AUIRF7342QTR - INFINEON TECHNOLOGIES AG

AUIRF7342Q

VDSS -55V

RDS(on) max. 0.105

ID -3.4A

Description

Specifically designed for Automotive applications, this cellular design of

HEXFET® Power MOSFETs utilizes the latest processing techniques

to achieve low on-resistance per silicon area. This benefit combined

with the fast switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in Automotive

and a wide variety of other applications.

Features

 Advanced Planar Technology

 Low On-Resistance

 Logic Level Gate Drive

 Dual P Channel MOSFET

 Dynamic dv/dt Rating

 150°C Operating Temperature

 Fast Switching

 Fully Avalanche Rated

 Lead-Free, RoHS Compliant

 Automotive Qualified *

1 2015-9-30

HEXFET® is a registered trademark of Infineon.

*Qualification standards can be found at www.infineon.com



AUTOMOTIVE GRADE

Symbol Parameter Max. Units

VDS Drain-Source Voltage -55 V

ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.4

A 

ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -2.7

IDM Pulsed Drain Current  -27

PD @TA = 25°C Maximum Power Dissipation  2.0

W 

PD @TA = 70°C Maximum Power Dissipation 1.3

Linear Dearating Factor 0.016 mW°/C

VGS Gate-to-Source Voltage ± 20 V

VGSM Gate-to-Source Voltage Single Pulse tp < 10µs 30

EAS Single Pulse Avalanche Energy (Thermally Limited)  114

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

TJ Operating Junction and -55 to + 150 °C

TSTG Storage Temperature Range

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance

and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless

otherwise specified.

Thermal Resistance 

Symbol Parameter Typ. Max. Units

°C/W

RJA Junction-to-Ambient  ––– 62.5

SO-8

AUIRF7342Q

Base part number Package Type Standard Pack Orderable Part Number

Form Quantity

AUIRF7342Q SO-8 Tape and Reel 4000 AUIRF7342QTR

G D S

Gate Drain Source

Top View

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Notes:

 Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11)

 Starting TJ = 25°C, L = 20mH, RG = 25, IAS = -3.4A. (See Fig. 8)

ISD -3.4A, di/dt 150A/µs, VDD V(BR)DSS, TJ  150°C.

 Pulse width 300µs; duty cycle  2%.

 When mounted on 1" square copper board , t 10sec.

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– -0.054 ––– V/°C Reference to 25°C, ID = -1mA

RDS(on) Static Drain-to-Source On-Resistance ––– 0.095 0.105  VGS = -10V, ID = -3.4A 

––– 0.150 0.170 VGS = -4.5V, ID = -2.7A 

VGS(th) Gate Threshold Voltage -1.0 ––– -3.0 V VDS = VGS, ID = -250µA

gfs Forward Trans conductance 3.3 ––– ––– S VDS = -10V, ID = -3.1A

IDSS Drain-to-Source Leakage Current ––– ––– -2.0 µA VDS = -55V, VGS = 0V

––– ––– -25 VDS = -55V,VGS = 0V,TJ =55°C

IGSS Gate-to-Source Forward Leakage ––– ––– -100 nA VGS = -20V

Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Qg Total Gate Charge ––– 26 38

nC 

ID = -3.1A

Qgs Gate-to-Source Charge ––– 3.0 4.5

VDS = -44V

Qgd Gate-to-Drain Charge ––– 8.4 13 VGS = -10V, See Fig.10 

td(on) Turn-On Delay Time ––– 14 22

VDD = -28V

tr Rise Time ––– 10 15 ID = -1.0A

td(off) Turn-Off Delay Time ––– 43 64 RG = 6.0

tf Fall Time ––– 22 32 RD = 16

Ciss Input Capacitance ––– 690 –––

pF 

VGS = 0V

Coss Output Capacitance ––– 210 ––– VDS = -25V

Crss Reverse Transfer Capacitance ––– 86 ––– ƒ = 1.0MHz, See Fig.9

Diode Characteristics 

Parameter Min. Typ. Max. Units Conditions

IS Continuous Source Current ––– ––– -2.0

MOSFET symbol

(Body Diode) showing the

ISM Pulsed Source Current ––– ––– -27 integral reverse

(Body Diode) p-n junction diode.

VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C,IS = -2.0A,VGS = 0V 

trr Reverse Recovery Time ––– 54 80 ns TJ = 25°C ,IF = -2.0A,

Qrr Reverse Recovery Charge ––– 85 130 nC di/dt = 100A/µs 

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Fig. 2 Typical Output Characteristics

Fig. 3 Typical Output Characteristics

Fig. 1 Typical Output Characteristics

0.1 110 100 1000

-VDS, Drain-to-Source Voltage (V)

0.1

100

-ID, Drain-to-Source Current (A)

VGS

TOP -15V

-12V

-10V

-8.0V

-4.5V

-4.0V

-3.5V

BOTTOM -3.0V

60µs PULSE WIDTH

Tj = -40°C

-3.0V

0.1 110 100 1000

-VDS, Drain-to-Source Voltage (V)

0.1

100

-ID, Drain-to-Source Current (A)

VGS

TOP -15V

-12V

-10V

-8.0V

-4.5V

-4.0V

-3.5V

BOTTOM -3.0V

60µs PULSE WIDTH

Tj = 25°C

-3.0V

0.1 110 100 1000

-VDS, Drain-to-Source Voltage (V)

