BPW 34 B
BPW 34 BS
Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit; in SMT
Silicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT
Lead (Pb) Free Product - RoHS Compliant
BPW 34 B BPW 34 BS
2005-02-22 1
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 350 nm bis 1100 nm
• Kurze Schaltzeit (typ. 25 ns)
• DIL-Plastikbauform mit hoher Packungsdichte
Anwendungen
• Lichtschranken für Gleich- und
Wechsellichtbetrieb im sichtbaren Lichtbereich
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type
Bestellnummer
Ordering Code
BPW 34 B Q65110A3126
BPW 34 BS Q65110A2625
Features
• Especially suitable for applications from
350 nm to 1100 nm
• Short switching time (typ. 25 ns)
• DIL plastic package with high packing density
Applications
• Photointerrupters
• Industrial electronics
• For control and drive circuits
2005-02-22 2
BPW34B, BPW34BS
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
Top; Tstg – 40 … + 85 °C
Sperrspannung
Reverse voltage
VR32 V
Verlustleistung, TA = 25 °C
Total power dissipation
Ptot 150 mW
Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K)
Characteristics (TA = 25 °C, standard light A, T = 2856 K)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Fotoempfindlichkeit, VR = 5 V
Spectral sensitivity
S75 nA/Ix
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
λS max 850 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ350 … 1100 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area
A 7.45 mm2
Abmessung der bestrahlungsempfindlichen Fläche
Dimensions of radiant sensitive area
L×B
L×W
2.73 ×2.73 mm ×mm
Halbwinkel
Half angle
ϕ±60 Grad
deg.
Dunkelstrom, VR = 10 V
Dark current
IR2 (≤ 30) nA
Spektrale Fotoempfindlichkeit, λ = 400 nm
Spectral sensitivity
Sλ0.2 A/W
Quantenausbeute, λ = 400 nm
Quantum yield
η0.62 Electrons
Photon
Leerlaufspannung, Ev = 1000 Ix
Open-circuit voltage
VO390 mV
BPW34B, BPW34BS
2005-02-22 3
Kurzschlussstrom
Short-circuit current
Ee = 0.5 mW/cm2, λ = 400 nm
ISC 7.4 (≥ 5.4) µA
Anstiegs- und Abfallzeit des Fotostroms
Rise and fall time of the photocurrent
RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA
tr, tf25 ns
Durchlassspannung, IF = 100 mA, E = 0
Forward voltage
VF1.3 V
Kapazität, VR = 0 V, f = 1 MHz, E = 0
Capacitance
C072 pF
Temperaturkoeffizient von VO
Temperature coefficient of VO
TCV– 2.6 mV/K
Temperaturkoeffizient von ISC
Temperature coefficient of ISC
TCI0.18 %/K
Rauschäquivalente Strahlungsleistung
Noise equivalent power
VR = 10 V, λ = 400 nm
NEP 1.3 ×10– 13
Nachweisgrenze, VR = 10 V, λ = 400 nm
Detection limit
D* 2.1 ×1012
Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K)
Characteristics (TA = 25 °C, standard light A, T = 2856 K) (cont’d)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
W
Hz
------------
cm Hz×
W
---------------------------
BPW34B, BPW34B
2005-02-22 4
Relative Spectral Sensitivity
Srel = f (λ)
Dark Current
IR = f (VR), E = 0
Directional Characteristics
Srel = f (ϕ)
λ
OHF01001
0
rel
S
400 600 800 1000 1200
20
40
60
80
%
100
nm
0
OHF00080
Ι
R
R
V
05 10 15 V 20
1000
2000
3000
4000
pA
OHF01402
90
80
70
60
50
40 30 20 10
20 40 60 80 100 1200.40.60.81.0
ϕ
0.2
0.4
0.6
0.8
1.0
100 0
0
0
Photocurrent IP = f (Ev), VR = 5 V
Open-Circuit Voltage VO = f (Ev)
Capacitance
C = f (VR), f = 1 MHz, E = 0
E
OHF01066
V
0
10
P
Ι
-1
10
10
1
10
2
10
4
10
0
10
1
10
2
10
34
10
3
10
2
10
1
10
10
0
V
O
µ
AmV
Ι
P
V
O
10
3
lx
V
OHF00081
R
-2
10
C
0-1
10 0
10 1
10 2
10V
10
20
30
40
50
60
70
80
pF
100
Total Power Dissipation
Ptot = f (TA)
Dark Current
IR = f (TA), VR = 5 V, E = 0
T
OHF00958
A
0
tot
P
020 40 60 80 ˚C 100
mW
20
40
60
80
100
120
140
160
T
OHF00082
A
-1
10 0
R
Ι
10
0
10
1
10
2
10
3
nA
20 40 60 80 ˚C 100
BPW34B, BPW34BS
2005-02-22 5
Maßzeichnung
Package Outlines
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
GEOY6643
4.0 (0.157)
3.7 (0.146) 4.3 (0.169)
4.5 (0.177)
5.4 (0.213)
4.9 (0.193)
0.6 (0.024)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
1.2 (0.047)
0.7 (0.028)
0.3 (0.012)
0.5 (0.020)
0.8 (0.031)
0.6 (0.024)
Cathode marking
0.6 (0.024)
0.8 (0.031)
1.9 (0.075)
2.2 (0.087)
3.0 (0.118)
3.5 (0.138)
0.6 (0.024)
0.4 (0.016)
Chip position
0.4 (0.016)
0.6 (0.024)
0.35 (0.014)
0.2 (0.008)
0 ... 5˚
5.08 (0.200)
spacing
1.4 (0.055)
Photosensitive area
2.65 (0.104) x 2.65 (0.104)
1.8 (0.071)
BPW 34 B
4.5 (0.177)
4.3 (0.169)
4.0 (0.157)
3.7 (0.146)
1.5 (0.059)
1.7 (0.067)
0.9 (0.035)
0.7 (0.028)
Photosensitive area Cathode lead
GEOY6863
0.3 (0.012)
6.7 (0.264)
6.2 (0.244)
1.2 (0.047)
1.1 (0.043)
(0...0.004)
0...5˚
0.2 (0.008)
0.1 (0.004)
1.1 (0.043)
0.9 (0.035)
2.65 (0.104) x 2.65 (0.104)
1.8 (0.071)±0.2 (0.008)
Chip position
0...0.1
BPW 34 BS
2005-02-22 6
BPW34B, BPW34BS
Lötbedingungen BPW 34 BS Vorbehandlung nach JEDEC Level 4
Soldering Conditions Preconditioning acc. to JEDEC Level 4
IR-Reflow Lötprofil für bleifreies Löten (nach J-STD-020B)
IR Reflow Soldering Profile for lead free soldering (acc. to J-STD-020B)
Wellenlöten (TTW) BPW 34 B (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
OHLA0687
0
0
T
t
˚C
s
120 s max
50
100
150
200
250
300
Ramp Up
100 s max
50 100 150 200 250 300
Ramp Down
6 K/s (max)
3 K/s (max)
25 ˚C
30 s max
260 ˚C
+0 ˚C
-5 ˚C
245 ˚C
±5 ˚C
240 ˚C
255 ˚C
217 ˚C
Maximum Solder Profile
Recommended Solder Profile
235 ˚C
-0 ˚C
+5 ˚C
Minimum Solder Profile
10 s min
min. condition for IR Reflow Soldering:
solder point temperature ≥ 235 °C for at least 10 sec.
OHLY0598
0
0
50 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
BPW34B, BPW34BS
2005-02-22 7
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
