10420-F Harris Oaks Blvd., Charlotte, NC 28269 Phone: (704) 596-9060 Fax: (704) 596-0950 Web: www.rfnitro.com 2-12
Features
• High Microwave Power Output
• Large RF Voltage Swing, ~25 volts
• High Breakdown Voltages, ~ 100 volts
• State-of-the-Art Wide Bandgap Technology
• High Temperature Operation
• Coplanar-Waveguide Probable Design
• High Frequency Performance, fT = 16 GHz,
fmax = 26 GHz
• Large Periphery, 1.0mm Gate Width
Description
RF Nitro’s NGN-125-D standard 1mm periphery High
Electron Mobility Transistor on sapphire substrates
offers high power, high frequency microwave
performance at low-cost. The 1mm periphery device is
comprised of eight 125 micron gate fingers. Standard
devices are 0.5 micron gate length.
The NGN-125-D is available in chip form. Devices are
fabricated on 0.013” thick sapphire or thinner 0.006”
thick sapphire substrate to reduce the thermal
resistance due to the substrate. Call on availability of
packaged parts.
Applications
• High Power Switching.
• High Power Internally Matched FETs.
• High Power Driver Amplifiers utilized in
microwave radio and optical systems.
• High Power Drivers for High Frequency Electro-
Optical Modulators.
• High Power Radar Transmitters
• High Power Oscillator Sources
Electrical Specifications Vd= +7V, Ids = 175 mA, Zo = 50Ω
ΩΩ
Ω, TA = +25 °
°°
°C.
Parameter Test Conditions Units Min. Typ. Max.
Small-Signal Power Gain, S21
f = 0.5 GHz
f = 2.0 GHz
f = 3.5 GHz
f = 6.0 GHz
f = 10.0 GHz
dB
dB
dB
dB
dB
11
11.8
9
6.4
2.2
Saturated Output Power, Psat f =10 GHz,VDS=15V, Load-Pull dBm 29
Linear Power Gain, G f =10 GHz, VDS=15V, Load-Pull dB 10
Short-Circuit Current Gain, h21 f =10 GHz dB 3.0
Unity Current Gain Frequency,
fT from h21 vs. f GHz 15
Maximum Available Gain, MAG f =10.0 GHz dB 9.7
Max. Freq. of Oscillation, fMAX from MAG vs. f GHz 26
Noise Figure – NF f =2.0 GHz dB 3.5
3rd-Order Intercept, IP3 f =2.0 GHz, VDS=20V,
IDS=200mA dBm +39.5
Reverse Isolation, S12 f <10.0 GHz dB -15 -19 (avg.)
Gate leakage Current, IGS VGD = -12V µA/mm 10 100
Gate Bias Voltage, VGS VDS = 10 V, IDS = 250 mA V -3.0
High Power AlGaN/GaN HEMTs on Sapphire
DC-8 GHz NGN-125-D
6000060 Rev. 1
2
High Power AlGaN/GaN HEMTs on Sapphire
6000060 Rev. 1
10420-F Harris Oaks Blvd., Charlotte, NC 28269 Phone: (704) 596-9060 Fax: (704) 596-0950 Web: www.rfnitro.com 2-13
Absolute Maximum Ratings
Exceeding any one or a combination of these limits may
cause permanent damage.
Parameter Absolute Maximum
RF Input Power, Pin +30 dBm
Power Dissipation, Pdiss 8 W
Drain Current, IDS 700mA
Gate Current, IGS 1mA/mm
Channel Temperature 300o C
Operating Temperature -45 °C to +85 °C
Storage Temperature -65 °C to +150 °C
Ordering Information
Part Number Package
NGN-125-D
GaN/Sapphire FET, 1.0mm
periphery, discrete chip,
coplanar design
Typical Bias Configuration
Application notes related to biasing circuit, device footprint,
and thermal considerations are available upon request.
Typical S-Parameter Data Vd= +7V, Ids = 175 mA, Zo = 50Ω
ΩΩ
Ω, TA = +25 °
°°
°C.
Output Characteristics Transfer Characteristics
Freq.
