REVISIONS DOC. NO. SPCFOOS * Effective: 7/8/02 * DCP No: 1398 WENT, WRETEa Ne SOTO ae PuSRSSESN mult I c om WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC DCP #| REV DESCRIPTION DRAWN| DATE |CHECKD| DATE |APPRVD| DATE p , 1885 A RELEASED EO | 02/03/06} HO | 2/6/06 | JWM | 2/6/06 SPCFOO5.DWG RoHS PNP B Compliant F aa . . a: Dim} Min | Max ~ UF YY M Description: Silicon TO126, PNP Power Transistor for use in power amplifier a |10.80111.05 | \ and switching excellent safe area limits. : - Absolute Maximum Ratings: Bi} 7.49) 7.75 cj Q 7 CollectorBase Voltage, Vogo = 80V C | 2.41 | 2.67 it CollectorEmitter Voltage, Verg = 80V D | 0.51] 0.66 VI EmitterBase Voltage, Vegg = 5V F | 2.92| 3.18 VI A Continuous Collector Current, Ig = 4A G | 2.31| 2.46 VI Base Current = 1A ; H | 1.271 2.41 N Total Device Dissipation (Ie = +25C), Pp = 40W 1 | 0.381 0.64 ' | Derate above 25C = 320mW/*C K 1 15.11116.64 Operating Junction Temperature Range, Tj) = 65 to +150C m|.3 TYP H Storage Temperature Range, T,. = 65 to +150C stg Q | 3.76| 4.01 Py Electrical Characteristics: (Ty = +25C unless otherwise specified) R ae = Ss . . V Parameter | Symbol Test Conditions [Min|Max | Unit | U | 3.68| 3.94 OFF Characteristics V | 1.02] = K CollectorEmitter Breakdown Voltage Viar)cEo Ig = 100mA, Ip = 0, (Note 1) 80; | V STYLE 1 Collector Cut-Off Current Icgo Vee = 8OV, Tp = O 1 mA PIN 1. EMITTER Collector Cut-Off Current lonx Vee = 80V. Vegcofy = 1-5V | 0.1] mA 2. COLLECTOR lpo ||Yog = -B0V, Ip = O |0.1] mA 3. BASE Ly Ut : Emitter Cut-Off Current Imo Veg = BV, Ig = O -~| 14] ma a D Jae ON Characteristics 3 COLLECTOR G DC Current Gain (Note 1) hee Vee = 2V, Ip = 1.5A 20} 80] tt Vee = 2V, Ip = 4A 7) -| - ce ic 2 BASE CollectorEmitter Saturation Voltage V Ig = 1.5A, Ip = .15mA | 0.6) V (Note 1) CE(sat) Ic = 4A, Ip = 1A -|1.4] v BaseEmitter On Voltage (Note 1) Vee(on) To = 1.5A, Vop = 2V 1.2) V Small-Signal Characteristics 1 EMITTER |Current GainBandwidth Product | fr [Vee = 10V, Ig = 1A, f = 1MHz | 2 | | MHz| Note 1. Pulse Test: Pulse Width 300us, Duty Cycle = 2%. DISCLAIMER: TOLERANCES: DRAWN BY: DATE: DRAWING TITLE: ALL STATEMENTS AND TECHNICAL INFORMATION CONTAINED EKLAS ODISH 02/03/06 Transistor, Bipolar, Plastic, TO-126, PNP HEREIN ARE BASED UPON INFORMATION AND/OR TESTS WE UNLESS OTHERWISE BELIEVE TO BE ACCURATE AND RELIABLE. SINCE SPECIFIED, CHECKED BY: DATE: SIZE] DWG. NO. ELECTRONIC FILE REV CONDITIONS OF USE ARE BEYOND OUR CONTROL, THE USER SHALL DETERMINE THE SUNABILIY OF THE PRobucT | DIMENSIONS ARE HISHAM ODISH 2/6/06 | A 2N5195 01H1379.DWG | A FOR THE INTENDED USE AND ASSUME ALL RISK AND FOR REFERENCE APPROVED BY: DATE: LIABILITY WHATSOEVER IN CONNECTION THEREWITH. PURPOSES ONLY. ON . MILLIMETER j JEFF MCVICKER 2/6/06 | SCALE: NTS U.O.M.: MILLIMETERS SHEET: 1 OF 1