© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VCES TC = 25°C to 150°C 3000 V
VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V
VGES Continuous ± 20 V
VGEM Transient ± 30 V
IC25 TC = 25°C 80 A
IC110 TC = 110°C 32 A
ICM TC = 25°C, 1ms 280 A
SSOA VGE = 15V, TVJ = 125°C, RG = 10Ω ICM = 80 A
(RBSOA) Clamped Inductive Load VCES ≤ 2400 V
PCTC = 25°C 400 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10 seconds 260 °C
MdMounting Torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
DS100118(02/09)
IXBH32N300
IXBT32N300
VCES = 3000V
IC110 = 32A
VCE(sat) ≤≤
≤≤
≤ 3.2V
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
Features
zHigh Blocking Voltage
zInternational Standard Packages
zLow Conduction Losses
Advantages
zLow Gate Drive Requirement
zHigh Power Density
Applications:
zSwitched-Mode and Resonant-Mode
Power Supplies
zUninterruptible Power Supplies (UPS)
zLaser Generators
zCapacitor Discharge Circuits
zAC Switches
Preliminary Technical Information
G = Gate C = Collector
E = Emitter TAB = Collector
TO-268 (IXBT)
GE
C (TAB)
TO-247 (IXBH)
GCE
C (TAB)
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250μA, VGE = 0V 3000 V
VGE(th) IC = 250μA, VCE = VGE 2.5 5.0 V
ICES VCE = 0.8 • VCES, VGE = 0V 50 μA
TJ = 125°C 2 mA
IGES VCE = 0V, VGE = ± 20V ±100 nA
VCE(sat) IC = 32A, VGE = 15V, Note 1 2.8 3.2 V
TJ = 125°C 3.5 V
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBH32N300
IXBT32N300
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfS IC = 32A, VCE = 10V, Note 1 16 26 S
Cies 3140 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 124 pF
Cres 40 pF
Qg 142 nC
Qge IC = 32A, VGE = 15V, VCE = 1000V 20 nC
Qgc 57 nC
td(on) 50 ns
tr 185 ns
td(off) 160 ns
tf 720 ns
td(on) 58 ns
tr 515 ns
td(off) 165 ns
tf 630 ns
RthJC 0.31 °C/W
RthCS (TO-247) 0.21 °C/W
Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-247 (IXBH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Resistive Switching Times, TJ = 125°C
IC = 32A, VGE = 15V
VCE = 1250V, RG = 2Ω
Resistive Switching Times, TJ = 25°C
IC = 32A, VGE = 15V
VCE = 1250V, RG = 2Ω
Reverse Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
VF IF = 32A, VGE = 0V 2.1 V
trr 1.5 μs
IRM 33 A
IF = 16A, VGE = 0V, -diF/dt = 100A/μs
VR = 100V, VGE = 0V
TO-268 (IXBT) Outline
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
© 2009 IXYS CORPORATION, All Rights Reserved
IXBH32N300
IXBT32N300
Fig. 1. Output Characteristics
@ 25º C
0
5
10
15
20
25
30
35
40
45
50
55
60
65
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
CE
- Volts
I
C
- Amperes
VGE
= 25V
20V
15V
10V
5V
Fig. 2. Extended Output Characteristics
@ 25º C
0
50
100
150
200
250
300
350
400
450
500
0 2 4 6 8 101214161820
V
CE
- Volts
I
C
-
Amperes
VGE
= 25V
10V
15V
5V
20V
Fig. 3. Output Characteristics
@ 125ºC
0
5
10
15
20
25
30
35
40
45
50
55
60
65
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
CE
- Volts
I
C
- Amperes
VGE
= 25V
20V
15V
10V
5V
Fig. 4. Dependence of V
CE(sat)
on
Jun cti o n Te mp er atu r e
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
VGE
= 15V
I C = 64A
I C = 32A
I C = 16A
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to -Emi tter Vo l tag e
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
5 7 9 11 13 15 17 19 21 23 25
V
GE
- Volts
V
CE
- Volts
I C
= 64A
TJ = 25ºC
16A
32A
Fig. 6. Input Admittance
0
10
20
30
40
50
60
70
80
90
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
V
GE
- Volts
I
C
-
Amperes
TJ = 125ºC
25ºC
- 40ºC
IXYS REF: B_32N300(8P)03-02-09
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBH32N300
IXBT32N300
Fi g . 7. Tran sco n d u ctan ce
0
5
10
15
20
25
30
35
40
45
0 102030405060708090100
I
C
- Amperes
g f s -
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fi g . 9. Gate C h ar g e
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 1kV
I
C
= 32A
I
G
= 10mA
Fi g . 11. R ever se-B i as Safe Op er ati n g Area
0
10
20
30
40
50
60
70
80
90
500 1000 1500 2000 2500 3000
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 10Ω
dV / dt < 10V / ns
Fi g . 10. C ap aci tan ce
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
Fi g . 12. Maximu m Tran sien t Ther mal
Impedance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fi g . 8. F o r war d Vo ltag e D r op o f
Intrinsic Diode
0
10
20
30
40
50
60
70
80
90
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
F
- Volts
I
F
- Amperes
T
J
= 125ºC
T
J
= 25ºC
© 2009 IXYS CORPORATION, All Rights Reserved
IXBH32N300
IXBT32N300
Fi g. 14. R esi stive Tu r n -on
Ri se Time vs. Dr ai n C u r r ent
0
100
200
300
400
500
600
700
800
15 20 25 30 35 40 45 50 55 60 65
IC - Amperes
t
r
- Nanoseconds
R
G
= 2Ω
V
GE
= 15V
V
CE
= 1250V
T
J
= 125ºC
T
J
= 25ºC
Fi g. 15. R esi stive Tu r n -on
Switc h i n g Times vs . Gate R esi s tan ce
350
400
450
500
550
600
650
23456789101112131415
RG - Ohms
t
r
- Nanoseconds
50
55
60
65
70
75
80
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 1250V
I
C
= 32A
I
C
= 64A
Fig. 16. Resistive Turn-off
Switching Ti mes vs. Junction Temperature
200
300
400
500
600
700
800
900
1000
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
t
f
- Nanoseconds
120
130
140
150
160
170
180
190
200
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2Ω, V
GE
= 15V
V
CE
= 1250V
I
C
= 64A
I
C
= 32A
Fi g . 17. R esi sti v e Tur n -o f f
Switching Ti mes vs. Drain Current
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
15 20 25 30 35 40 45 50 55 60 65
IC - Amperes
t
f
- Nanoseconds
110
120
130
140
150
160
170
180
190
200
210
220
230
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2Ω, V
GE
= 15V
V
CE
= 1250V
T
J
= 125ºC, 25ºC
Fi g. 13. R esi stive Tu r n -on
Ri se Ti me vs. Jun cti o n Temp er atur e
0
100
200
300
400
500
600
700
800
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
t
r
- Nanoseconds
R
G
= 2Ω
V
GE
= 15V
V
CE
= 1250V
I
C
= 32A
I
C
= 64A
Fi g . 18. R esi sti v e Tur n -o f f
Swit ch i n g Times vs . Gate R esi sta n ce
200
300
400
500
600
700
800
900
1000
2 3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
t
f
- Nanoseconds
50
100
150
200
250
300
350
400
450
t
d(off)
- Nanoseconds
t
f
t
d(off
)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 1250V
I
C
= 64A
I
C
= 32A
IXYS REF: B_32N300(8P)03-02-09
