GaAs INFRARED EMITTING DIODE DPTOELECTRONICS CQX15, CQX17 \CKAGE DIMENSIONS SEATING The CQX15/17 are 940nm LEDs in wide angle, TO-46 PLANE | packages. Acar t $T1331 Good optical to mechanical alignment SYMBOL |__INCHES __| MILLIMETERS . MIN. | MAX] MIN. | MAX. Mechanically and wavelength matched to TO-18 A 155 3.93 phototransistor b 016 | 021 | 407 [ 533 od | 209 | 230 | 531 | 5.84 Dd, | 180 | 1897 | 457 | 4.77 NOTES Hermetically sealed package High irradiance level e 400NOM. | 2.54NOM. 2 ; e .050 NOM. 1.27 NOM. 2 m European Pro Electron registered h 030 76 j 031 | .044 7O | 1.11 k 036 | 046 92 | 1.16 1 a 45 45 45 45 3 3 ( ; | ANODE CATHODE (CONNECTED TO CASE) sri604 NOTES: 1. MEASURED FROM MAXIMUM DIAMETER OF DEVICE. 2. LEADS HAVING MAXIMUM DIAMETER .021 (.533mm) MEASURED IN GAUGING PLANE .054 + .001 .000 (137 + 025 000mm) BELOW THE REFERENCE PLANE OF THE DEVICE SHALL BE WITHIN .007 (.778mm) THEIR TRUE POSITION RELATIVE TO MAXIMUM WIDTH TAB. 3. FROM CENTERLINE TAB. OPTOELECTRONICS GaAs INFRARED EMITTING DIODE 65C to +150C 65C to +125C Soldering: Lead Temperature (Iron) 6.2.0... cc cece cece tee eaten eenes 240C for 5 sec.*59 Lead Temperature (Flow) 2.0.0... 0.0... ccc eee eee n ete eenanetennaes 260C for 10 sec.2*9 Continuous Forward Current ....00.000000 000 cece cece eee cence eeebebneeenbnntennnnnus 100 mA Forward Current (pw, 1 4S; 200 HZ) 02. t en cee n seb ae bene enn etennees 10A Reverse Voltage 62. e een e ee beens teeta eeeenevetvnenes 3 Volts Power Dissipation (T, = 25C) 20.0... ccc cece eee een eeeeeernettnnnnnnes 170 mW Power Dissipation (Tg = 25C) 20... cece e tent ee eee etnies terete eeennnnnes 1.3 W PARAMETER SYMBOL TEST CONDITIONS Forward Voltage Ve . Vv |. = 100 mA Reverse Leakage Current Ih BA Va=3V Peak Emission Wavelength Ae nm |. = 100 mA Emission Angle at 2 Power 8 Degrees Total Power CQX15 Po . mw |; = 100 mA Total Power CQX17 Po . mW Il. = 100 mA Rise Time 0-90% of output t . bs Fall Time 100-10% of output t . us . Derate power dissipation linearly 1.70mW/C above 25C ambient. . Derate power dissipation linearly 13.0mW/C above 25C case. AMA flux is recommended. . Methanol or lsopranol alcohols are recommended as cleaning agents. . Soldering iron tip Ae (1.6 mm) minimum from housing. As long as leads are not under any stress or spring tension. Total power output, Po, is the total power radiated by the device into a solid angle of 2m steradians. NO OAS GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 100 a 20 he BS | PULSED 10 Pw eo,5 [I BH re . CURRENT FH 2 W 5 2 J 3 3 2 AC & NM a ConTINUOUS & oe e fo @ S 2 wer S , go Hl Bos 3 ti x J oe 2 NORMALIZED $ IN] Zo 100m, 2 Va Tar3"e os NORMALIZED TO DN " Po Tp HlOOma 0.08 Tas 28C 02 0.02 oot or 002 00S mH 02 .05 Ol 12 05 10 wo -50 -2 23 50 5 100 123. wo Tr- FORWARD CURRENT - AMPERES Ta-AMSIENT TEMPERATURE ~C Fig. 1. Power Output vs. input Current sT1271 Fig. 2. Power Output vs. Temperature 11276 ae 100 = 60 80 Zz ZA A 60 Zz Zz Zz al ff. Al A. 40 g 20 1 g /. L s | g SL f Zou ze 5 20 to) = oe ~- x Ta 210C 25C =55C a g 7 F 2 o2 f a _f. i 5 o 6 7 7 7 di ya 2 on { : 7 7 \. oa 7 & is : fi_f{-_} i +r | / 0 Li o 1 2 3 4 5 6 ? a 9 to 0 1 L2 13 4 1s Vr- FORWARD VOLTAGE - VOLTS Ve-FORWARO VOLTAGE VOLTS Fig. 3. Forward Voltage vs. Forward Current 811272 Fig. 4. Forward Voltage vs. Forward Current = ST1275 100 /_| \ b & = e 60 : Sol & 3 3 = 20 / \ ea eo 6 40 20 20~40~C* @- ANGULAR DISPLACEMENT FROM OPTICAL AXIS - DEGREES Fig. 5. Typical Radiation Pattern sv1274