BYC8X-600P,127 - NXP Semiconductors

BYC8X-600P

Hyperfast power diode

3 August 2015 Product data sheet

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1. General description

Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package.

2. Features and benefits

•Fast switching

•Isolated plastic package

•Low leakage current

•Low reverse recovery current

•Low thermal resistance

•Reduces switching losses in associated MOSFET

3. Applications

•Continuous Current Mode (CCM) Power Factor Correction (PFC)

•Half-bridge/full-bridge switched-mode power supplies

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VRRM repetitive peak reverse

voltage

- - 600 V

IF(AV) average forward

current

δ = 0.5 ; Th ≤ 75 °C; square-wave

pulse; Fig. 1; Fig. 2; Fig. 3

- - 8 A

IFRM repetitive peak forward

current

δ = 0.5 ; tp = 25 µs; Th ≤ 75 °C; square-

wave pulse

- - 16 A

tp = 10 ms; Tj(init) = 25 °C; sine-wave

pulse; Fig. 4

- - 91 AIFSM non-repetitive peak

forward current

tp = 8.3 ms; Tj(init) = 25 °C; sine-wave

pulse; Fig. 4

- - 100 A

Static characteristics

IF = 8 A; Tj = 25 °C; Fig. 6 - - 3.4 V

IF = 8 A; Tj = 125 °C; Fig. 6 - 1.5 1.9 V

VFforward voltage

IF = 8 A; Tj = 150 °C - 1.4 - V

NXP Semiconductors BYC8X-600P

Hyperfast power diode

Product data sheet 3 August 2015 2 / 11

Symbol Parameter Conditions Min Typ Max Unit

Dynamic characteristics

IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs;

Tj = 25 °C; Fig. 7

- 12 18 nstrr reverse recovery time

IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs;

Tj = 25 °C; Fig. 7

- 19 - ns

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 K cathode

2 A anode

mb n.c. mounting base; isolated

TO-220F (SOD113)

001aaa020

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

BYC8X-600P TO-220F plastic single-ended package; isolated heatsink

mounted; 1 mounting hole; 2-lead TO-220 "full pack"

SOD113

7. Marking

Table 4. Marking codes

Type number Marking code

BYC8X-600P BYC8X-600P

NXP Semiconductors BYC8X-600P

Hyperfast power diode

Product data sheet 3 August 2015 3 / 11

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VRRM repetitive peak reverse voltage - 600 V

VRWM crest working reverse voltage - 600 V

VRreverse voltage DC - 600 V

IF(AV) average forward current δ = 0.5 ; Th ≤ 75 °C; square-wave

pulse; Fig. 1; Fig. 2; Fig. 3

- 8 A

IFRM repetitive peak forward current δ = 0.5 ; tp = 25 µs; Th ≤ 75 °C; square-

wave pulse

- 16 A

tp = 10 ms; Tj(init) = 25 °C; sine-wave

pulse; Fig. 4

- 91 AIFSM non-repetitive peak forward

current

tp = 8.3 ms; Tj(init) = 25 °C; sine-wave

pulse; Fig. 4

- 100 A

Tstg storage temperature -65 175 °C

Tjjunction temperature - 175 °C

003aaj898

IF(AV) (A)

0 1284

Ptot

(W)

δ = 1

0.5

0.2

0.1

Fig. 1. Forward power dissipation as a function of

average forward current; square waveform;

maximum values

IF(AV) (A)

0 862 4

003aaj899

Ptot

(W)

a = 1.57

1.9

2.2

2.8

4.0

Fig. 2. Forward power dissipation as a function of

average forward current; sinusoidal waveform;

maximum values

NXP Semiconductors BYC8X-600P

Hyperfast power diode

Product data sheet 3 August 2015 4 / 11

Th (°C)

-50 20015050 1000

003aaj901

IF(AV)

(A)

75 °C

Fig. 3. Average forward current as a function of

heatsink temperature; maximum values

tp (s)

10-5 10-2

10-3

10-4

003aaj902

103

102

104

IFSM

(A)

Fig. 4. Non-repetitive peak forward current as a

function of pulse width; square waveform;

maximum values

NXP Semiconductors BYC8X-600P

Hyperfast power diode

Product data sheet 3 August 2015 5 / 11

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

without heatsink compound - - 7.2 K/WRth(j-h) thermal resistance

from junction to

heatsink with heatsink compound; Fig. 5 - - 5.5 K/W

Rth(j-a) thermal resistance

from junction to

ambient free air

- 60 - K/W

001aaf257

10- 2

10- 1

Zth(j-h)

(K/W)

