LITE-ON SEMICONDUCTOR S12M15-B SERIES SCRs 12 AMPERES RMS 400 thru 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-220AB FEATURES Blocking Voltage to 600 Volts On-State Current Rating of 12 Amperes RMS at 80 Rugged, Economical TO220AB Package Glass Passivated Junctions for Reliability and Uniformity Minimum and Maximum Values of IGT, VGT an IH Specified for Ease of Design High Immunity to dv/dt - 100 V/msec Minimum at 125 Pb-Free Package B L M C D A K E PIN 1 2 3 F O G I J MECHANICAL DATA N H H Case: Molded plastic Weight: 0.07 ounces, 2.0 grams TO-220AB MAX. MIN. DIM. A 14.22 15.88 B 10.67 9.65 C 3.43 2.54 D 5.84 6.86 E 9.28 8.26 F 6.35 G 14.73 12.70 H 2.79 2.29 I 0.51 1.14 J 0.40 0.67 K 3.53 4.09 L 3.56 4.83 M 1.14 1.40 N 2.92 2.03 O 1.17 1.37 All Dimensions in millimeter PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate 4 Anode MAXIMUM RATINGS (Tj= 25 unless otherwise noticed) Rating Symbol Value Unit VDRM, VRRM 400 600 Volts IT(RMS) 12 Amp ITSM 125 120 Amp I t 2 64 72 As PGM 5.0 Watt PG(AV) 0.5 Watt Forward Peak Gate Current (Pulse Width 1.0us,Tc=80 ) IGM 2.0 Amp Operating Junction Temperature Range TJ -40 to +125 Tstg -40 to +150 Peak Repetitive Off- State Voltage (TJ= -40 to 125 , Sine Wave, 50 to 60 Hz; Gate Open) S12M15-400B S12M15-600B On-State RMS Current (180 Conduction Angles,Tc=80 ) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz,Tj = 25 ) (1/2 Cycle, Sine Wave 50 Hz,Tj = 25 ) Circuit Fusing Consideration (t = 8.3 ms) (t = 10 ms) Forward Peak Gate Power (Pulse Width 1.0us,TJ = 80 ) Forward Average Gate Power (t=8.3ms,Tc = 80 ) Storage Temperature Range Notice: (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded 2 REV. 9,Mar-2010, KTXC01 RATING AND CHARACTERISTIC CURVES S12M15-B SERIES THERMAL CHARACTERISTICS Characteristic Thermal Resistance - Junction to Case - Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8" from Case for 10 Seconds Symbol Value Unit RthJC RthJA 2.2 62.5 /W TL 260 ELECTRICAL CHARACTERISTICS (TJ=25 unless otherwise noted) Characteristics Symbol Min Typ Max Unit IDRM IRRM ------- ------- 10 2.0 uA mA OFF CHARACTERISTICS Peak Reptitive Forward or Reverse Blocking Current (VD=Rated VDRM and VRRM; Gate Open) TJ=25 TJ=125 ON CHARACTERISTICS Gate Trigger Current (VD = 12 V; RL =100 Ohms) IGT 2.0 8.0 15 mA Holding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA) IH 4.0 20 40 mA Latch Current (VD=12V,IG = 20mA ) IL 6.0 25 60 mA Gate Trigger Voltage (VD = 12 V; RL = 100 Ohms) VGT 0.5 0.65 1.0 Volts Peak Forward On-State Voltage (ITM= 24 A Peak @Tp 2.0 ms, Duty Cycle 2%) VTM ---- ---- 2.2 Volts DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (VD=Rated VDRM,Exponential Waveform, Gate Open,TJ=125) dv/dt 100 250 ---- V/us Repetitive Critical Rate of Rise of On-state Current IPK=50A,Pw=40 usec,di/dt=1A/usec,Igt=50mA di/dt ---- ---- 50 A/us RATING AND CHARACTERISTIC CURVES S12M15-B SERIES RATING AND CHARACTERISTIC CURVES S12M15-B SERIES Specifications mentioned in this publication are subject to change without notice.