2N5783 PNP
2N5786 NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5783 and
2N5786 types are Complementary Silicon Power
Transistors designed for general purpose switching and
amplifier applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 45 V
Collector-Emitter Voltage VCER 45 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 3.5 V
Continuous Collector Current IC 3.5 A
Continuous Base Current IB 1.0 A
Power Dissipation PD 10 W
Power Dissipation (TA=25°C) PD 1.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJC 17.5 °C/W
Thermal Resistance ΘJA 175 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICEV V
CE=45V, VBE=1.5V 10 μA
ICEV V
CE=45V, VBE=1.5V, TC=150°C 1.0 mA
ICER V
CE=40V, RBE=100Ω 10 μA
ICER V
CE=40V, RBE=100Ω, TC=150°C 1.0 mA
ICEO V
CE=25V 100 μA
IEBO V
EB=3.5V 10 μA
BVCER I
C=10mA, RBE=100Ω 45 V
BVCEO I
C=10mA 40 V
VCE(SAT) I
C=1.6A, IB=160mA 1.0 V
VCE(SAT) I
C=3.2A, IB=800mA 2.0 V
VBE(ON) V
CE=2.0V, IC=1.6A 1.5 V
hFE V
CE=2.0V, IC=1.6A 20 150
hFE V
CE=2.0V, IC=3.2A 4.0
fT V
CE=2.0V, IC=100mA, f=4.0MHz (2N5783) 8.0 60 MHz
fT V
CE=2.0V, IC=100mA, f=200kHz (2N5786) 1.0 4.0 MHz
hfe V
CE=2.0V, IC=100mA, f=1.0kHz 25
ton V
CC=30V, IC=1.0A, IB1=IB2=100mA (2N5783) 0.5 μs
ton V
CC=30V, IC=1.0A, IB1=IB2=100mA (2N5786) 5.0 μs
toff V
CC=30V, IC=1.0A, IB1=IB2=100mA (2N5783) 2.5 μs
toff V
CC=30V, IC=1.0A, IB1=IB2=100mA (2N5786) 15 μs
TO-39 CASE
R1 (21-September 2011)
www.centralsemi.com
2N5783 PNP
2N5786 NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
www.centralsemi.com
R1 (21-September 2011)