GHz
S11
(dB)
S11
Mag
S11
Ang
S21
(dB)
S21
Mag
S21
Ang
S12
(dB)
S12
Mag
S12
Ang
S22
(dB)
S22
Mag
S22
Ang
1.0 -.26 0.97 -28.3 11.36 3.7 159.3 -28.0 0.04 69.5 -2.38 0.76 -20.9
2.0 -.53 0.94 -54.9 11.82 3.9 139.5 -21.9 0.08 50.7 -2.97 0.71 -39.1
4.0 -1.11 0.88 -92.6 8.94 2.8 109.2 -18.4 0.12 27.9 -3.88 0.64 -66.0
6.0 -1.61 0.83 -115.6 6.44 2.1 87.9 -17.1 0.14 9.7 -4.15 0.62 -82.8
8.0 -1.83 0.81 -130.4 4.08 1.6 71.3 -17.1 0.14 -2.9 -4.01 0.63 -95.3
10.0 -1.93 0.80 -140.7 2.27 1.3 57.6 -17.1 0.14 -13.3 -3.88 0.64 -105.1
0
100
200
300
400
500
0
10
20
30
40
50
60
70
80
90
100
-10-9-8-7-6-5-4-3-2-1 0
Transconductance and Drain Current
Drain Current, Ids (mA/mm)
Transconductance, gm (mS/mm)
Gate Voltage, Vgs (V)
Vds=5V
0
100
200
300
400
500
0
10
20
30
40
50
60
70
80
90
100
-10-9-8-7-6-5-4-3-2-1 0
Transconductance and Drain Current
Drain Current, Ids (mA/mm)
Transconductance, gm (mS/mm)
Gate Voltage, Vgs (V)
Vds=5V
0
100
200
300
400
500
012345678
Current-Voltage Characteristic
Drain Current Ids (mA)
Drain Voltage Vds (V)
Vstart=0V (Top Curve)
Vstep=-1.0V
0
100
200
300
400
500
012345678
Current-Voltage Characteristic
Drain Current Ids (mA)
Drain Voltage Vds (V)
Vstart=0V (Top Curve)
Vstep=-1.0V
2
High Power AlGaN/GaN HEMTs on Sapphire
6000035 Rev. A
10420-F Harris Oaks Blvd., Charlotte, NC 28269 Phone: (704) 596-9060 Fax: (704) 596-0950 Web: www.rfnitro.com 2-14
NOISE FIGURE (50 Ohm System)
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
35
40
0 5 10 15 20 25 30
Gain
Pout
P.A.E.
Pout (dBm), Gain (dB)
P.A.E. %
Pin (dBm)
RF Power Sweep Vds = 15V, Frequency = 10 GHz, ZS = (-0.43169, 0.21200), ZL1 = (-0.14527, 0.6306)
ZL2 = (-0.39965, 0.48214), TA = +25° C.
2.8
3
3.2
3.4
3.6
3.8
4
11.522.53
Noise Figure versus Frequency
Noise Figure (dB)
Frequency (GHz)
2.8
3
3.2
3.4
3.6
3.8
4
11.522.53
Noise Figure versus Frequency
Noise Figure (dB)
Frequency (GHz)
2
High Power AlGaN/GaN HEMTs on Sapphire
6000060 Rev. 1
10420-F Harris Oaks Blvd., Charlotte, NC 28269 Phone: (704) 596-9060 Fax: (704) 596-0950 Web: www.rfnitro.com 2-15
NGN-125-D (Die Form)
Chip Dimensions: 600 µ
µµ
µm X 785µ
µµ
µm X substrate thickness
Application Notes
Die Attach:
The die attach process mechanically attaches the die to the circuit substrate. In addition, it electrically
connects the ground to the trace on which the chip is mounted, and establishes the thermal path by
which heat can leave the chip.
Wire Bonding:
Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods
are acceptable practices for wire bonding.
Assembly Procedure:
Epoxy or eutectic die attach are both acceptable attachment methods. Top and bottom metalization are
gold. Conductive silver-filled epoxies are recommended. This procedure involves the use of epoxy to
form a joint between the backside gold of the chip and the metalized are of the substrate. A 150°C cure
for 1 hour is necessary. Recommended epoxy is Ablebond 84-1LMI from Ablestik.
Bonding Temperature (Wedge or Ball):
It is recommended that the heater block temperature be set 160°C +/- 10°C.
785 µm
600 µm
2
