TO -22 0 F BYC8X-600P Hyperfast power diode 3 August 2015 Product data sheet 1. General description Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package. 2. Features and benefits * * * * * * Fast switching Isolated plastic package Low leakage current Low reverse recovery current Low thermal resistance Reduces switching losses in associated MOSFET 3. Applications * * Continuous Current Mode (CCM) Power Factor Correction (PFC) Half-bridge/full-bridge switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter VRRM repetitive peak reverse voltage IF(AV) average forward current Conditions Min Typ Max Unit - - 600 V - - 8 A - - 16 A - - 91 A - - 100 A IF = 8 A; Tj = 25 C; Fig. 6 - - 3.4 V IF = 8 A; Tj = 125 C; Fig. 6 - 1.5 1.9 V IF = 8 A; Tj = 150 C - 1.4 - V = 0.5 ; Th 75 C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3 IFRM repetitive peak forward = 0.5 ; tp = 25 s; Th 75 C; squarecurrent wave pulse IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 C; sine-wave pulse; Fig. 4 tp = 8.3 ms; Tj(init) = 25 C; sine-wave pulse; Fig. 4 Static characteristics VF forward voltage Scan or click this QR code to view the latest information for this product BYC8X-600P NXP Semiconductors Hyperfast power diode Symbol Parameter Conditions Min Typ Max Unit IF = 1 A; VR = 30 V; dIF/dt = 200 A/s; - 12 18 ns - 19 - ns Dynamic characteristics trr reverse recovery time Tj = 25 C; Fig. 7 IF = 8 A; VR = 400 V; dIF/dt = 500 A/s; Tj = 25 C; Fig. 7 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K Simplified outline cathode Graphic symbol K mb A 001aaa020 2 A anode mb n.c. mounting base; isolated 1 2 TO-220F (SOD113) 6. Ordering information Table 3. Ordering information Type number BYC8X-600P Package Name Description Version TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-lead TO-220 "full pack" SOD113 7. Marking Table 4. Marking codes Type number Marking code BYC8X-600P BYC8X-600P BYC8X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 3 August 2015 (c) NXP Semiconductors N.V. 2015. All rights reserved 2 / 11 BYC8X-600P NXP Semiconductors Hyperfast power diode 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VRRM Conditions Min Max Unit repetitive peak reverse voltage - 600 V VRWM crest working reverse voltage - 600 V VR reverse voltage DC - 600 V IF(AV) average forward current = 0.5 ; Th 75 C; square-wave - 8 A - 16 A - 91 A - 100 A pulse; Fig. 1; Fig. 2; Fig. 3 IFRM repetitive peak forward current = 0.5 ; tp = 25 s; Th 75 C; squarewave pulse IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 C; sine-wave pulse; Fig. 4 tp = 8.3 ms; Tj(init) = 25 C; sine-wave pulse; Fig. 4 Tstg storage temperature -65 175 C Tj junction temperature - 175 C 003aaj898 24 Ptot (W) 003aaj899 20 =1 Ptot (W) 16 0.5 a = 1.57 2.2 16 0.2 1.9 2.8 12 4.0 0.1 8 8 4 0 Fig. 1. 0 4 8 IF(AV) (A) 0 12 Forward power dissipation as a function of average forward current; square waveform; maximum values BYC8X-600P Product data sheet Fig. 2. 0 4 6 IF(AV) (A) 8 Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values All information provided in this document is subject to legal disclaimers. 3 August 2015 2 (c) NXP Semiconductors N.V. 2015. All rights reserved 3 / 11 BYC8X-600P NXP Semiconductors Hyperfast power diode 003aaj901 12 IF(AV) (A) Fig. 3. P IFSM (A) 75 C 8 103 4 102 0 -50 0 50 100 Product data sheet 10 10-5 150 200 Th (C) Average forward current as a function of heatsink temperature; maximum values BYC8X-600P 003aaj902 104 Fig. 4. 10-4 10-3 tp (s) t 10-2 Non-repetitive peak forward current as a function of pulse width; square waveform; maximum values All information provided in this document is subject to legal disclaimers. 3 August 2015 tp (c) NXP Semiconductors N.V. 2015. All rights reserved 4 / 11 BYC8X-600P NXP Semiconductors Hyperfast power diode 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-h) thermal resistance from junction to heatsink without heatsink compound - - 7.2 K/W with heatsink compound; Fig. 5 - - 5.5 K/W - 60 - K/W Rth(j-a) thermal resistance from junction to ambient free air 001aaf257 10 Zth(j-h) (K/W) 1 10- 1 P = tp T 10- 2 tp 10- 3 10- 6 Fig. 5. 