SEMITOP®2
IGBT Module
SK 60GM123
Preliminary Data
Features
 
  
   

   
  
   !
"    


Typical Applications*
#    
$%
#   
&'#
GM
Absolute Maximum Ratings () *+ ,-   
Symbol Conditions Values Units
IGBT
./# (0) *+ , 1*22 .
$(0) 1*+ , () *+ , 32 4
() 52 , 62 4
$78 $78)*$ 122 4
.9/# : *2 .
 . ) 322 .; .9/ < *2 .;
./# = 1*22 .
(0) 1*+ , 12 >
Inverse Diode
$?(0) 1+2 , () *+ , 32 4
() 52 , 62 4
$?78 $?78)*$? 122 4
Module
$78# 4
(%0 @62 AAA B1+2 ,
( @62 AAA B1*+ ,
. 4- 1 A *+22 .
Characteristics () *+ ,-   
Symbol Conditions min. typ. max. Units
IGBT
.9/ .9/ ) ./- $) * 4 6-+ +-+ 3-+ .
$/# .9/ ) .- ./ ) ./# (0) , 4
./2 (0) , .
/ .9/ ) . (0) , C
./ $ ) +2 4- .9/ ) 1+ . (0) *+,%A *-+ D .
(0) 1*+,%A D-1 D-E .
 D-D ?
 ./ ) *+- .9/ ) 2 . ) 1 8F ?
 ?
 62 
79 ) *D C . ) 322. 6+ 
/ $) +24 E G
 79 ) *D C (0) 1*+ , D22 
.9/):1+. 6+ 
/ +-* G
70@  $9( 2-3 HIJ
SK 60GM123
1 27-06-2007 DIL © by SEMIKRON
http://store.iiic.cc/
SEMITOP®2
IGBT Module
SK 60GM123
Preliminary Data
Features
 
  
   

   
  
   !
"    


Typical Applications*
#    
$%
#   
&'#
GM
Characteristics
Symbol Conditions min. typ. max. Units
Inverse Diode
.?) ./ $? ) +2 4; .9/ ) 2 . (0) *+ ,%A * *-+ .
(0) 1*+ ,%A 1-5 .
.?2 (0) 1*+ , 1 1-* .
?(0) 1*+ , 13 ** C
$778 $?) D2 4 (0) 1*+ , 13 4
K I ) 622 4I> +-6 >
/ .) 322. *-6 G
70@    2-E HIJ
8  L 81 * M
*1
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
SK 60GM123
2 27-06-2007 DIL © by SEMIKRON
http://store.iiic.cc/
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
SK 60GM123
3 27-06-2007 DIL © by SEMIKRON
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Fig. 7 Typ. switching times vs. ICFig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
SK 60GM123
4 27-06-2007 DIL © by SEMIKRON
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UL recognized file no. E 63 532
 (D* #  -   '-       N *
 (D+ 98
SK 60GM123
5 27-06-2007 DIL © by SEMIKRON
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