TLP626,TLP626-2,TLP626-4
2002-09-25
1
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP626,TLP626-2,TLP626-4
Programmable Controllers
AC / DC−Input Module
Telecommunication
The TOSHIBA TLP626, −2 and −4 consist of gallium arsenide infrared
emitting diodes connected in inverse parallel, optically coupled to a
photo−transistor.
The TLP626−2 offers two isolated channels in an eight lead plastic DIP,
while the TLP626−4 provides four isolated channels in a sixteen plastic
DIP.
· Collector−emitter voltage: 55V(min.)
· Current transfer ratio
Current Transfer Ratio(min.)
Ta = 25°C Ta = -25~75°C
Classi-
fication IF = ±1mA
VCE = 0.5V
IF = ±0.5mA
VCE = 1.5V
IF = ±1mA
VCE = 0.5V
Marking
Of
Classi-
fication
Rank BV 200% 100% 100% BV
Standard 100% 50% 50% BV, blank
· Isolation voltage: 5000Vrms min.
· UL recognized: UL1577, file no.E67349
· BSI approved: BS EN60065: 1994 certificate no.7426
BS EN60950: 1992 certificate no.7427
· Note: Application type name for certification test,
please use standard product type name, i.e.
TLP626(BV): TLP626
Pin Configuration (top view)
1 : Anode
Cathode
2 : Cathode
Anode
3 : Emitter
4 : Collector
TLP626
1
2
4
3
1, 3, 5, 7 : Anode, Cathode
2, 4, 6, 8 : Cathode, Anode
9, 11, 13, 15 : Emitter
10, 12, 14, 16 : Collector
TLP626
–
4
1
2
16
15
3
4
14
13
5
6
12
11
7
8
10
9
1, 3 : Anode
Cathode
2, 4 : Cathode
Anode
5, 7 : Emitter
6, 8 : Collector
TLP626
–
2
1
2
8
7
3
4
6
5
TOSHIBA 11−5B2
Weight: 0.26g
TOSHIBA 11−10C4
Weight: 0.54g
TOSHIBA 11−20A3
Weight: 1.1g
Unit in mm
TLP626,TLP626-2,TLP626-4
2002-09-25
2
Maximum Ratings (Ta = 25°C)
Rating
Characteristic Symbol
TLP626 TLP626-2
TLP626-4
Unit
Forward current IF 60 50 mA
Forward current derating ∆IF / °C -0.7(Ta ≥ 39°C) -0.5(Ta ≥ 39°C) mA / °C
Pulse forward current IFP 1(100µs pulse,100pps) A
Power dissipation (1 circuit) PD 100 70 mW
Power dissipation derating
(Ta ≥ 25°C, 1 circuit) ∆PD / °C -1.0 -0.7 mW / °C
LED
Junction temperature Tj 125 °C
Collector-emitter voltage VCEO 55 V
Emitter-collector voltage VECO 7 V
Collector current IC 50 mA
Collector power dissipation (1 circuit) PC 150 100 mW
Collector power dissipation derating
(Ta ≥ 25°C, 1 circuit) ∆PC / °C -1.5 -1.0 mW / °C
Detector
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
Operating temperature range Popr -55~100 °C
Lead soldering temperature Tsol 260(10s) °C
Total package power dissipation (1 circuit) PT 250 150 mW
Total package power dissipation derating
(Ta ≥ 25°C, 1 circuit) ∆PT / °C -2.5 -1.5 mW / °C
Isolation voltage (Note 1) BVS 5000(AC, 1min., RH≤60%) V rm s
(Note 1) Device considered a two terminal: LED side pins shorted together, and
detector side pins shorted together.
Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage VCC ― 5 24 V
Forward current IF(RMS) ― 1.6 20 mA
Collector current IC ― 1 10 mA
Operating temperature Topr -25 ― 75 °C
TLP626,TLP626-2,TLP626-4
2002-09-25
3
Individual Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF IF = ±10mA 1.0 1.15 1.3 V
Reverse current IF V
F = ±0.7V ― 2.5 20 µA
LED
Capacitance CT V = 0, f = 1MHz ― 60 ― pF
Collector-emitter
breakdown voltage V(BR)CEO IC = 0.5mA 55 ― ― V
Emitter-collector
breakdown voltage V(BR)ECO IE = 0.1mA 7 ― ― V
VCE = 24V ― 10 10 nA
Collector dark current ICEO
VCE = 24V, Ta = 85°C ― 2 50 µA
Detector
Capacitance collector
to emitter CCE V=0, f=1MHz ― 12 ― pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
100 ― 1200
Current transfer ratio IC / IF
IF = ±1mA, VCE = 0.5V
rank BV 200 ― 1200
%
50 ― ―
Low input CTR IC / IF(low) IF = ±0.5mA, VCE = 1.5V
rank BV 100 ― ―
%
IC = 0.5mA, IF = ±1mA ― ― 0.4
― 0.2 ―
Collector-emitter
