PBSS5250T,215 - NXP - Pdf.Support

DATA SH EET

Product data sheet 2003 Oct 09

DISCRETE SEMICONDUCTORS

PBSS5250T

50 V, 2 A

PNP low VCEsat (BISS) transistor

M3D088

2003 Oct 09 2

NXP Semiconductors Product data sheet

50 V, 2 A

PNP low VCEsat (BISS) transistor PBSS5250T

FEATURES

•Low collector-emitter saturation volt age VCEsat

•High collector current capability: IC and ICM

•Higher efficiency leading to less heat generation

•Reduced printed-circuit bo ard requirements

•Cost effective alternative to MOSFETs in specific

applications.

APPLICATIONS

•Power management

– DC/DC converters

– Supply line switching

– Battery charger

– LCD backlighting

•Peripheral drivers

– Driver in low su pply voltage applications (e.g. lamps

and LEDs)

– Inductive load driver (e.g. relays, buzzers and motors).

DESCRIPTION

PNP BISS transistor in a SOT23 plastic pa ck age offering

ultra low VCEsat an d RCEsat parameters.

MARKING

Note

1. * = p: Made in Hong Kong.

* = t: Made in Malaysia.

* = W: Made in China.

TYPE NUMBER MARKING CODE(1)

PBSS5250T 3H*

PINNING

PIN DESCRIPTION

1base

2emitter

3collector

handbook, halfpage

MAM256

Top view

Fig.1 Simplified outline (SOT23 ) and symbo l .

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

VCEO collector-emitter voltage −50 V

ICcollector current (DC) −2 A

ICM peak collector current −3 A

RCEsat equivalent on-resistance 150 mΩ

ORDERING INFORMATION

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

PBSS5250T −plastic surface mounted package; 3 leads SOT23

2003 Oct 09 3

NXP Semiconductors Pr oduct data shee t

50 V, 2 A

PNP low VCEsat (BISS) transistor PBSS5250T

LIMITING VALUES

In accordance with the Absolute Max imum Rating System (IEC 60134).

Notes

1. Device mounted o n a FR4 printed-circuit b oard; single-sided copper; tinplated; stand ar d footprint.

2. Device mounted o n a FR 4 printed-circuit board; single-sided copper; tinplate d; mounting pad for collector 1 cm2.

THERMAL CHARACTE RISTICS

Notes

1. Device mounted o n a FR4 printed-circuit b oard; single-sided copper; tinplated; stand ar d footprint.

2. Device mounted o n a FR 4 printed-circuit board; single-sided copper; tinplate d; mounting pad for collector 1 cm2.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volta ge open emitter − −50 V

VCEO collector-emitter voltage open base − −50 V

VEBO emitter-base voltage open collector − −5 V

ICcollector current (DC) − −2 A

ICM peak collector current single peak − −3 A

IBbase current (DC) − −300 mA

Ptot total power dissipation Tamb ≤ 25 °C; note 1 300 mW

Tamb ≤ 25 °C; note 2 −480 mW

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient in free air; note 1 417 K/W

in free air; note 2 260 K/W

2003 Oct 09 4

NXP Semiconductors Pr oduct data shee t

50 V, 2 A

PNP low VCEsat (BISS) transistor PBSS5250T

CHARACTERISTICS

Tj = 25 °C; unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current VCB = −50 V; IE = 0 −−−100 nA

VCB = −50 V; IE = 0; Tj = 150 °C−−−50 μA

IEBO emitter cut-off current VEB = −5 V; IC = 0 −−−100 nA

hFE DC current gain VCE = −2 V; IC = 0.5 A 200 − −

VCE = −2 V; IC = 1 A; note 1 200 − −

VCE = −2 V; IC = 2 A; note 1 130 − −

VCEsat collector-emitter saturation

voltage IC = −0.5 A; IB = −50 mA −−−90 mV

IC = −1 A; IB = −50 mA −−−180 mV

IC = −2 A; IB = −100 mA −−−300 mV

RCEsat equivalent on-resistance IC = −2 A; IB = −200 mA; note 1 −−150 mΩ

VBEsat base-emitt er saturatio n voltage IC = −2 A; IB = −100 mA; note 1 −−−1.1 V

VBEon base-emitter turn-on voltage VCE = −2 V; IC = −1 A; note 1 −1.2 −−V

fTtransition frequen c y IC = −100 mA; VCE = −5 V;

f = 100 MHz 100 −−MHz

Cccollector capacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz −−35 pF

2003 Oct 09 5

NXP Semiconductors Pr oduct data shee t

50 V, 2 A

PNP low VCEsat (BISS) transistor PBSS5250T

PACKAGE OUTLINE

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

97-02-28

99-09-13

IEC JEDEC EIAJ

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface mounted package; 3 leads SOT2

2003 Oct 09 6

NXP Semiconductors Pr oduct data shee t

50 V, 2 A

PNP low VCEsat (BISS) transistor PBSS5250T

DATA SHEET STATUS

Notes

1. Please consult the most rec en tly issued document before initiating or co mpleting a design.

2. The product s tatus of device(s ) described in this do cument may have changed since this docu ment was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the produc t s pecification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such informa tio n.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to informa tion

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereo f.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warran ted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratin gs only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict between information

in this document an d such terms and conditio ns, the latter

will prevail.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for accept ance or the grant, conveyance or

implication of any license under any copyrights, patents or

other industr i al or inte llectual property ri gh ts.

Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

Contact information

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Customer notification

This data sheet was changed to reflect the new company name NXP Semicon ductors. No change s were

made to the content, except for the legal definitions and disclaimer s.

Printed in The Netherlands R75/01/pp7 Date of release: 2003 Oct 09 Document orde r number: 9397 750 11904