FGD3040G2-F085C - ON SEMICONDUCTOR

April, 2019 − Rev. 1

1Publication Order Number:

FGX3040G2−F085C//D

FGD3040G2-F085C

FGB3040G2-F085C

EcoSPARK 2 Ignition IGBT

300 mJ, 400 V, N−Channel Ignition IGBT

Features

•SCIS Energy = 300 mJ at TJ = 25°C

•Logic Level Gate Drive

•AEC−Q101 Qualified and PPAP Capable

•These Devices are Pb−Free and are RoHS Compliant

Applications

•Automotive Ignition Coil Driver Circuits

•High Current Ignition System

•Coil on Plug Application

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Symbol Parameter Value Unit

BVCER Collector to Emitter Breakdown

Voltage (IC = 1 mA)

400 V

BVECS Emitter to Collector Voltage − Reverse

Battery Condition (IC = 10 mA)

28 V

ESCIS25 ISCIS = 14.2 A, L = 3.0 mHy,

RGE = 1 KW, TC = 25°C (Note 1)

300 mJ

ESCIS150 ISCIS = 10.8 A, L = 3.0 mHy,

RGE = 1 KW, TC = 150°C (Note 2)

170 mJ

IC25 Collector Current Continuous

at VGE = 5.0 V, TC = 25°C

41 A

IC110 Collector Current Continuous

at VGE = 5.0 V, TC = 110°C

25.6 A

VGEM Gate to Emitter Voltage Continuous ±10 V

PD Power Dissipation Total, TC = 25°C150 W

Power Dissipation Derating, TC > 25°C1W/°C

TJ, TSTG Operating Junction and Storage

Temperature

−55 to +175 °C

TLLead Temperature for Soldering

Purposes (1/8” from case for 10 s)

300 °C

TPKG Reflow Soldering according to

JESD020C

260 °C

ESD HBM−Electrostatic Discharge Voltage

at 100 pF, 1500 W

4kV

CDM−Electrostatic Discharge Voltage

at 1 W

2kV

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Self clamped inductive Switching Energy (ESCIS25) of 300 mJ is based on

the test conditions that is starting TJ = 25°C, L = 3 mHy, ISCIS = 14.2 A,

VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.

2. Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on

the test conditions that is starting TJ = 150°C, L = 3mHy, ISCIS = 10.8 A,

VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.

DPAK3

CASE 369AS

See detailed ordering and shipping information on page 2

of this data sheet.

ORDERING INFORMATION

www.onsemi.com

MARKING DIAGRAM

A = Assembly Location

Y = Year

WW = Work Week

XXXX = Device Code

G = Pb−Free Package

AYWW

XXX

XXXXXG

GATE

COLLECTOR

EMITTER

D2PAK−3

CASE 418AJ

FGD3040G2−F085C

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THERMAL RESISTANCE RATINGS

Characteristic Symbol Max Units

Junction−to−Case – Steady State (Drain) RqJC 1°C/W

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Symbol Parameter Test Conditions Min Typ. Max. Units

