ON Semiconductor NPN TIP35A Complementary Silicon High-Power Transistors TIP35B * TIP35C * . . . for general-purpose power amplifier and switching applications. PNP * 25 A Collector Current TIP36A * Low Leakage Current -- TIP36B * TIP36C * ICEO = 1.0 mA @ 30 and 60 V * Excellent DC Gain -- hFE = 40 Typ @ 15 A * High Current Gain Bandwidth Product -- *ON Semiconductor Preferred Device hfe = 3.0 min @ IC = 1.0 A, f = 1.0 MHz IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII III IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII III IIII III IIII IIIIIIIIIII III IIII III IIII III IIIIIIIIIII III IIII III IIII III IIIIIIIIIII III IIIIIIIII III IIII III IIII IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III MAXIMUM RATINGS Symbol TIP35A TIP36A TIP35B TIP36B TIP35C TIP36C Unit VCEO 60 V 80 V 100 V Vdc Collector-Base Voltage VCB 60 V 80 V 100 V Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current -- Continuous Peak (1) IC 25 40 Adc Base Current -- Continuous IB 5.0 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 125 1.0 Watts W/C TJ, Tstg -65 to +150 C ESB 90 mJ Rating Collector-Emitter Voltage Operating and Storage Junction Temperature Range Unclamped Inductive Load 25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 125 WATTS CASE 340D-02 TO-218AC THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RJC 1.0 C/W Junction-To-Free-Air Thermal Resistance RJA 35.7 C/W (1) Pulse Test: Pulse Width = 10 ms, Duty Cycle 10%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2002 January, 2002 - Rev. 4 1 Publication Order Number: TIP35A/D TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C PD, POWER DISSIPATION (WATTS) 125 100 75 50 25 0 0 25 50 75 125 100 TC, CASE TEMPERATURE (C) 150 175 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III Figure 1. Power Derating ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 60 80 100 -- -- -- -- -- 1.0 1.0 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 30 mA, IB = 0) Collector-Emitter Cutoff Current (VCE = 30 V, IB = 0) (VCE = 60 V, IB = 0) VCEO(sus) TIP35A, TIP36A TIP35B, TIP36B TIP35C, TIP36C Vdc ICEO TIP35A, TIP36A TIP35B, TIP35C, TIP36B, TIP36C mA Collector-Emitter Cutoff Current (VCE = Rated VCEO, VEB = 0) ICES -- 0.7 mA Emitter-Base Cutoff Current (VEB = 5.0 V, IC = 0) IEBO -- 1.0 mA 25 15 -- 75 -- -- 1.8 4.0 -- -- 2.0 4.0 ON CHARACTERISTICS (1) DC Current Gain (IC = 1.5 A, VCE = 4.0 V) (IC = 15 A, VCE = 4.0 V) hFE Collector-Emitter Saturation Voltage (IC = 15 A, IB = 1.5 A) (IC = 25 A, IB = 5.0 A) VCE(sat) Base-Emitter On Voltage (IC = 15 A, VCE = 4.0 V) (IC = 25 A, VCE = 4.0 V) VBE(on) -- Vdc Vdc DYNAMIC CHARACTERISTICS Small-Signal Current Gain (IC = 1.0 A, VCE = 10 V, f = 1.0 kHz) hfe 25 -- -- Current-Gain -- Bandwidth Product (IC = 1.0 A, VCE = 10 V, f = 1.0 MHz) fT 3.0 -- MHz (1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. http://onsemi.com 2 TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C VCC TURN-ON TIME RL +2.0 V 0 tr 20 ns 3.0 TO SCOPE tr 20 ns 10 RB -11.0 V -30 V 2.0 10 TO 100 S DUTY CYCLE 2.0% RL +9.0 V RB tr 20 ns 10 to 100 s DUTY CYCLE 2.0% VBB 3.0 TO SCOPE tr 20 ns 10 -11.0 V 0.7 0.5 -30 V t, TIME (s) VCC TURN-OFF TIME 0 TJ = 25C IC/IB = 10 VCC = 30 V VBE(off) = 2 V 1.0 tr 0.3 0.2 0.07 0.05 +4.0 V 0.03 0.02 0.3 FOR CURVES OF FIGURES 3 & 4, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN, REVERSE ALL POLARITIES. 2.0 3.0 0.5 0.7 1.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) Figure 2. Switching Time Equivalent Test Circuits t, TIME (s) ts 2.0 0.1 0.3 0.5 0.7 500 200 TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2 ts 1.0 0.7 0.5 0.2 30 1000 (PNP) (NPN) 3.0 0.3 20 Figure 3. Turn-On Time hFE , DC CURRENT GAIN 10 7.0 5.0 (PNP) (NPN) td 0.1 tf tf 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) VCE = 4.0 V TJ = 25C 100 50 20 10 PNP NPN 5.0 2.0 20 1.0 30 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (AMPS) Figure 5. DC Current Gain Figure 4. Turn-Off Time http://onsemi.com 3 50 100 TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C 100 FORWARD BIAS IC, COLLECTOR CURRENT (AMPS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25C. Second breakdown limitations do not derate the same as thermal limitations. 300s 50 30 20 10 10ms 5.0 2.0 dc SECONDARY BREAKDOWN THERMAL LIMIT BONDING WIRE LIMIT 1.0 0.5 0.3 0.2 0 REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 7 gives RBSOA characteristics. TC = 25C 1.0ms TIP35A, 36A TIP35B, 36B TIP35C, 36C 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 Figure 6. Maximum Rated Forward Bias Safe Operating Area IC, COLLECTOR CURRENT (AMPS) 40 30 TJ 100C 25 20 15 TIP35B TIP36B 10 TIP35A TIP36A 5.0 0 TIP35C TIP36C 0 10 20 30 50 70 90 40 60 80 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Maximum Rated Forward Bias Safe Operating Area http://onsemi.com 4 100 TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C TEST CIRCUIT VCE MONITOR RBB1 MJE180 INPUT L1 (SEE NOTE A) TUT 20 L2 (SEE NOTE A) 50 RBB2 = 100 50 VCC = 10 V + IC MONITOR VBB2 = 0 VBB1 = 10 V - RS = 0.1 + VOLTAGE AND CURRENT WAVEFORMS 5.0 V INPUT VOLTAGE tw = 6.0 ms (SEE NOTE B) 0 100 ms COLLECTOR CURRENT 0 -3.0 A 0 -10 V COLLECTOR VOLTAGE V(BR)CER NOTES: A. L1 and L2 are 10 mH, 0.11 , Chicago Standard Transformer Corporation C-2688, or equivalent. B. Input pulse width is increased until ICM = -3.0 A. C. For NPN, reverse all polarities. Figure 8. Inductive Load Switching http://onsemi.com 5 TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C PACKAGE DIMENSIONS CASE 340D-02 ISSUE E C Q B U S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. E 4 DIM A B C D E G H J K L Q S U V A L 1 K 2 3 D J H V MILLIMETERS MIN MAX --20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF STYLE 1: PIN 1. 2. 3. 4. G http://onsemi.com 6 BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX --0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C Notes http://onsemi.com 7 TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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