© Semiconductor Components Industries, LLC, 2008
May, 2008 Rev. 5
1Publication Order Number:
MBR16100CT/D
MBR16100CT
SWITCHMODE]
Power Rectifier
Features and Benefits
Low Forward Voltage
Low Power Loss / High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
Low Stored Charge Majority Carrier Conduction
16 A Total (8.0 A Per Diode Leg)
PbFree Package is Available*
Applications
Power Supply Output Rectification
Power Management
Instrumentation
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets UL 94 V0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Rating: Human Body Model = 3B
Machine Model = C
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
MBR16100CT TO220 50 Units/Rail
SCHOTTKY BARRIER
RECTIFIER
16 AMPERES, 100 VOLTS
1
3
2, 4
http://onsemi.com
MBR16100CTG TO220
(PbFree)
50 Units/Rail
TO220AB
CASE 221A
PLASTIC
STYLE 6
3
4
12
MARKING
DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
B16100 = Device Code
G = PbFree Package
AKA = Diode Polarity
AYWW
B16100G
AKA
MBR16100CT
http://onsemi.com
2
MAXIMUM RATINGS (Per Diode Leg)
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100 V
Average Rectified Forward Current
(TC = 166°C) Per Diode
Per Device
IF(AV) 8.0
16
A
Peak Repetitive Forward Current
(Square Wave, 20 kHz)
TC = 165°C
IFRM 16 A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM 150 A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 0.5 A
Operating Junction Temperature (Note 1) TJ*65 to +175 °C
Storage Temperature Tstg *65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Thermal Resistance, JunctiontoCase (Min. Pad)
JunctiontoAmbient (Min. Pad)
RqJC
RqJA
2.0
60
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic Symbol Min Typical Max Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 8.0 A, TJ = 125°C)
(iF = 8.0 A, TJ = 25°C)
(iF = 16 A, TJ = 125°C)
(iF = 16 A, TJ = 25°C)
vF
0.56
0.68
0.67
0.79
0.60
0.74
0.69
0.84
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR
0.95
0.0013
5.0
0.1
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.
MBR16100CT
http://onsemi.com
3
Figure 1. Typical Forward Voltage Per Diode Figure 2. Maximum Forward Voltage Per Diode
0.60
VF
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100
10
0.2 0.4 0.8
1
0.1
1
TJ = 25°C
175°C
125°C75°C
0.50.1 0.3 0.7 0.9
iF
, INSTANTANEOUS FORWARD
VOLTAGE (AMPS)
0.60
VF
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100
10
0.2 0.4 0.8
1
0.1
1
TJ = 25°C
175°C
125°C75°C
0.50.1 0.3 0.7 0.9
IF
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
Figure 3. Typical Reverse Current Per Diode Figure 4. Typical Capacitance Per Diode
0
VR, REVERSE VOLTAGE (VOLTS)
10 20 30 40 100
Figure 5. Current Derating, Case Per Leg Figure 6. Current Derating, Ambient Per Leg
50 60 70 80 90
IR, REVERSE CURRENT (AMPS)
TJ = 25°C
175°C
125°C
75°C
0
VR, REVERSE VOLTAGE (VOLTS)
10 20 30 40 10050 60 70 80 90
IR, REVERSE CURRENT (AMPS)
TJ = 25°C
175°C
125°C
75°C
I , AVERAGE FORWARD CURRENT (AMPS)
F (AV)
TA, AMBIENT TEMPERATURE (°C)
05025 75
2.0
4.0
6.0
8.0
10
TC, CASE TEMPERATURE (C°)
180
14
4.0
0
dc
SQUARE WAVE
145 155 160
I , AVERAGE FORWARD CURRENT (AMPS)
F (AV)
2.0
12
16
6.0
8.0
10
12
14
16
140 150 0100 125 150 175
SQUARE WAVE
RATED VOLTAGE APPLIED
RqJA = 16° C/W
dc
RqJA = 60° C/W
(NO HEATSINK)
170 175
165
dc
1E1
1E2
1E3
1E6
1E7
1E5
1E4
1E1
1E2
1E3
1E6
1E7
1E5
1E4
MBR16100CT
http://onsemi.com
4
VR, REVERSE VOLTAGE (VOLTS)
100
1200
600
0
20 30 40 80
1400
1000
800
50 60 70
200
400
90 100
C, CAPACITANCE (pF)
Figure 7. Forward Power Dissipation Figure 8. Typical Capacitance Per Diode
P , AVERAGE FORWARD POWER DISSIPATION (WATTS)
F (AV)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
04 12816
24
16
0
8
4
12
SQUARE WAVE
20 24 28 30
20
28
dc
26
18
2
10
6
14
22
30
210614182226
TJ = 175°C
MBR16100CT
http://onsemi.com
5
PACKAGE DIMENSIONS
TO220
CASE 221A09
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
T
C
S
T
U
R
J
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81357733850
MBR16100CT/D
SWITCHMODE is a registered trademark of Semiconductor Components Industries, LLC (SCILLC).
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loca
l
Sales Representative