SiHG17N60D
www.vishay.com Vishay Siliconix
S12-0685-Rev. A, 02-Apr-12 2Document Number: 91496
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
a. Repetitive rating; pulse width limited by maximum junction temperature.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA -62
°C/W
Maximum Junction-to-Case (Drain) RthJC -0.45
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 600 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.7 - V/°C
Gate-Source Threshold Voltage (N) VGS(th) VDS = VGS, ID = 250 μA 3 - 5 V
Gate-Source Leakage IGSS V
GS = ± 30 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 600 V, VGS = 0 V - - 1 μA
VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 100
Drain-Source On-State Resistance RDS(on) V
GS = 10 V ID = 8 A - 0.275 0.340
Forward Transconductanceagfs VDS = 50 V, ID = 8 A - 6.2 - S
Dynamic
Input Capacitance Ciss VGS = 0 V,
VDS = 100 V,
f = 1 MHz
- 1780 -
pFOutput Capacitance Coss - 140 -
Reverse Transfer Capacitance Crss -15-
Total Gate Charge Qg
VGS = 10 V ID = 8 A, VDS = 480 V
-4590
nC Gate-Source Charge Qgs -14-
Gate-Drain Charge Qgd -22-
Turn-On Delay Time td(on)
VDD = 300 V, ID = 8 A
Rg = 9.1 , VGS = 10 V
-2245
ns
Rise Time tr -5685
Turn-Off Delay Time td(off) -3775
Fall Time tf -3060
Internal Gate Resistance Rg f = 1 MHz, open drain - 1.6 -
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--17
A
Pulsed Diode Forward Current ISM --48
Body Diode Voltage VSD TJ = 25 °C, IS = 8 A, VGS = 0 V - - 1.5 V
Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = IS,
dI/dt = 100 A/μs, VR = 20 V
- 633 950 ns
Body Diode Reverse Recovery Charge Qrr - 7 15 μC
Reverse Recovery Current IRRM -2142A