SFH 225 FA
Semiconductor Group 3 1998-04-20
Dunkelstrom, VR = 10 V
Dark current IR2 (≤ 30) nA
Spektrale Fotoempfindlichkeit
Spectral sensitivity Sλ0.63 A/W
Quantenausbeute
Quantum yield η0.90 Electrons
Photon
Leerlaufspannung, Ee = 0.5 mW/cm2
Open-circuit voltage VO330 (≥ 250) mV
Kurzschlußstrom, Ee = 0.5 mW/cm2
Short-circuit current ISC 17 µA
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA
tr, tf20 ns
Durchlaßspannung, IF = 100 mA, E = 0
Forward voltage VF1.3 V
Kapazität, VR = 0 V, f = 1 MH z, E = 0
Capacitance C048 pF
Temperaturkoeffizient von VO
Temperature coefficient of VO
TCV– 2.6 mV/K
Temperaturkoeffizient von ISC
Temperature coefficient of ISC
TCI0.18 %/K
Rauschäquivalente Strahlungsleistung
Noise equivalent power
VR = 10 V
NEP 3.6 ×10– 14 W
√Hz
Nachweisgrenze, VR = 10 V
Detection limit D* 6.1 ×1012 cm · √Hz
W
Kennwerte (TA = 25 °C, λ = 870 nm)
Characteristics (cont’d)
Bezeichnung
Description Symbol
Symbol Wert
Value Einheit
Unit