1.9
2. 80¡ À0. 05
1. 60¡ À0. 05
0.35
2.92¡À0.05
0.95¡À
0.0251.02
JI ANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate Transistors
MMBTA44 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 0.35 W (Tamb=25℃)
Collector current
ICM: 0.2 A
Collector-base voltage
V(BR)CBO: 400 V
Operating and storage junction temperature range
TJ, T stg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown vol tage V(BR)CBO Ic= 100µA, IE=0 400 V
Collector-emitter breakdown voltage V(BR)CEO I
C= 1mA , IB=0 400 V
E mitte r-b ase break dow n volt age V(BR)EBO I
E=100µA, IC=0 5 V
Collector cut-off current ICBO V
CB=400V, IE=0 0.1 µA
Collector cut-off current ICEO V
CE=400V 5 µA
Emi tter cut -o ff curr e n t IEBO V
EB= 4V, IC=0 0.1 µA
HFE(1) V
CE=10V, IC=10 mA 80 300
HFE(2) V
CE=10V, IC=1mA 70
DC current gain
HFE(3) V
CE=10V, IC=100 mA 60
VCE(sat) IC=10 mA, IB=1mA 0.2 V
Collector-emitter saturat i on voltage VCE(sat) IC=50 mA, IB=5mA 0.3 V
Base-emitter sat a ration voltage VBE(sat) IC=10 mA, IB= 1 mA 0.75 V
Transition frequency f T
VCE=20V, IC=10 mA
f =30MHz
50 MHz
MARKING 3D
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