10- 3

tp(s)

10- 6 10110- 1

10- 5 10- 3 10- 2

10- 4

δ =

Fig. 5. Transient thermal impedance from junction to heatsink as a function of pulse width

10. Isolation characteristics

Table 7. Isolation characteristics

Symbol Parameter Conditions Min Typ Max Unit

Visol(RMS) RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all

pins to external heatsink; sinusoidal

waveform; clean and dust free

- - 2500 V

Cisol isolation capacitance from cathode to external heatsink - 10 - pF

NXP Semiconductors BYC8X-600P

Hyperfast power diode

Product data sheet 3 August 2015 6 / 11

11. Characteristics

Table 8. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

IF = 8 A; Tj = 25 °C; Fig. 6 - - 3.4 V

IF = 8 A; Tj = 125 °C; Fig. 6 - 1.5 1.9 V

VFforward voltage

IF = 8 A; Tj = 150 °C - 1.4 - V

VR = 600 V; Tj = 25 °C - - 20 µAIRreverse current

VR = 600 V; Tj = 125 °C - - 200 µA

Dynamic characteristics

IF = 8 A; VR = 200 V; dIF/dt = 200 A/µs;

Tj = 25 °C; Fig. 7

- 17 - nCQrrecovered charge

IF = 8 A; VR = 200 V; dIF/dt = 200 A/µs;

Tj = 125 °C; Fig. 7

- 90 - nC

IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs;

Tj = 25 °C; Fig. 7

- 12 18 nstrr reverse recovery time

IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs;

Tj = 25 °C; Fig. 7

- 19 - ns

IF = 8 A; VR = 200 V; dIF/dt = 200 A/µs;

Tj = 25 °C; Fig. 7

- - 2.2 AIRM peak reverse recovery

current

IF = 8 A; VR = 200 V; dIF/dt = 200 A/µs;

Tj = 125 °C; Fig. 7

- - 6 A

NXP Semiconductors BYC8X-600P

Hyperfast power diode

Product data sheet 3 August 2015 7 / 11

VF (V)

0 431 2

003aaj903

(A)

(1) (2) (3)

Fig. 6. Forward current as a function of forward

voltage

003aac562

trr

time

100 %

25 %

dlF

IRIRM

Fig. 7. Reverse recovery definitions; ramp recovery

NXP Semiconductors BYC8X-600P

Hyperfast power diode

Product data sheet 3 August 2015 8 / 11

12. Package outline

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

SOD113 2-lead TO-220F

sod113_po

07-06-08

15-08-28

Unit

max

nom

min

4.6 2.9 1.1 0.7 15.8 10.3

19.0

3.2 2.6

Dimensions (mm are the original dimensions)

Notes

1. Terminals are uncontrolled within zone L1.

2. z is depth of T.

3. Dot lines area designs may vary.

4. Eject pin mark is for reference only.

Plastic single-ended package; isolated heatsink mounted;

1 mounting hole; 2-lead TO-220 `full pack' SOD113

A1b

0.9

b1c D E

2.55 0.4 0.8

T(4) w z(2)

5.08

max j(3) k(3) L L1(1) L2

max m

6.5

0.5

P Q

2.6

1.7 13.50.4 2.84.0 2.5 0.9 0.4 15.2 9.7 3.0 2.30.7 6.3

2.7 14.40.6 3.3

0 5 10 mm

scale

k(3)

j(3)

z(2)

1 2

T(4)

L1(1)

Fig. 8. Package outline TO-220F (SOD113)

NXP Semiconductors BYC8X-600P

Hyperfast power diode

Product data sheet 3 August 2015 9 / 11

13. Legal information

13.1 Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

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NXP Semiconductors BYC8X-600P

Hyperfast power diode

Product data sheet 3 August 2015 10 / 11

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Corporation.

NXP Semiconductors BYC8X-600P

Hyperfast power diode

Product data sheet 3 August 2015 11 / 11

14. Contents

1 General description ............................................... 1

2 Features and benefits ............................................1

3 Applications ........................................................... 1

4 Quick reference data ............................................. 1

5 Pinning information ............................................... 2

6 Ordering information .............................................2

7 Marking ................................................................... 2

8 Limiting values .......................................................3

9 Thermal characteristics .........................................5

10 Isolation characteristics ........................................5

11 Characteristics .......................................................6

12 Package outline ..................................................... 8

13 Legal information ...................................................9

13.1 Data sheet status ................................................. 9

13.2 Definitions .............................................................9

13.3 Disclaimers ........................................................... 9

13.4 Trademarks ........................................................ 10

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Date of release: 3 August 2015

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