = f(Tj ) BTS 247 Z 66 V V V(BR)DSS 16 VGS 12 0,2 VDS max 10 0,8 VDS max 62 60 8 58 6 56 4 54 2 52 0 0 Data Sheet 10 20 30 40 50 60 70 80 50 -40 nC 100 QGate 0 40 80 120 C 180 Tj 10 Rev.1.3, 2009-12-04 Speed TEMPFET BTS247Z Package Outlines Package Outlines 9.9 0.2 A 9.5 0.2 4.4 1.3 +0.1 -0.02 B C 9.2 0.2 0.05 1) 10.2 0.3 8.6 0.3 3.7 -0.15 13 17.5 0.3 15.6 0.3 6.6 2.8 0.2 7.5 3.3 0.3 1 0...0.15 0.5 0.1 2.4 5 x 0.8 0.1 4 x 1.7 0.25 M A B C 4.5 0.3 8.4 0.3 1) Shear and punch direction no burrs this surface Back side, heatsink contour All metal surfaces tin plated, except area of cut. Figure 1 PG-TO220-5-3 4.4 9.9 +0.1 8.0 7.5 (1.3) B 0.05 6.5 6.6 1) 3.6 0.3 9.2 0.2 2.4 1.5 0.25 (14.1) 10.5 0.15 A 5x 1.3 -0.02 0...0.15 0.5 +0.15 5 +0.1 0.8 -0.03 4 x 1.7 0.1 +3 0.1 B 0.25 M A B 1) Shear and punch direction no burrs this surface. Back side, heatsink contour All metal surfaces tin plated, except area of cut. P-TO220-5-62-PO V01 Figure 2 Data Sheet PG-TO220-5-62 11 Rev.1.3, 2009-12-04 Speed TEMPFET BTS247Z Package Outlines 9.9 0.2 A 9.5 0.2 4.4 1.3 +0.1 -0.02 0.05 13.5 0.5 1) 9.2 0.2 B 3.7 -0.15 13 15.6 0.3 17.5 0.3 6.6 2.8 0.2 7.5 C 0...0.15 0.5 0.1 5 x 0.8 0.1 4 x 1.7 0.25 2.4 M A B C 1) Shear and punch direction no burrs this surface Back side, heatsink contour All metal surfaces tin plated, except area of cut. Figure 3 PG-TO220-5-43 Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Data Sheet 12 Dimensions in mm Rev.1.3, 2009-12-04 Speed TEMPFET BTS247Z Revision History 2 Revision History Revision Date Changes 1.3 2009-12-04 updated package drawing of PG-TO220-5-62 1.2 2009-07-31 removed 100ms and DC line in SOA diagram 1.1 2008-11-10 all pages: added new Infineon logo Initial version of RoHS-compliant derivate of the BTS247Z Page 1 and 12: added RoHS compliance statement and Green product feature Page 1, 11 and 12: Package changed to RoHS compliant version page 13: added Revision history page 14: update of disclaimer Data Sheet 13 Rev.1.3, 2009-12-04 Edition 2009-12-04 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. 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