PBSS4350T,215 - NEXPERIA

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DATA SH EET

Product data sheet

Supersedes data of 2002 Aug 08

2004 Jan 09

DISCRETE SEMICONDUCTORS

PBSS4350T

50 V; 3 A NPN low VCEsat

(BISS) transistor

2004 Jan 09 2

NXP Semiconductors Product data sheet

50 V; 3 A NPN low VCEsat

(BISS) transistor PBSS4350T

FEATURES

•Low collector-emitter saturation volt age VCEsat and

corresponding low RCEsat

•High collector current capability

•High collector current gain

•Improved efficiency due to reduced heat generation.

APPLICATIONS

•Power management applications

•Low and medium power DC/DC converto rs

•Supply line switching

•Battery chargers

•Linear voltage regula tion with low voltage drop-ou t

(LDO).

DESCRIPTION

NPN low V CEsat transistor in a SOT23 plastic package.

PNP complement: PBSS5350T.

MARKING

Note

1. * = p: Made in Hong Kong.

* = t: Made in Malaysia.

* = W: Made in China.

QUICK REFERENCE DATA

PINNING

TYPE NUMBER MARKING CODE(1)

PBSS4350T ZC*

SYMBOL PARAMETER MAX. UNIT

VCEO collector-emitter voltage 50 V

ICcollector current (DC) 2 A

ICRP repetitive peak collector

current 3 A

RCEsat equivalent on-resistance 130 mΩ

PIN DESCRIPTION

1base

2emitter

3collector

handbook, halfpage

MAM255

Top view

Fig.1 Simplified outline (SOT23 ) and symbo l .

ORDERING INFORMATION

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

PBSS4350T −plastic surface mounted package; 3 leads SOT23

2004 Jan 09 3

NXP Semiconductors Pr oduct data shee t

50 V; 3 A NPN low VCEsat (BISS) transistor PBSS4350T

LIMITING VALUES

In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).

Notes

1. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25.

2. Device mounted on a pr inted-circuit board; single side d copper; tinplated; standard footprint.

3. Device mounted on a pr inted-circuit board; single side d copper; tinplated; mounting pad for collector 1 cm2.

4. Device mounted on a pr inted-circuit board; single side d copper; tinplated; mounting pad for collector 6 cm2.

THERMAL CHARACTE RISTICS

Notes

1. Device mounted on a pr inted-circuit board; single side d copper; tinplated; standard footprint.

2. Device mounted on a pr inted-circuit board; single side d copper; tinplated; mounting pad for collector 1 cm2.

3. Device mounted on a pr inted-circuit board; single side d copper; tinplated; mounting pad for collector 6 cm2.

4. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volta ge open emitter −50 V

VCEO collector-emitter voltage open base −50 V

VEBO emitter-base voltage open collector −5 V

ICcollector current (DC) −2 A

ICRP repetitive peak colle ctor current note 1 −3 A

ICM peak collector current single peak −5 A

IBbase current (DC) −0.5 A

Ptot total power dissipation Tamb ≤ 25 °C; note 2 −300 mW

Tamb ≤ 25 °C; note 3 −480 mW

Tamb ≤ 25 °C; note 4 −540 mW

Tamb ≤ 25 °C; notes 1 and 2 −1.2 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to

ambient in free air; note 1 417 K/W

in free air; note 2 260 K/W

in free air; note 3 230 K/W

in free air; notes 1 and 4 104 K/W

2004 Jan 09 4

NXP Semiconductors Pr oduct data shee t

50 V; 3 A NPN low VCEsat (BISS) transistor PBSS4350T

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-of f current IE = 0; VCB = 50 V − − 100 nA