OFF CHARACTERISTICS

BVCER Collector to Emitter Breakdown

Voltage

ICE = 2 mA, VGE = 0 V,

RGE = 1 kW,

TJ = −40 to 150°C

370 400 430 V

BVCES Collector to Emitter Breakdown

Voltage

ICE = 10 mA, VGE = 0 V,

RGE = 0,

TJ = −40 to 150°C

390 420 450 V

BVECS Emitter to Collector Breakdown

Voltage

ICE = −75 mA, VGE = 0 V,

TJ = 25°C

28 − − V

BVGES Gate to Emitter Breakdown Voltage IGES = ±2 mA ±12 ±14 −V

ICER Collector to Emitter Leakage Current VCE = 175 V

RGE = 1 kW

TJ = 25°C− − 25 mA

TJ = 150°C− − 1 mA

IECS Emitter to Collector Leakage Current VEC = 24 V TJ = 25°C− − 1mA

TJ = 150°C− − 40

R1Series Gate Resistance −120 −W

R2Gate to Emitter Resistance 10K −30K W

ON CHARACTERISTICS

VCE(SAT) Collector to Emitter Saturation

Voltage

ICE = 6 A, VGE = 4 V, TJ = 25°C−1.15 1.25 V

VCE(SAT) Collector to Emitter Saturation

Voltage

ICE = 10 A, VGE = 4.5 V, TJ = 150°C−1.35 1.50 V

VCE(SAT) Collector to Emitter Saturation

Voltage

ICE = 15 A, VGE = 5 V, TJ = 150°C−1.68 1.85 V

DYNAMIC CHARACTERISTICS

QG(ON) Gate Charge ICE = 10 A, VCE = 12 V, VGE = 5 V −21 −nC

VGE(TH) Gate to Emitter Threshold Voltage ICE = 1 mA

VCE = VGE

TJ = 25°C 1.3 1.5 2.2 V

TJ = 150°C 0.75 1.2 1.8

VGEP Gate to Emitter Plateau Voltage VCE = 12 V, ICE = 10 A −2.8 −V

SWITCHING CHARACTERISTICS

td(ON)R Current Turn−On Delay

Time−Resistive

VCE = 14 V, RL = 1 W,

VGE = 5 V, RG = 470 W,

TJ = 25°C

−0.9 4 ms

trR Current Rise Time−Resistive −1.9 7

td(OFF)L Current Turn−Off Delay

Time−Inductive

VCE = 300 V, L = 1 mH,

VGE = 5 V, RG = 470 W,

ICE = 6.5 A, TJ = 25°C

−4.8 10

tfL Current Fall Time−Inductive −2.0 15

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

PACKAGE MARKING AND ORDERING INFORMATION

Device Package Shipping†

FGD3040G2−F085C DPAK

(Pb−Free)

2500 Units / Tape & Reel

FGB3040G2−F085C D2PAK

(Pb−Free)

800 Units / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

FGD3040G2−F085C

www.onsemi.com

TYPICAL CHARACTERISTICS

Figure 1. Self Clamped Inductive Switching

Current vs. Time in Clamp

Figure 2. Self Clamped Inductive

Switching Current vs. Inductance

Figure 3. Collector to Emitter On−State Voltage

vs. Junction Temperature

Figure 4. Collector to Emitter On−State Voltage

vs. Junction Temperature

Figure 5. Collector to Emitter On−State Voltage

vs. Collector Current

Figure 6. Collector to Emitter On−State Voltage

vs. Collector Current

FGD3040G2−F085C

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TYPICAL CHARACTERISTICS (continued)

Figure 7. Collector to Emitter On−State Voltage

vs. Collector Current

Figure 8. Transfer Characteristics

Figure 9. DC Collector Current vs. Case

Temperature

Figure 10. Gate Charge

Figure 11. Threshold Voltage vs. Junction

Temperature

Figure 12. Leakage Current vs. Junction

Temperature

FGD3040G2−F085C

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Figure 13. Switching Time vs. Junction Temperature Figure 14. Capacitance vs. Collector to Emitter

Figure 15. Break Down Voltage vs. Series Resistance

TYPICAL CHARACTERISTICS (continued)

Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case

FGD3040G2−F085C

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Figure 17. Inductive Switching Test Circuit Figure 18. tON and tOFF Switching Test Circuit

TEST CIRCUIT AND WAVEFORMS

Figure 19. Energy Test Circuit Figure 20. Energy Waveforms

FGD3040G2−F085C

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PACKAGE DIMENSIONS

DPAK3 (TO−252 3 LD)

CASE 369AS

ISSUE O

FGD3040G2−F085C

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PACKAGE DIMENSIONS

PAK−3 (TO−263, 3−LEAD)

CASE 418AJ

ISSUE C

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

D0.330 0.380 8.38 9.65

E0.380 0.420 9.65 10.67

A0.160 0.190 4.06 4.83

b0.020 0.039 0.51 0.99

c2 0.045 0.065 1.14 1.65

e0.100 BSC 2.54 BSC

A1 0.000 0.010 0.00 0.25

c0.012 0.029 0.30 0.74

L0.070 0.110 1.78 2.79

H0.575 0.625 14.60 15.88

L2 −−−− 0.070 −−−− 1.78

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. CHAMFER OPTIONAL

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH. MOLD FLASH SHALL NOT EXCEED 0.005

PER SIDE. THESE DIMENSIONS ARE MEASURED

AT THE OUTERMOST EXTREMES OF THE PLAS-

TIC BODY AT DATUM H.

5. THERMAL PAD CONTOUR IS OPTIONAL WITHIN

DIMENSIONS E, L1, D1 AND E1.

E1 0.245 −−−− 6.22 −−−−

L1 −−−− 0.066 −−−− 1.68

D1 0.260 −−−− 6.60 −−−−

L3 0.010 BSC 0.25 BSC

M−88−88°° °°

A1 B

MDETAIL C

SEATING

PLANE

0.10 B

BSEATING

PLANE

DETAIL C

VIEW A−A

SIDE VIEW

TOP VIEW

VIEW A−A

OPTIONAL CONSTRUCTIONS

GAUGE

PLANE

NOTE 3

0.10 B

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

RECOMMENDED

0.366

0.100

DIMENSIONS: INCHES

PITCH

0.653

0.063

0.436

0.169

SOLDERING FOOTPRINT*

FGD3040G2−F085C

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Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

FGX3040G2−F085C/D

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