S12M15-B SERIES
MAXIMUM RATINGS
(Tj= 25
℃
unless otherwise noticed)
FEATURES
Blocking Voltage to 600 Volts
On-State Current Rating of 12 Amperes RMS at 80
℃
Rugged, Economical TO220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Minimum and Maximum Values of IGT, VGT an IH Specified
for Ease of Design
High Immunity to dv/dt - 100 V/msec Minimum at 125
℃
Pb-Free Package
MECHANICAL DATA
Case: Molded plastic
Weight: 0.07 ounces, 2.0 grams
Sensitive Gate
Sillicon Controlled Rectifiers
Reverse Blocking Thyristors
SCRs
12 AMPERES RMS
400 thru 600 VOLTS
SEMICONDUCTOR
LITE-ON
Rating Symbol Value Unit
Peak Repetitive Off– State Voltage (
T
J
= -40 to 125
℃
, Sine Wave, 50 to 60 Hz; Gate Open)
S12M15-400B
S12M15-600B
V
DRM
,
V
RRM
400
600 Volts
On-State RMS Current (180° Conduction Angles,Tc=80
)
℃
I
T(RMS)
12 Amp
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,Tj = 25
℃
)
(1/2 Cycle, Sine Wave 50 Hz,Tj = 25
℃
)I
TSM
125
120 Amp
Circuit Fusing Consideration (t = 8.3 ms)
(t = 10 ms) I t 64
72 A s
Forward Peak Gate Power (Pulse Width
1.0us,T
J
=
80
℃
) P
GM
5.0 Watt
Forward Average Gate Power (t=8.3ms,
Tc
=
80
℃
) P
G(AV)
0.5 Watt
Forward Peak Gate Current (Pulse Width 1.0us,Tc=80
℃
) I
GM
2.0 Amp
Operating Junction Temperature Range
T
J
-40 to +125
℃
Storage Temperature Range Tstg -40 to +150
℃
2
Notice: (1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for
zero or negative gate voltage; positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant
current source such that the voltage ratings of the devices are exceeded
REV. 9,Mar-2010, KTXC01
≦
≦
1 Cathode
2 Anode
3 Gate
4 Anode
PIN ASSIGNMENT
2
TO-220AB
All Dimensions in millimeter
TO-220AB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
14.22 15.88
10.67
9.65
2.54 3.43
6.86 5.84
8.26 9.28
- 6.35
12.70 14.73
0.51
2.79
N
M
L
K
J
I 1.14
2.29
0.67 0.40
3.53 4.09
3.56 4.83
1.14 1.40
2.92
2.03
O 1.37 1.17
HH
A
B
C
K
J
I
G
F
E
D
N
M
L
PIN
1 32
O
Characteristic Symbol Value Unit
Thermal Resistance - Junction to Case
- Junction to Ambient
RthJC
RthJA
2.2
62.5
/
℃
W
Maximum Lead Temperature for Soldering Purposes 1/8" from Case for 10 Seconds
T
L
260
℃
Characteristics Symbol Min Typ Max Unit
Peak Reptitive Forward or Reverse Blocking Current T
J
=25
℃
(V
D
=Rated V
DRM
and V
RRM
; Gate Open) T
J
=125
℃
I
DRM
I
RRM
----
----
----
----
10
2.0
uA
mA
Gate Trigger Current (V
D
= 12 V; RL =100 Ohms) I
GT
2.0 8.0 15 mA
Holding Current (V
D
= 12 V, Gate Open, Initiating Current = 200 mA) I
H
4.0 20 40 mA
Latch Current (V
D
=12V,IG = 20mA ) I
L
6.0 25 60 mA
Gate Trigger Voltage (V
D
= 12 V; R
L
= 100 Ohms)
V
GT
0.5 0.65 1.0 Volts
Peak Forward On-State Voltage
(I
TM
= 24 A Peak @Tp 2.0 ms, Duty Cycle 2%)
≦ ≦
V
TM
---- ---- 2.2 Volts
Critical Rate of Rise of Off-State Voltage
(V
D
=Rated V
DRM
,Exponential Waveform, Gate Open,T
J
=125
℃
)dv/dt 100 250 ---- V/us
Repetitive Critical Rate of Rise of On-state Current
IPK=50A,Pw=40 usec,di/dt=1A/usec,Igt=50mA di/dt ---- ---- 50 A/us
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
J
=25 unless otherwise noted)
℃
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
RATING AND CHARACTERISTIC CURVES
S12M15-B SERIES
RATING AND CHARACTERISTIC CURVES
S12M15-B SERIES
RATING AND CHARACTERISTIC CURVES
S12M15-B SERIES
Specifications mentioned in this publication are subject to change without notice.
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