DATA SH EET
Product data sheet
Supersedes data of 1999 Apr 08 2003 Nov 25
DISCRETE SEMICONDUCTORS
BCP68
NPN medium power transistor;
20 V, 1 A
nd
book, halfpage
M3D087
2003 Nov 25 2
NXP Semiconductors Product data sheet
NPN medium power transistor;
20 V, 1 A BCP68
FEATURES
•High current
•Two current gain selections
•1.4 W total power dissipation.
APPLICATIONS
•Linear voltage regulators
•Low side switches
•Supply line switch for ne gative voltages
•MOSFET drivers
•Audio pre-amplifiers.
DESCRIPTION
NPN medium power transistor (see “Simplified outline,
symbol and pinning”) for package details.
QUICK REFERENCE DATA
SYMBOL PARAMETER MIN. MAX. UNIT
VCEO collector-emitter
voltage −20 V
ICcollector current (DC) −1 A
ICM peak collector current −2 A
hFE DC current gain
BCP68 85 375
BCP68-25 160 375
PRODUCT OVERVIEW
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
RELATED PRODUCTS
TYPE NUMBER PACKAGE MARKING CODE
PHILIPS EIAJ
BCP68 SOT223 SC-73 BCP68
BCP68-25 SOT223 SC-73 BCP68/25
TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PINNING
PIN DESCRIPTION
BCP68 1base
2collector
3emitter
4collector
TYPE NUMBER DESCRIPTION FEATURE
BCP69 PNP medium power tran sistor PNP complement
BC868 NPN medium power transistor SOT89, 20 V
BC368 NPN medium power transistor SOT54, 20 V
handbook, halfpage
4
123
MAM287
Top view
3
2, 4
1
2003 Nov 25 3
NXP Semiconductors Pr oduct data shee t
NPN medium power transistor;
20 V, 1 A BCP68
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. See SOT223 (SC-73) stand ard mounting conditions.
2. Device mounted on a FR4 printed-circuit b oard; single-sided copper; tin plate d; st andard footprint for SOT223.
3. Device mounted on a FR 4 printed-circuit boar d; single-sided copper; tinplate d; 1 cm2 collector mounting pad.
4. Device mounted on a FR 4 printed-circuit boar d; single-sided copper; tinplate d; 6 cm2 collector mounting pad.
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
BCP68 −plastic surface mounted package; collector pad for good heat
transfer; 4 leads SOT223
BCP68-25
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter −32 V
VCEO collector-emitter voltage open base −20 V
VEBO emitter-base vo ltage open collector −5 V
ICcollector current (DC) −1 A
ICM peak collector current −2 A
IBM peak base current −200 mA
Ptot total power dissipation Tamb ≤ 25 °C; notes 1 and 2 −0.625 W
Tamb ≤ 25 °C; notes 1 and 3 −1 W
Tamb ≤ 25 °C; notes 1 and 4 −1.4 W
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
2003 Nov 25 4
NXP Semiconductors Pr oduct data shee t
NPN medium power transistor;
20 V, 1 A BCP68
handbook, halfpage
Ptot
(W)
−60 600 120 180
Tamb (°C)
0
1.6
1.2
0.4
0.8
MDB846
(1)
(2)
(3)
Fig.1 Power derating curve.
(1) 6 cm2 collector mounting pad.
(2) 1 cm2 collector mounting pad.
(3) Standar d PCB footpr int.
THERMAL CHARACTE RISTICS
Notes
1. See SOT223 (SC-73) stand ard mounting conditions.
2. Device mounted on a FR4 printed-circuit b oard; single-sided copper; tin plate d; st andard footprint for SOT223.
3. Device mounted on a FR 4 printed-circuit boar d; single-sided copper; tinplate d; 1 cm2 collector mounting pad.
4. Device mounted on a FR 4 printed-circuit boar d; single-sided copper; tinplate d; 6 cm2 collector mounting pad.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient Tamb ≤ 25 °C; notes 1 and 3 200 K/W
Tamb ≤ 25 °C; notes 1 and 4 125 K/W
Tamb ≤ 25 °C; notes 1 and 4 89 K/W
Rth(j-s) thermal resistance from junction to solder point Tamb ≤ 25 °C15 K/W
2003 Nov 25 5
NXP Semiconductors Pr oduct data shee t
NPN medium power transistor;
20 V, 1 A BCP68
handbook, full pagewidth
MSA443
1.20
(4x)
3.90
5.90
4.80
7.40
4
231
3.85
1.20 (3x)
1.30 (3x)
;;
;;
;;
;;
;;
;;
;;;;
;;;;
0.30
3.60
3.50
7.00
6.15
7.65
solder lands
solder resist
occupied area
solder paste
Fig.2 Standard PCB footprint for mounting SOT223 (reflow soldering).
Dimensions in mm.
