© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C - 500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ- 500 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C - 40 A
IDM TC= 25°C, Pulse Width Limited by TJM - 120 A
IATC= 25°C - 40 A
EAS TC= 25°C 3.5 J
dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PDTC= 25°C 890 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Force (PLUS247) 20..120/4.5..27 N/lb.
Mounting Torque (TO-264) 1.13/10 Nm/lb.in.
Weight PLUS247 6 g
TO-264 10 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = - 250μA - 500 V
VGS(th) VDS = VGS, ID = - 1mA - 2.0 - 4.0 V
IGSS VGS = ±20V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS= 0V - 50 μA
TJ = 125°C - 250 μA
RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 230 mΩ
PolarPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTK40P50P
IXTX40P50P
VDSS = - 500V
ID25 = - 40A
RDS(on) ≤≤
≤≤
≤ 230mΩΩ
ΩΩ
Ω
Features
zInternational Standard Packages
zRugged PolarPTM Process
zAvalanche Rated
zFast Intrinsic Diode
zLow Package Inductance
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zHigh-Side Switches
zPush Pull Amplifiers
zDC Choppers
zAutomatic Test Equipment
zCurrent Regulators
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
GDS
TO-264 (IXTK)
PLUS247 (IXTX)
(TAB)
DS99935B(03/09)
IXTK40P50P
IXTX40P50P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = -10V, ID = 0.5 • ID25, Note 1 23 38 S
Ciss 11.5 nF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 1150 pF
Crss 93 pF
td(on) 37 ns
tr 59 ns
td(off) 90 ns
tf 34 ns
Qg(on) 205 nC
Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 55 nC
Qgd 75 nC
RthJC 0.14 °C/W
RthCS 0.15 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V - 40 A
ISM Repetitive, Pulse Width Limited by TJM - 160 A
VSD IF = - 20A, VGS = 0V, Note 1 - 3.0 V
trr 477 nS
QRM 14.5 μC
IRM - 61 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
IF = - 20A, -di/dt = -150A/μs
VR = -100V, VGS = 0V
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247TM (IXTX) Outline
TO-264 (IXTK) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
© 2009 IXYS CORPORATION, All Rights Reserved
Fi g . 1. Ou tp u t C h ar acter isti c s
@ 25ºC
-40
-35
-30
-25
-20
-15
-10
-5
0-9-8-7-6-5-4-3-2-10
V
DS
- Vo lt s
I
D
- A mpe re s
V
GS
= - 10V
- 7V
- 5
V
- 6
V
Fi g . 2. Exten d ed Ou tp u t C h ar acteri sti cs
@ 25º C
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0-30-27-24-21-18-15-12-9-6-30
V
DS
- Vo lt s
I
D
- Am peres
V
GS
= -10V
- 6
V
- 7
V
- 8
V
Fig. 3. Outp ut Characteristics
@ 125ºC
-40
-35
-30
-25
-20
-15
-10
-5
0-18-16-14-12-10-8-6-4-20
V
DS
- Volt s
I
D
- Am peres
V
GS
= -10V
- 7V
- 6V
- 5V
Fig. 4. R
DS(on)
Normalized to I
D
= - 20A vs.
Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- No rm a lize d
V
GS
= - 10V
I
D
= - 20A
I
D
= - 40A
Fig. 5. R
DS(on)
Normalized to I
D
= - 20A vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-90-80-70-60-50-40-30-20-100
I
D
- Amp eres
R
DS(on)
- N orma lized
V
GS
= -10V
T
J
= 25ºC
T
J
= 125ºC
Fig. 6. Maximum Drain Current vs.
Case Temper atur e
-45
-40
-35
-30
-25
-20
-15
-10
-5
0-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
I
D
- A mp ere s
IXTK40P50P
IXTX40P50P
IXTK40P50P
IXTX40P50P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Admittance
-70
-60
-50
-40
-30
-20
-10
0-6.5-6.0-5.5-5.0-4.5-4.0-3.5
V
GS
- Volts
I
D
- A mp ere s
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
-70-65-60-55-50-45-40-35-30-25-20-15-10-50
I
D
- Amp eres
g
f s
- Siemen s
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of
In t r i nsi c D io d e
-140
-120
-100
-80
-60
-40
-20
0-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.5
V
SD
- Volt s
I
S
- A mpe re s
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
00 20 40 60 80 100 120 140 160 180 200 220
Q
G
- NanoCoulombs
V
GS
- V o lts
V
DS
= - 250V
I
D
= - 20A
I
G
= -1mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
-40-35-30-25-20-15-10-50
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MH
z
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1.0
10.0
100.0
1,000.0
10 100 1000
V
DS
- Volts
I
D
- Am peres
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
-
-
----
-100ms
-
© 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: T_40P50P(B9) 03-06-08-A
IXTK40P50P
IXTX40P50P
Fig . 1 3. Maxi mum Transient Th er mal I mp ed a n ce
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