IE = 0; VCB = 50 V; Tj = 150 °C− − 50 μA

IEBO emitter-base cut-off current IC = 0; VEB = 5 V − − 100 nA

hFE DC current gain IC = 100 mA; VCE = 2 V 300 − −

IC = 500 mA; VCE = 2 V 300 − −

IC = 1 A; VCE = 2 V; note 1 300 − −

IC = 2 A; VCE = 2 V; note 1 200 − −

IC = 3 A; VCE = 2 V; note 1 100 − −

VCEsat collector-emitter saturation

voltage IC = 500 mA; IB = 50 mA − − 80 mV

IC = 1 A; IB = 50 mA − − 160 mV

IC = 2 A; IB = 100 mA; note 1 − − 280 mV

IC = 2 A; IB = 200 mA; note 1 − − 260 mV

IC = 3 A; IB = 300 mA; note 1 − − 370 mV

RCEsat equivalent on-resistance IC = 2 A; IB = 200 mA; note 1 −100 130 mΩ

VBEsat base-emitter saturation

voltage IC = 2 A; IB = 100 mA; note 1 − − 1.1 V

IC = 3 A; IB = 300 mA; note 1 − − 1.2 V

VBEon base-emitter turn-on voltage IC = 1 A; VCE = 2 V; note 1 1.2 − − V

fTtransition frequency IC = 100 mA; VCE = 5 V;

f = 100 MHz 100 − − MHz

Cccollector capacitance IE = Ie = 0; VCB = 10 V; f = 1 MHz − − 25 pF

2004 Jan 09 5

NXP Semiconductors Pr oduct data shee t

50 V; 3 A NPN low VCEsat (BISS) transistor PBSS4350T

handbook, halfpage

1000

200

400

600

800

MLD867

10−11

(1)

10 IC (mA)

hFE

102103104

(3)

(2)

Fig.2 DC current gain as a fu nction of collector

current; ty pical values.

VCE = 2 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage MLD868

1200

400

800

10−1110 IC (mA)

VBE

(mV)

102103104

(1)

(3)

(2)

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

VCE = 2 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage MLD869

100

1300

500

900

10−1110 IC (mA)

VBEsat

(mV)

102103104

(1)

(3)

(2)

Fig.4 Base-emitter saturation v oltage as a

function of collector current; typical values.

IC/IB = 10.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage MLD870

100

1300

500

900

10−1110 IC (mA)

VBEsat

(mV)

102103104

(1)

(3)

(2)

Fig.5 Base-emitter saturation v oltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

2004 Jan 09 6

NXP Semiconductors Pr oduct data shee t

50 V; 3 A NPN low VCEsat (BISS) transistor PBSS4350T

handbook, halfpage

MLD871

103

102

10−1110 IC (mA)

VCEsat

(mV)

102103104

(3)

(2)

(1)

Fig.6 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 10.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

MLD872

103

102

10−1110 IC (mA)

VCEsat

(mV)

102103104

(3)

(1)

(2)

Fig.7 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

MLD873

104

103

102

10−1110 IC (mA)

VCEsat

(mV)

102103104

(3)

(1) (2)

Fig.8 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 50.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

MLD874

104

103

102

10−1110 IC (mA)

VCEsat

(mV)

102103104

(3)

(1) (2)

Fig.9 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 100.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

2004 Jan 09 7

NXP Semiconductors Pr oduct data shee t

50 V; 3 A NPN low VCEsat (BISS) transistor PBSS4350T

handbook, halfpage

103

102

10−2

10−1

MLD875

10−1110 IC (mA)

RCEsat

(Ω)

103

102104

(1)

(3)

(2)

Fig.10 Equivalent on-resistance as a func tion of

collector current; typical values.

IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

2004 Jan 09 8

NXP Semiconductors Pr oduct data shee t

50 V; 3 A NPN low VCEsat (BISS) transistor PBSS4350T

PACKAGE OUTLINE

UNIT A

max. b

cDE e

Qwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT2

2004 Jan 09 9

NXP Semiconductors Pr oduct data shee t

50 V; 3 A NPN low VCEsat (BISS) transistor PBSS4350T

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s ) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for product

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

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any of these products are for illustrative purposes only.

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warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this docu ment, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R75/02/pp10 Date of release: 2004 Jan 09 Document orde r number: 9397 750 12437