DSA 60 C 100PB advanced V RRM = 100 V I FAV = 2x 30 A V F = 0.78 V Schottky High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number (Marking on product) DSA 60 C 100PB Features / Advantages: Applications: Package: Very low Vf Extremely low switching losses Low Irm-values Improved thermal behaviour High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Rectifiers in switch mode power supplies (SMPS) Free wheeling diode in low voltage converters Industry standard outline Epoxy meets UL 94V-0 RoHS compliant TO-220AB Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF max. Unit TVJ = 25 C 100 V VR = 100 V TVJ = 25 C 0.5 mA VR = 100 V TVJ = 125 C 5 mA I F = 30 A I F = 60 A TVJ = 25 C 0.95 1.15 V V I F = 30 A I F = 60 A T VJ = 125 C 0.78 1.01 V V rectangular, d = 0.5 T C = 150 C 30 A T VJ = 175 C 0.46 7.8 V m 0.85 K/W 175 C TC = 25 C 175 W 230 A Conditions forward voltage min. I FAV average forward current VF0 rF threshold voltage slope resistance R thJC thermal resistance junction to case TVJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current tp = 10 ms (50 Hz), sine TVJ = 45 C CJ junction capacitance VR = TVJ = 25 C EAS non-repetitive avalanche energy I AS = 10 A; I AR repetitive avalanche current VA = 1.5*VR typ.; f = 10 kHz for power loss calculation only V; f = 1 MHz L = 100 H TVJ = 25 C Data according to IEC 60747and per diode unless otherwise specified (c) 2005 IXYS all rights reserved http://store.iiic.cc/ pF 5 mJ 1 A 0614 IXYS reserves the right to change limits, conditions and dimensi -55 typ. DSA 60 C 100PB advanced Ratings Symbol Definition Conditions I RMS RMS current per pin* R thCH thermal resistance case to heatsink MD mounting torque FC mounting force with clip T stg storage temperature min. typ. max. Unit 35 A 0.50 K/W 0.4 0.6 Nm 20 60 N -55 150 C Weight 2 g * Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-220AB M C D B E F N A H G J K L R Millimeter Min. Max. Inches Min. Max. A B 12.70 13.97 14.73 16.00 0.500 0.550 0.580 0.630 C D 9.91 3.54 10.66 4.08 0.390 0.420 0.139 0.161 E F 5.85 2.54 6.85 3.18 0.230 0.270 0.100 0.125 G H 1.15 2.79 1.65 5.84 0.045 0.065 0.110 0.230 J K 0.64 2.54 1.01 BSC 0.025 0.040 0.100 BSC M N 4.32 1.14 4.82 1.39 0.170 0.190 0.045 0.055 Q R 0.35 2.29 0.56 2.79 0.014 0.022 0.090 0.110 Data according to IEC 60747and per diode unless otherwise specified (c) 2005 IXYS all rights reserved http://store.iiic.cc/ 0614 IXYS reserves the right to change limits, conditions and dimensi Q Dim.