2003 Nov 25 6
NXP Semiconductors Pr oduct data shee t
NPN medium power transistor;
20 V, 1 A BCP68
handbook, halfpage
MDB845
30 mm
20 mm
40 mm
32 mm
2.6 mm
1.3 mm
5 mm
1.6 mm
0.5 mm
3.96 mm
Fig.3 6 cm2 collector mounting pad.
Dimensions in mm.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-off current VCB = 25 V; IE = 0 −−100 nA
VCB = 25 V; IE = 0; Tj = 150 °C−−10 μA
IEBO emitter-base cu t-off current VEB = 5 V; IC = 0 −−100 nA
hFE DC current gain BCP68
VCE = 10 V; IC = 5 mA 50 − −
VCE = 1 V; IC = 500 mA 85 −375
VCE = 1 V; IC = 1 A 60 − −
BCP68-25
VCE = 1 V; IC = 500 mA 160 −375
VCEsat collector-emitte r sa turation v oltage IC = 1 A; IB = 100 mA −−500 mV
VBE base-emitter vo ltage VCE = 10 V; IC = 5 mA −−700 mV
VCE = 1 V; IC = 1 A −−1 V
Cccollector capacitance VCB = 10 V; IE = ie = 0; f = 1 MHz −22 −pF
fTtransition frequen c y VCE = 5 V; IC = 50 mA; f = 100 MHz 40 170 −MHz
2003 Nov 25 7
NXP Semiconductors Pr oduct data shee t
NPN medium power transistor;
20 V, 1 A BCP68
handbook, halfpage
IC
(A)
01 2 45
VCE (V)
3
MDB848
2.4
1.6
2.0
1.2
0.8
0.4
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
Fig.4 Collector current as a function of
collector-emitter voltage; typical values.
(1) IB = 10 mA.
(2) IB = 9 mA.
(3) IB = 8 mA.
(4) IB = 7 mA.
(5) IB = 6 mA.
(6) IB = 5 mA.
(7) IB = 4 mA.
(8) IB = 3 mA.
(9) IB = 2 mA.
(10) IB = 1 mA.
Tamb = 25 °C.
handbook, halfpage
200
400
800
600
1000
VBE
(mV)
MDB849
0
IC (mA)
10−111010
2103104
Fig.5 Base-emitte r voltage as a function of
collector current; typical values.
VBE/VCE = 1 V.
2003 Nov 25 8
NXP Semiconductors Pr oduct data shee t
NPN medium power transistor;
20 V, 1 A BCP68
handbook, halfpage
hFE
MDB850
102
103
IC (mA)
10−111010
2103104
Fig.6 DC current ga in as a function of collector
current; ty pical values.
hFE/VCE = 1 V.
handbook, halfpage
MDB851
IC (mA)
10−111010
2103104
VCEsat
(mV)
103
102
10
1
Fig.7 Collector-emitter satur ation voltage as a
function of collector current; typical values.
IC/IB = 10.
2003 Nov 25 9
NXP Semiconductors Pr oduct data shee t
NPN medium power transistor;
20 V, 1 A BCP68
mdb847
10−51010−2
10−4102
10−1tp (s)
10−3103
1
10
1
102
Rth(j-a)
(K/W)
10−1
(10)
(9)
(8)
(7)
(1)
(4)
(5)
(3)
(6)
t
p
t
p
T
P
t
T
δ
=
(2)
Fig.8 Transient thermal resistance from junction to ambient as a function of pulse time for 6 cm2 collector
mounting pad.
(1) δ = 1.0.
(2) δ = 0.75. (3) δ = 0.5.
(4) δ = 0.33. (5) δ = 0.2.
(6) δ = 0.1. (7) δ = 0.05.
(8) δ = 0.02. (9) δ = 0.01.
(10) δ = 0.0.
2003 Nov 25 10
NXP Semiconductors Pr oduct data shee t
NPN medium power transistor;
20 V, 1 A BCP68
PACKAGE OUTLINE
UNIT A1bpcDEe1HELpQywv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.10
0.01
1.8
1.5 0.80
0.60
b1
3.1
2.9 0.32
0.22 6.7
6.3 3.7
3.3 2.3
e
4.6 7.3
6.7 1.1
0.7 0.95
0.85 0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 SC-73 97-02-28
99-09-13
wM
bp
D
b1
e1
e
A
A1
Lp
Q
detail X
HE
E
vMA
AB
B
c
y
0 2 4 mm
scale
A
X
132
4
P
lastic surface mounted package; collector pad for good heat transfer; 4 leads SOT22
3
2003 Nov 25 11
NXP Semiconductors Pr oduct data shee t
NPN medium power transistor;
20 V, 1 A BCP68
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or co mpleting a design.
2. The product s tatus of device(s ) described in this do cument may have ch anged since this docu ment was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the produc t specification.
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accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
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reserves the right to make changes to information
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Customer notification
This data sheet was changed to reflect the new company name NXP Semicon ductors. No changes were
made to the content, except for the legal definitions and disclaimer s.
Printed in The Netherlands R75/04/pp12 Date of release: 2003 Nov 25 Document orde r number: 9397 750 12041
