TIP35A - ON Semiconductor

Complementary Silicon

High-Power Transistors

...for general–purpose power amplifier and switching

applications.

•25 A Collector Current

•Low Leakage Current —

ICEO = 1.0 mA @ 30 and 60 V

•Excellent DC Gain —

hFE = 40 Typ @ 15 A

•High Current Gain Bandwidth Product —

hfe = 3.0 min @ IC

= 1.0 A, f = 1.0 MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎ

Î

ÎÎÎ

Symbol

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

TIP35A

TIP36A

ÎÎÎ

Î

ÎÎÎ

TIP35B

TIP36B

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

TIP35C

TIP36C

ÎÎÎ

Î

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎ

VCEO

ÎÎÎÎ

60 V

ÎÎÎ

80 V

ÎÎÎÎ

100 V

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎ

VCB

ÎÎÎÎ

60 V

ÎÎÎ

80 V

ÎÎÎÎ

100 V

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎ

VEB

ÎÎÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak (1)

ÎÎÎ

IC

ÎÎÎÎÎÎÎÎÎ

25

40

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

ÎÎÎ

IB

ÎÎÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation

@ TC = 25C

Derate above 25C

ÎÎÎ

Î

ÎÎÎ

PD

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

125

1.0

ÎÎÎ

Î

ÎÎÎ

Watts

W/C

ÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎ

Î

ÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

Î

ÎÎÎ

C

ÎÎÎÎÎÎÎÎÎÎÎ

Unclamped Inductive Load

ÎÎÎ

ESB

ÎÎÎÎÎÎÎÎÎ

90

ÎÎÎ

mJ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

1.0

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Junction–To–Free–Air Thermal Resistance

ÎÎÎÎÎ

RθJA

ÎÎÎÎÎÎ

35.7

ÎÎÎ

C/W

(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle  10%.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductor

 Semiconductor Components Industries, LLC, 2002

January, 2002 – Rev. 4 1Publication Order Number:

TIP35A/D

TIP35A

TIP35B

TIP35C

TIP36A

TIP36B

TIP36C

25 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60–100 VOLTS

125 WATTS

*ON Semiconductor Preferred Device

*

NPN

PNP *

*

CASE 340D–02

TO–218AC

TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C

http://onsemi.com

2

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

0 125

0

25

175

75

100

75 100

50

125

25 150

PD, POWER DISSIPATION (WATTS)

50

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mA, IB = 0) TIP35A, TIP36A

TIP35B, TIP36B

TIP35C, TIP36C

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

Î

ÎÎÎ

60

80

100

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Cutoff Current

(VCE = 30 V, IB = 0) TIP35A, TIP36A

(VCE = 60 V, IB = 0) TIP35B, TIP35C, TIP36B, TIP36C

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICEO

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1.0

ÎÎÎ

Î

ÎÎÎ

mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Cutoff Current

(VCE = Rated VCEO, VEB = 0)

ÎÎÎÎÎ

ICES

ÎÎÎ

—

ÎÎÎÎ

0.7

ÎÎÎ

mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Cutoff Current

(VEB = 5.0 V, IC = 0)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

IEBO

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1.0

ÎÎÎ

Î

ÎÎÎ

mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 1.5 A, VCE = 4.0 V)

(IC = 15 A, VCE = 4.0 V)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

hFE

ÎÎÎ

Î

ÎÎÎ

25

15

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

75

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 15 A, IB = 1.5 A)

(IC = 25 A, IB = 5.0 A)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCE(sat)

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1.8

4.0

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 15 A, VCE = 4.0 V)

(IC = 25 A, VCE = 4.0 V)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VBE(on)

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

2.0

4.0

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 1.0 A, VCE = 10 V, f = 1.0 kHz)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

hfe

ÎÎÎ

Î

ÎÎÎ

25

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product

(IC = 1.0 A, VCE = 10 V, f = 1.0 MHz)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

fT

ÎÎÎ

Î

ÎÎÎ

3.0

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

MHz

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle  2.0%.

TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C

http://onsemi.com

3

Figure 2. Switching Time Equivalent Test Circuits

0.3

Figure 3. Turn–On Time

IC, COLLECTOR CURRENT (AMPERES)

0.02

1.0 30

0.07

1.0

10

TJ = 25°C

IC/IB = 10

VCC = 30 V

VBE(off) = 2 V

t, TIME (s)µ

0.5

0.3

0.1

0.05

0.5 3.0 5.0

0.03

0.7

2.0

0.7 7.0

tr

0.2

2.0 20

td

(PNP)

(NPN)

TURN–ON TIME

TURN–OFF TIME

+2.0 V

0

tr ≤

20 ns

-11.0 V

10 TO 100 µS

3.0RL

-30 VVCC

DUTY CYCLE ≈ 2.0%

10

RB

TO SCOPE

tr ≤ 20 ns

VBB +4.0 V

FOR CURVES OF FIGURES 3 & 4, RB & RL ARE VARIED.

