JAN1N5907 - MICROCHIP TECHNOLOGY

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

1500 WATT LOW VOLTAGE TRANSIENT

VOLTAGE SUPPRESSOR

Qualified per MIL-PRF-19500/500

T4-LDS-0 09 5 Rev . 2 (1 0 15 7 2) Page 1 of 5

DEVICES LEVELS

1N5907 JAN

JANTX

JANTXV

DESCRIPTION

DO-13 (DO-202A)

This unidirectional low voltage Transient Voltage Suppressor (TVS) device for the

1N5907 JEDEC registration has a high Peak Pulse Power rating of 1500 W with

extremely fast response times. The 1N5907 is available in a military qualified version

as described in the Features section herein. It’s most often used for protecting against

transients from inductive switching environments, induced RF effects, or induced

secondary lightning effects as found in surge levels of IEC61000-4-5 described herein.

It’s also very successful in protecting airborne avionics and electrical systems when

low voltage is required. Since their response time is virtually instantaneous, they can

also protect from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.

IMPORTANT: For the most current data, consult MICROSEMI’s website:

http://www.microsemi.com

FEATURES

¾ Unidirectional TVS for thru-hole mounting

¾ Suppresses transients up to 1500 watts @ 10/1000 µs (Figure 1) in less than 100

pico seconds

¾ Low working voltage (VWM) of 5 V

¾ Hermetic sealed DO-13 metal package for 1N5907

¾ JAN/TX/TXV military qualification available for 1N5907 per MIL-PRF-

19500/500 by adding JAN, JANTX, or JANTXV prefix, e.g. JANTXV1N5907

¾ Surface mount equivalent packages also available as SMCJ5.0 or SMCG5.0 in

separate data sheet (consult factory for other surface mount options)

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

T4-LDS-0 09 5 Rev . 2 (1 0 15 7 2) Page 2 of 5

APPLICATIONS / BENEFITS

¾ Protection from switching transients and induced RF

¾ Protects TTL, ECL, DTL, MOS, MSI, and other integrated circuits requiring 5.0 V or lower power supplies

¾ Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4

¾ Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance: Class 1 thru 4

¾ Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance: Class 1 thru 4

¾ Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance: Class 2 & 3

¾ 1N5907 Inherently radiation hard as described in Microsemi MicroNote 050

MAXIMUM RATINGS

¾ 1500 Watts for 10/1000 μs at lead temperature (TL) 25oC (See Figs. 1, 2, and 4) with repetition rate of 0.01% or

less*

¾ Operating & Storage Temperatures: -65o to +175oC for 1N5907

¾ THERMAL RESISTANCE (junction to lead): 50oC/W for 1N5907

¾ THERMAL RESISTANCE (junction to ambient): 110 oC/W for 1N5907

¾ DC Power Dissipation* (1N5907): 1 Watt at TL <125oC 3/8” (10 mm) from body, or 1 Watt at TA ≤+65oC

when mounted on FR4 PC board as described for thermal resistance junction to ambient

¾ Forward surge current: 200 A for 8.3ms half-sine wave at TA = +25oC

¾ Solder Temperatures: 260 o C for 10 s (maximum)

MECHANICAL AND PACKAGING

¾ CASE (1N5907): DO-13 (DO-202AA) welded hermetically sealed metal and glass

¾ FINISH: External metal surfaces are Tin-Lead (Sn-Pb) plated and solderable per MIL-STD-750 method 2026

¾ POLARITY: Polarity indicated by diode symbol or cathode band (cathode connected to case for 1N5907)

¾ MARKING: Part number and polarity symbol

¾ WEIGHT: 1.4 grams. (Approx)

¾ TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number)

¾ See package dimension on last page

* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage

(VWM) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region).

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

T4-LDS-0 09 5 Rev . 2 (1 0 15 7 2) Page 3 of 5

ELECTRICAL CHARACTERISTICS @ 25oC

JEDEC

Type

No.

Reverse

Standoff

Voltage

VWM

(NOTE 1)

Volts

Minimum

Breakdown

Voltage

V(BR) @ 1 mA

Volts

Maximum

Standby

Current

ID @ VWM

μA

Maximum

Clamping

Voltage

VC @ IPP1

(FIG. 3)

Volts

Peak Pulse

Current

IPP1

(FIG. 3)

Amps

Maximum

Clamping

Voltage

VC @ IPP2

(FIG. 3)

Volts

Peak Pulse

Current

IPP2

(FIG. 3)

Amps

Maximum

Clamping

Voltage VC @

IPP3

(FIG. 3)

Volts

Peak Pulse

Current

IPP3

(FIG. 3)

Amps

1N5907 * 5.0 6.0 300 7.6 30 8.0 60 8.5 120

* Also available in military qualified types with a JAN, JANTX, or JANTXV prefix per MIL-PRF-19500/500.

NOTE 1: A TVS is normally selected according to the reverse “Standoff Voltage” VWM which should be equal to or

greater than the dc or continuous peak operating voltage level.

SYMBOLS & DEFINITIONS

Symbol Definition

VWM Standoff Voltage: Applied Reverse Voltage to assure a nonconductive condition. (See Note 1 above)

V(BR) Breakdown Voltage: This is the Breakdown Voltage the device will exhibit at 25oC

VC

Maximum Clamping Voltage: The maximum peak voltage appearing across the TVS when subjected to

the peak pulse current in a one millisecond time interval. The peak pulse voltage is the combination of

voltage rise due to both the series resistance and thermal rise and positive temperature coefficient (αV(BR))

IPP Peak Pulse Current: The peak current during the impulse (See Figure 2)

PPP Peak Pulse Power: The pulse power as determined by the product of VC and IPP

ID Standby Current: The current at the standoff voltage (VWM)

I(BR) Breakdown Current: The current used for measuring Breakdown Voltage (V(BR))

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

T4-LDS-0 09 5 Rev . 2 (1 0 15 7 2) Page 4 of 5

GRAPHS

FIGURE 1 FIGURE 2

PEAK PULSE POWER VS. PULSE TIME DERATING CURVE

FIGURE 3

PULSE WAVEFORM FIGURE 4 TYPICAL CLAMPING VOLTAGE (VC)

VS. PEAK PULSE CURRENT (I

PP)

Test wave form

parameters

tr = 10 μs

tp = 1000 μs

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

T4-LDS-0 09 5 Rev . 2 (1 0 15 7 2) Page 5 of 5

PACKAGE DIMENSIONS

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. The major diameter is essentially constant along its length.

4. Within this zone, diameter may vary to allow for lead finishes

and irregularities.

5. Dimension to allow for pinch or seal deformation anywhere

along tubulation.

6. Lead 1 (cathode) shall be electrically connected to the case.

7. In accordance with ASME Y14.5M, diameters are equivalent

to φx symbology.

FIGURE 1. Physical dimensions (DO-13).

Dimensions

Symbol Inches Millimeters Notes

Min Max Min Max

BD .215 .235 5.46 5.97

BL .293 .357 7.44 9.07 3

BLT .570 14.48

CD .045 .100 1.14 2.54 5

LD .025 .035 0.64 0.89

LL 1.000 1.625 25.40 41.28 4

LU .188 4.78 4