FQD8P10TM_F085 - ON SEMICONDUCTOR

FQD8P10TM-F085 100V P-Channel MOSFET

FQD8P10TM-F085

100V P- Channel MOSFET

General Description

These P-Channel enhancement mode power field effect

transistors are produced using ON Semiconductor’s

proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as audio amplifier,

high efficiency switching DC/DC converters, and DC motor

control.

Features

• -6.6A, -100V, RDS(on) = 0.53Ω @VGS = -10 V

• Low gate charge ( typical 12 nC)

• Low Crss ( typical 30 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximu m Ratings TC = 25°C unless otherwise noted

Thermal Characteristi cs

Symbol Parameter Ratings Units

VDSS Drain-Source Voltage -100 V

IDDrain Current - Continuous (TC = 25°C) -6.6 A

- Continuous (TC = 100°C) -4.2 A

IDM Drain Current - Pulsed (Note 1) -26.4 A

VGSS Gate-Source Voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 150 mJ

IAR Avalanche Current (Note 1) -6.6 A

EAR Repetitive Avalanche Energy (Note 1) 4.4 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns

PDPower Dissipation (TA = 25°C) * 2.5 W

Power Dissipation (TC = 25°C) 44 W

- Derate above 25°C 0.35 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter Typ Max Units

RθJC Thermal Resistance, Junction-to-Case -- 2.84 °C/W

RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W

RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W

* When mounted on the minimum pad size recommended (PCB Mount)

D-PAK

September-2017, Rev. 3

Publication Order Number:

FQD8P10TM-F085/D

• Qualified to AEC Q101

• RoHS Compliant

(Note 4)

(Note 4, 5)

(Note 4)

Electrical Characteristics TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 5.2mH, IAS = -6.6A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ -8.0A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%

5. Essentially independent of operating temperature

Symbol Parame ter Test Co nditions Min Typ Max Units

Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA-100 -- -- V

∆BVDSS

/ ∆TJ

Breakdown Voltage Temperature

Coefficient ID = -250 µA, Referenced to 25°C -- -0.1 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = -100 V, VGS = 0 V -- -- -1 µA

VDS = -80 V, TC = 125°C -- -- -10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA

On Characteri st ics

VGS(th)Gate Threshold Voltage VDS = VGS, ID = -250 µA-2.0 -- -4.0 V

RDS(on)Static Drain-Source

On-Resistance VGS = -10 V, ID = -3.3 A -- 0.41 0.53 Ω

gFS Forward Transconductance VDS = -40 V, ID = -3.3 A -- 4.1 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = -25 V, VGS = 0 V,

f = 1.0 MHz

-- 360 470 pF

Coss Output Capacitance -- 120 155 pF

Crss Reverse Transfer Capacitance -- 30 40 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = -50 V, ID = -8.0 A,

RG = 25 Ω

-- 11 30 ns

trTurn-On Rise Time -- 110 230 ns

td(off) Turn-Off Delay Time -- 20 50 ns

tfTurn-Off Fall Time -- 35 80 ns

QgTotal Gate Charge VDS = -80 V, ID = -8.0 A,

VGS = -10 V

-- 12 15 nC

Qgs Gate-Source Charge -- 3.0 -- nC

Qgd Gate-Drain Charge -- 6.4 -- nC

Drain-Source Diode Character istics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- -6.6 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -26.4 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -6.6 A -- -- -4.0 V

trr Reverse Recovery Time VGS = 0 V, IS = -8.0 A,

dIF / dt = 100 A/µs

-- 98 -- ns

Qrr Reverse Recovery Charge -- 0.35 -- µC

FQD8P10TM-F085 100V P-Channel MOSFET

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0.0 0.5 1.0 1.5 2.0 2.5 3.0

10-1

100

101

150℃

※ Notes :

1. VGS = 0V

2. 250μs Pulse Test

25℃

-IDR , Reverse Drain Current [A]

-VSD , Source-Drain Voltage [V]

0 5 10 15 20 25

0.0

0.3

0.6

0.9

1.2

1.5

※ Note : TJ = 25℃

VGS = - 20V

VGS = - 10V

RDS(on) [ Ω],

Drain-Source On-Resistance

-ID , Drain Current [A]

246810

10-1

100

101

150℃

25℃

-55℃

※ Notes :

1. VDS = -40V

2. 250μs Pulse Test

-ID , Drain Current [A]

-VGS , Gate-Source Voltage [V]

10-1 100101

10-2

10-1

100

101

VGS

Top : -15.0 V

-10.0 V

-8.0 V

-7.0 V

-6.5 V

-5.5 V

-5.0 V

Bottom : -4.5 V

※ Notes :

1. 250μs Pulse Test

2. TC = 25℃

-ID, Drain Current [A]

-VDS, Drain-Source Voltage [V]

0 2 4 6 8 10 12 14

VDS = -50V

VDS = -20V

VDS = -80V

※ Note : ID = -8.0 A

-VGS , Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

10-1 100101

100

200

300

400

500

600

700

800

900

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

※ Notes :

1. VGS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacitance [pF]

-VDS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. C apacitance C haracteristi cs Figure 6. Ga te Ch arge Chara ct eri stics

Figu re 3. On-Resist ance Variation vs.

Drain Current and Gate Voltage Figure 4. Body Diode Fo rward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Character ist ic s

FQD8P10TM-F085 100V P-Channel MOSFET

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10-5 10-4 10-3 10-2 10-1 100101

10-1

100

※ N otes :

1 . Z θJC(t) = 2.84 ℃/W M a x.

2 . D uty F a c to r, D =t1/t2

3 . T JM - T C = PDM * ZθJC(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZθJC

(t), Thermal Response

t1, Square W ave Pulse Duration [sec]

25 50 75 100 125 150

-ID, Drain Current [A]

TC, Case Temperature [℃

]

100101102

10-1

100

101

102

10 ms

1 ms

100 µs

Operation in This Area

is Limited by R DS(on)

※ Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

-ID, Drain Current [A]

-VDS, Drain-Source Voltage [V]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes :

1. VGS = -10 V

2. ID = -3.3 A

RDS(ON) , (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

※ Notes :

1. VGS = 0 V

2. ID

= -250 μA

-BV DSS , (Normalized)

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figu re 7. Br ea kdown Volta ge Variation

vs. Temperature Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Transi ent Therm al Res ponse Curve

PDM

FQD8P10TM-F085 100V P-Channel MOSFET

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Charge

VGS

-10V

Qgs Qgd

-3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

12V

Same Type

as DUT

Charge

VGS

-10V

Qgs Qgd

-3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

12V

Same Type

as DUT

VDS

VGS 10%

90%

td(on) tr

ton toff

td(off) tf

VDD

-10V

VDS

DUT

VGS

VDS

VGS 10%

90%

td(on) tr

ton toff

td(off) tf

VDD

-10V

VDS

DUT

VGS

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

-10V DUT

t p

EAS =LI

AS2

----

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

-10V DUT

t p

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FQD8P10TM-F085 100V P-Channel MOSFET

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Peak Diode Recovery dv /dt Test Circuit & Waveforms

DUT

VDS

Driver

RGCompliment of DUT

(N-Channel)

VGS • dv/dt controlled by RG

•I

SD controlled by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pulse Period

--------------------------

DUT

VDS

Driver

RGCompliment of DUT

(N-Channel)

VGS • dv/dt controlled by RG

•I

SD controlled by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pulse Period

--------------------------

D = Gate Pulse Width

Gate Pulse Period

--------------------------

FQD8P10TM-F085 100V P-Channel MOSFET

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