
VS-10CTQ150S-M3, VS-10CTQ150-1-M3
www.vishay.com Vishay Semiconductors
Revision: 27-Oct-17 2Document Number: 95729
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Note
(1) Pulse width < 300 μs, duty cycle < 2 %
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current, see fig. 5
per leg IF(AV) 50 % duty cycle at TC = 155 °C, rectangular waveform 5A
per device 10
Maximum peak one cycle non-repetitive
surge current per leg, see fig. 7 IFSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
VRRM applied
620
A
10 ms sine or 6 ms rect. pulse 115
Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 1 A, L = 10 mH 5 mJ
Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 1A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1 VFM (1)
5 A TJ = 25 °C 0.93
V
10 A 1.10
5 A TJ = 125 °C 0.73
10 A 0.86
Maximum reverse leakage current per
leg See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
0.05 mA
TJ = 125 °C 7
Threshold voltage VF(TO) TJ = TJ maximum 0.468 V
Forward slope resistance rt28 m
Maximum junction capacitance per leg CTVR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 200 pF
Typical series inductance per leg LSMeasured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg -55 to +175 °C
Maximum thermal resistance,
junction to case per leg RthJC DC operation
3.50
°C/W
Maximum thermal resistance,
junction to case per package 1.75
Typical thermal resistance,
case to heatsink (only for TO-220) RthCS Mounting surface, smooth and greased 0.50
Approximate weight 2g
0.07 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style D2PAK (TO-263AB) 10CTQ150S
Case style TO-262AA 10CTQ150-1