0.1

100

-ID, Drain-to-Source Current (A)

-3.0V

60µs PULSE WIDTH

Tj = 150°C

VGS

TOP -15V

-12V

-10V

-8.0V

-4.5V

-4.0V

-3.5V

BOTTOM -3.0V

Fig. 4 Typical Transfer Characteristics

1 2 3 4 5 6 7

-VGS, Gate-to-Source Voltage (V)

0.1

100

-ID, Drain-to-Source Current (A)

TJ = -40°C

TJ = 25°C

TJ = 150°C

VDS = -25V

60µs PULSE WIDTH

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Fig 5. Normalized On-Resistance

Vs. Temperature

Fig 6. Typical On-Resistance Vs. Drain

Current



Fig 8. Maximum Avalanche Energy

Vs. Drain Current

Fig. 7 Typical On-Resistance Vs. Gate Voltage

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

-10V

-3.4 A

25 50 75 100 125 150

100

150

200

250

300

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

-1.5A

-2.7A

-3.4A

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Fig. 11 Typical Source-Drain Diode

Forward Voltage

Fig 9. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig. 12 Maximum Safe Operating Area

Fig 10. Typical Gate Charge Vs.

Gate-to-Source Voltage

1 10 100

240

480

720

960

1200

-V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

0V,

f = 1MHz

+ C

C SHORTED

iss gs gd , ds

rss gd

oss ds gd

iss

oss

rss

010 20 30 40

Q , Total Gate Charge (nC)

-V , Gate-to-Source Voltage (V)

I =

D-3.1A

V =-12V

V =-30V

V =-48V

0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4

-VSD, Source-to-Drain Voltage (V)

1.0

100

-ISD, Reverse Drain Current (A)

VGS = 0V

TJ = -40°C

TJ = 25°C

TJ = 150°C

110100

-VDS , Drain-toSource Voltage (V)

0.1

100

-ID, Drain-to-Source Current (A)

Tc = 25°C

Tj = 150°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100µsec

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Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 13. Maximum Drain Current vs.

Ambient Temperature

25 50 75 100 125 150

TA , Ambient Temperature (°C)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

-ID, Drain Current (A)

0.1

100

0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJA A

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

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

SO-8 Part Marking Information

SO-8 Package Outline (Dimensions are shown in millimeters (inches)

.189

.1497

0°

.013

.050 BASIC

.0532

.0040

.2284

.0099

.016

.1968

.1574

8°

.020

.0688

.0098

.2440

.0196

.050

4.80

3.80

0.33

1.35

0.10

5.80

0.25

0.40

0°

1.27 BASIC

5.00

4.00

0.51

1.75

0.25

6.20

0.50

1.27

MIN MAX

MILLIMETERSIN C H ES

MIN MAX

DIM

8°

c .0075 .0098 0.19 0.25

.025 BASIC 0.635 BASIC

D B

0.25 [.010] A

K x 45°

8X L 8X c

0.25 [.010] C AB

8X b

0.10 [.004]

4312

FOOTPRINT

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050]

4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.

N O TES:

1. D IM EN SIO N IN G & TO LERAN C IN G PER ASM E Y14.5M -1994.

2. CONTROLLING DIMENSION: MILLIMETER

3. DIMENSIONS ARE SHOWN IN MILLIM ETERS [INCHES].

5 DIM EN SIO N D O ES N O T INC LU D E M O LD PRO TRUSIO N S.

6 DIM EN SIO N D O ES N O T INC LU D E M O LD PRO TRUSIO N S.

M O LD PRO TRU SIO N S N O T TO EXC EED 0.25 [.010].

7 D IM EN SIO N IS TH E LEN G TH O F LEAD FO R SO LD ER IN G TO

A S U B S T R A T E .

M O LD PRO TRU SIO N S N O T TO EXC EED 0.15 [.006].

8X 1.78 [.070]

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SO-8 Tape and Reel (Dimensions are shown in millimeters (inches)

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

AUIRF7342Q

9 2015-9-30



Qualification Information

Qualification Level

Automotive

(per AEC-Q101)

Comments: This part number(s) passed Automotive qualification. Infineon’s

Industrial and Consumer qualification level is granted by extension of the higher

Automotive level.

Moisture Sensitivity Level SO-8 MSL1

ESD

Machine Model Class M2 (+/- 200V)†

AEC-Q101-002

Human Body Model Class H1A (+/- 500V)†

AEC-Q101-001

Charged Device Model Class C5 (+/- 1125V)†

AEC-Q101-005

RoHS Compliant Yes

Published by

Infineon Technologies AG

81726 München, Germany

IMPORTANT NOTICE

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics

(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any

information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and

liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third

party.

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this

document and any applicable legal requirements, norms and standards concerning customer’s products and any use of

the product of Infineon Technologies in customer’s applications.

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of

customer’s technical departments to evaluate the suitability of the product for the intended application and the

completeness of the product information given in this document with respect to such application.

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies office (www.infineon.com).

WARNINGS

Due to technical requirements products may contain dangerous substances. For information on the types in question

please contact your nearest Infineon Technologies office.

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized

representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a

failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.

Revision History

Date Comments

9/30/2015  Updated datasheet with corporate template

 Corrected ordering table on page 1.

3/27/2014  Added "Logic Level Gate Drive" bullet in the features section on page 1

 Updated data sheet with new IR corporate template

† Highest passing voltage.