saturation voltage VCE(sat) IC = 1mA, IF = ±1mA
rank BV ― ― 0.4
V
Off-state collector current IC(off) VF = ±0.7V, VCE = 24V ― 1 10 µA
CTR symmetry *1 IC(ratio) IC(IF = -1mA) / IC(IF = 1mA) 0.5 ― 2 ―
Coupled Electrical Characteristics (Ta = -
--
-25～
～～
～75°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
50 ― ―
Current transfer ratio IC / IF
IF = 1mA, VCE = 0.5V
rank BV 100 ― ―
%
― 50 ―
Low input CTR IC / IF(low) IF = 0.5mA, VCE = 1.5V
rank BV ― 100 ―
%
*1
I
C(ratio) =
V)5
CE
V
F1,
I
F
(I
C1
I
V)5
CE
V
F2,
I
F
(I
C2
I
==
== IF1 IC2
IC1
VCE
IF2
TLP626,TLP626-2,TLP626-4
2002-09-25
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Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Capacitance input to output CS V
S = 0, f = 1MHz ― 0.8 ― pF
Isolation resistance RS V
S = 500V 5×1010 1014 ― Ω
AC, 1 minute 5000 ― ―
AC, 1 second, in oil ― 10000 ―
Vrms
Isolation voltage BVS
DC, 1 minute, in oil ― 10000 ― Vdc
Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Rise time tr ― 8 ―
Fall time tf ― 8 ―
Turn-on time ton ― 10 ―
Turn-off time toff
VCC = 10V, IC = 2mA
RL = 100Ω
― 8 ―
µs
Turn-on time tON ― 10 ―
Storage time ts ― 50 ―
Turn-off time TOFF
RL = 4.7kΩ (Fig.1)
VCC = 5 V, IF = ±1.6mA
― 300 ―
µs
Fig. 1 Switching operating conditions
VCE
tON
IF
tOFF
VCC
4.5V
0.5V
tS
IF
RL
VCC
VCE
TLP626,TLP626-2,TLP626-4
2002-09-25
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∆VF / ∆Ta – IF
Forward current IF (mA)
Forward voltage temperature
coefficient ∆VF/∆Ta (mV/°C)
－2.8
－0.4
0.3 50
0.1
－0.8
－1.2
－1.6
－2.0
－2.4
0.5 1 3 5 10 30
Pulse forward voltage VFP (V)
IFP – VFP
Pulse forward current IFP (mA)
1000
1
0
500
300
100
50
30
10
5
3
0.4 0.8 1.2 1.6 2.0 2.4
Pulse width ≦ 10 µs
Repetitive
Frequency = 100 Hz
Ta = 25 °C
120
Allowable forward current
IF (RMS) (mA)
IF – Ta
Ambient temperature Ta (°C)
100
0
－20
80
60
40
20
0 20 40 60 80 100
TLP626
TLP626－2, －4
Duty cycle ratio DR
Allowable pulse forward current
IFP (mA)
IFP – DR
5000
10
３
3000
1000
500
300
100
50
30
10－3 3 10－2 3 10－1 3 100
Pulse width ≤ 100 µs
Ta = 25 °C
Ambient temperature Ta (°C)
Allowable collector power
dissipation PC (mW)
PC – Ta
200
0
160
120
80
40
－20 0 20 40 60 80 100 120
TLP626
TLP626－2, －4
IF – VF
Forward voltage VF (V)
Forward current IF (mA)
100
0.1
0.4
50
30
10
5
3
1
0.5
0.3
06 0.8 1.0 1.2 1.4 1.6
Ta = 25 °C
TLP626,TLP626-2,TLP626-4
2002-09-25
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Current transfer ratio IC / IF (%)
IC / IF – IF
Forward current IF (mA)
1000
10
0.1
500
300
50
30
0.3 0.5 1 3 5 10
100
Ta = 25 °C
VCE = 5 V
VCE = 1.5 V
VCE = 0.5 V
Ambient temperature Ta (°C)
Collector current IC (mA)
IC – Ta
0.03 －20
30
10
5
3
1
0.5
0.3
0 20 40 60 80 100
0.1
0.05
VCE = 1.5 V
VCE = 0.5 V
0.2 m
A
0.5 m
A
1m
A
2 mA
IF = 2 mA
10
IC – VCE
Collector-emitter voltage VCE (V)
Collector current IC (mA)
4.0
0
3.5
2.0
1.0
0.5
1.5
3.0
2.5
0.1 0.3 0.5 1 3 5
Ta = 25 °C IF = 1.0 mA
0.8 m
A
0.6 m
A
0.5 m
A
0.4 m
A
0.2 m
A
IC – IF
Forward current IF (mA)
Collector current IC (mA)
50
0.01
0.1
0.5
0.3
0.05
0.03
0.3 0.5 1 3 5 10
0.1
30
10
5
3
1
T
a = 25 °C
V
CE = 5 V
V
CE = 1.5 V
V
CE = 0.5 V
TLP626,TLP626-2,TLP626-4
2002-09-25
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Ambient temperature Ta (°C)
Collector dark current ID (ICEO) (µA)
ID – Ta
10－5
0
101
100
10－1
10－2
10－3
20 40 60 80 100 120
10－4
5 V
VCE = 24 V
10 V
Load resistance RL (kΩ)
Switching time (µs)
Switching Time – RL
3
3000
1000
500
300
100
50
30
10
5.
1
3 5 10 30 50 100
Ta = 25 °C
IF = 1.6 mA
VCC = 5 V
tOFF
ts
tON
TLP626,TLP626-2,TLP626-4
2002-09-25
8
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
000707EBC
RESTRICTIONS O N PRODUCT USE