INPUT LEVELS ARE APPROXIMATELY AS SHOWN.

FOR NPN, REVERSE ALL POLARITIES.

0

+9.0 V

-11.0 V

10 to 100 µs

tr ≤ 20 ns

DUTY CYCLE ≈ 2.0%

3.0RL

-30 VVCC

10

RB

TO SCOPE

tr ≤ 20 ns

0.5 1.0 2.0 7.00.3 3.0 5.00.7

IC, COLLECTOR CURRENT (AMPERES)

Figure 4. Turn–Off Time

10

t, TIME (s)µ

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1

10 20 30

TJ = 25°C

VCC = 30 V

IC/IB = 10

IB1 = IB2

ts

tf

(PNP)

(NPN)

ts

tf

IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

Figure 5. DC Current Gain

200

500

0.2 0.5 2.0 1000.1

100

50

20

10

1.0

VCE = 4.0 V

TJ = 25°C

5.0

10 205.0 50

PNP

NPN

1000

2.0

1.0

TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C

http://onsemi.com

4

FORWARD BIAS

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC – VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 6 is based on TC = 25C; TJ(pk) is

variable depending on power level. Second breakdown

pulse limits are valid for duty cycles to 10% but must be

derated when TC  25C. Second breakdown limitations do

not derate the same as thermal limitations.

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn–off, in most cases,

with the base to emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished b y several means such as active clamping, RC

snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Bias Safe Operating Area

and represents the voltage–current conditions during

reverse biased turn–off. This rating is verified under

clamped conditions so that the device is never subjected to

an avalanche mode. Figure 7 gives RBSOA characteristics.

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

7.0 201.0 50 100

0.2

0

0.5

SECONDARY BREAKDOWN

THERMAL LIMIT

BONDING WIRE LIMIT

1.0ms

dc

300µs

2.0

1.0

100

30

IC, COLLECTOR CURRENT (AMPS)

10ms

Figure 6. Maximum Rated Forward Bias

Safe Operating Area

50

20

10

5.0

0.3

2.0 3.0 5.0 10 30 70

TC = 25°C

TIP35A, 36A

TIP35B, 36B

TIP35C, 36C

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

40 600 80 100

5.0

0

15

20

40

30

IC, COLLECTOR CURRENT (AMPS)

Figure 7. Maximum Rated Forward Bias

Safe Operating Area

25

10

10 20 30 50 70 90

TJ ≤ 100°C

TIP35A

TIP36A

TIP35B

TIP36B

TIP35C

TIP36C

TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C

http://onsemi.com

5

Figure 8. Inductive Load Switching

TEST CIRCUIT

VOLTAGE AND CURRENT WAVEFORMS

NOTES:

A. L1 and L2 are 10 mH, 0.11 Ω, Chicago Standard Transformer Corporation C–2688, or equivalent.

B. Input pulse width is increased until ICM = –3.0 A.

C. For NPN, reverse all polarities.

INPUT

50

MJE180 RBB1

20

RBB2 = 100

VBB2 = 0

VBB1 = 10 V

VCE MONITOR

L1

(SEE NOTE A)

L2

(SEE NOTE A)

TUT

VCC = 10 V

IC MONITOR

+

-

RS = 0.1 Ω

50

+

-

5.0 V

0

-3.0 A

-10 V

tw = 6.0 ms

(SEE NOTE B)

INPUT

VOLTAGE

COLLECTOR

CURRENT

COLLECTOR

VOLTAGE

V(BR)CER

0

100 ms

TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C

http://onsemi.com

6

PACKAGE DIMENSIONS

CASE 340D–02

ISSUE E

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

A

D

VG

K

SL

U

BQ

123

4

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

EC

J

H

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A--- 20.35 --- 0.801

B14.70 15.20 0.579 0.598

C4.70 4.90 0.185 0.193

D1.10 1.30 0.043 0.051

E1.17 1.37 0.046 0.054

G5.40 5.55 0.213 0.219

H2.00 3.00 0.079 0.118

J0.50 0.78 0.020 0.031

K31.00 REF 1.220 REF

L--- 16.20 --- 0.638

Q4.00 4.10 0.158 0.161

S17.80 18.20 0.701 0.717

U4.00 REF 0.157 REF

V1.75 REF 0.069

TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C

http://onsemi.com

7

Notes

TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C

http://onsemi.com

8

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without further notice to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular

purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,

including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be

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TIP35A/D

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