10- 5 10- 4 10- 3 10- 2 t T 10- 1 1 tp (s) 10 Transient thermal impedance from junction to heatsink as a function of pulse width 10. Isolation characteristics Table 7. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage 50 Hz f 60 Hz; RH 65 %; from all pins to external heatsink; sinusoidal waveform; clean and dust free - - 2500 V Cisol isolation capacitance from cathode to external heatsink - 10 - pF BYC8X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 3 August 2015 (c) NXP Semiconductors N.V. 2015. All rights reserved 5 / 11 BYC8X-600P NXP Semiconductors Hyperfast power diode 11. Characteristics Table 8. Characteristics Symbol Parameter Conditions Min Typ Max Unit IF = 8 A; Tj = 25 C; Fig. 6 - - 3.4 V IF = 8 A; Tj = 125 C; Fig. 6 - 1.5 1.9 V IF = 8 A; Tj = 150 C - 1.4 - V VR = 600 V; Tj = 25 C - - 20 A VR = 600 V; Tj = 125 C - - 200 A IF = 8 A; VR = 200 V; dIF/dt = 200 A/s; - 17 - nC - 90 - nC - 12 18 ns - 19 - ns - - 2.2 A - - 6 A Static characteristics VF IR forward voltage reverse current Dynamic characteristics Qr recovered charge Tj = 25 C; Fig. 7 IF = 8 A; VR = 200 V; dIF/dt = 200 A/s; Tj = 125 C; Fig. 7 trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 200 A/s; Tj = 25 C; Fig. 7 IF = 8 A; VR = 400 V; dIF/dt = 500 A/s; Tj = 25 C; Fig. 7 IRM peak reverse recovery current IF = 8 A; VR = 200 V; dIF/dt = 200 A/s; Tj = 25 C; Fig. 7 IF = 8 A; VR = 200 V; dIF/dt = 200 A/s; Tj = 125 C; Fig. 7 BYC8X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 3 August 2015 (c) NXP Semiconductors N.V. 2015. All rights reserved 6 / 11 BYC8X-600P NXP Semiconductors Hyperfast power diode 003aaj903 16 IF IF (A) dlF dt 12 trr 8 (1) (2) time (3) 25 % Qr 4 IR 0 Fig. 6. 100 % IRM 003aac562 0 1 2 3 VF (V) 4 Fig. 7. Reverse recovery definitions; ramp recovery Forward current as a function of forward voltage BYC8X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 3 August 2015 (c) NXP Semiconductors N.V. 2015. All rights reserved 7 / 11 BYC8X-600P NXP Semiconductors Hyperfast power diode 12. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-lead TO-220 full pack' SOD113 A A1 E z(2) P q m T(4) D HE L2 j(3) L1(1) k(3) Q L 1 b1 2 b w c e 0 5 10 mm scale Dimensions (mm are the original dimensions) Unit mm max nom min A A1 b b1 c D E e 4.6 2.9 0.9 1.1 0.7 15.8 10.3 4.0 2.5 0.7 0.9 0.4 15.2 9.7 HE max 5.08 19.0 L2 L1(1) max j(3) k(3) L 2.7 0.6 14.4 3.3 1.7 0.4 13.5 2.8 0.5 m P Q 6.5 3.2 2.6 6.3 3.0 2.3 Notes 1. Terminals are uncontrolled within zone L1. 2. z is depth of T. 3. Dot lines area designs may vary. 4. Eject pin mark is for reference only. Outline version SOD113 Fig. 8. T(4) w z(2) 2.6 2.55 0.4 0.8 sod113_po References IEC q JEDEC JEITA European projection Issue date 07-06-08 15-08-28 2-lead TO-220F Package outline TO-220F (SOD113) BYC8X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 3 August 2015 (c) NXP Semiconductors N.V. 2015. All rights reserved 8 / 11 BYC8X-600P NXP Semiconductors Hyperfast power diode In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 13. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................5 10 Isolation characteristics ........................................5 11 Characteristics ....................................................... 6 12 Package outline ..................................................... 8 13 13.1 13.2 13.3 13.4 Legal information ...................................................9 Data sheet status ................................................. 9 Definitions .............................................................9 Disclaimers ...........................................................9 Trademarks ........................................................ 10 (c) NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 3 August 2015 BYC8X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 3 August 2015 (c) NXP Semiconductors N.V. 2015. All rights reserved 11 / 11 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: NXP: BYC8X-600P,127