-
TOP
+ NC
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BACK
NC +
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate DIODE
MMBD4148M SWITCHING DIODE
DESCRIPTION
Epitaxial planar Silicon diode
FEATURES
Fast Switching Speed
Ultra-Small Surface Mount Package
For General Purpose Switching Applications
High Conductance
Lead Free Product
APPLICATION
High Conductance Ultra Fast Diode
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: A2
-
A2
+ NC
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Parameter Symbol Limite Unit
Non-Repetitive Peak re verse voltage VRM 100 V
Peak Repetitive Peak reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
75 V
RMS Reverse Vo ltage VR(RMS) 53 V
Forward Continuous Current IFM 300 mA
Average Rectified Output Current IO 150 mA
Peak forward surg e current @=1.0µs
@=1.0s IFSM 2.0
1.0 A
Power Dissipation PD 150 mW
Thermal Resistance Junction to Ambient RθJA 625 ℃/W
Junction temperature Tj 125 ℃
Storage temperature TSTG -65~+150 ℃
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
1. ANODE
2. NC
3.CATHODE
Electrical Ratings @TA=25℃
Parameter Symbol Min. Typ. Max. Unit. Conditions
VF1 0.715 V IF=1mA
VF2 0.855 V IF=10mA
VF3 1.0 V IF=50mA
Forward voltage
VF4 1.25 V IF=150mA
IR1 1 µA VR=75V
Reverse current IR2 25 nA VR=20V
Capacitance between terminals CT 2 pF VR=0V,f=1MHz
Reverse Recovery Time trr 4 ns IF=IR=10mA
Irr=0.1XIR,RL=100Ω
Typical Characteristics MMBD4148M
Min. Max. Min. Max.
A 0.450 0.550 0.018 0.022
A1 0.010 0.090 0.000 0.004
b 0.170 0.270 0.007 0.011
b1 0.270 0.370 0.011 0.015
b2
D 1.150 1.250 0.045 0.049
E 1.150 1.250 0.045 0.049
D2
E2
e
L
L1
L2
k
z 0.090 REF. 0.004 RE F.
0.230 REF.
0.150 REF. 0.009 RE F.
0.010 RE F.
0.300 REF. 0.012 RE F.
0.280 REF. 0.011 RE F.
0.006 RE F.
Symbol D imensions In M illimeters D imensions In Inches
0.800 TYP . 0.032 TYP.
0.470 REF.
0.810 REF. 0.002 RE F.
0.032 RE F.
0.250 RE F.
