Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 44
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 31 A
IDM Pulsed Drain Current 170
PD @TC = 25°C Power Dissipation 380 W
Linear Derating Factor 2.6 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy520 mJ
IAR Avalanche Current25 A
EAR Repetitive Avalanche Energy38 mJ
dv/dt Peak Diode Recovery dv/dt 8.7 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
IRFP264NPbF
HEXFET® Power MOSFET
11/3/03
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.39
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient ––– 40
Thermal Resistance
www.irf.com 1
VDSS = 250V
RDS(on) = 60mΩ
ID = 44A
S
D
G
PD - 94811
Absolute Maximum Ratings
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
Description
TO-247AC
Lead-Free
IRFP264NPbF
2www.irf.com
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V
trr Reverse Recovery Time ––– 270 400 ns TJ = 25°C, IF = 25A
Qrr Reverse Recovery Charge ––– 2.7 4.1 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
44
170
A
Starting TJ = 25°C, L = 1.7mH
RG = 25Ω, IAS = 25A,VGS=10V
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Notes:
ISD ≤ 25A, di/dt ≤ 500A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 250 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.30 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 60 mΩVGS = 10V, ID = 25A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 29 ––– ––– S VDS = 25V, ID = 25A
––– ––– 25 µA VDS = 250V, VGS = 0V
––– ––– 250 VDS = 200V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
QgTotal Gate Charge ––– ––– 210 ID = 25A
Qgs Gate-to-Source Charge ––– ––– 34 nC VDS = 200V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 94 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 17 ––– VDD = 30V
trRise Time ––– 62 ––– ID = 25A
td(off) Turn-Off Delay Time ––– 52 ––– RG = 1.8Ω
tfFall Time ––– 53 ––– VGS = 10V, See Fig. 10
Between lead,
––– ––– 6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 3860 ––– VGS = 0V
Coss Output Capacitance ––– 480 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 110 ––– pF ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LDInternal Drain Inductance
LSInternal Source Inductance ––– –––
S
D
G
IGSS
ns
5.0
13
IDSS Drain-to-Source Leakage Current
IRFP264NPbF
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
1 10 100
20µs PULSE WIDTH
T = 175 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V = 50V
20µs PULSE W IDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 175 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
1.0
2.0
3.0
4.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
42A
IRFP264NPbF
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
040 80 120 160 200
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
25A
V = 50V
DS
V = 125V
DS
V = 200V
DS
0.1
1
10
100
1000
0.2 0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 175 C
J°
110 100 1000
VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS
= 0V, f = 1 MHZ
Ciss
= C
gs + C
gd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds
+ C
gd
1 10 100 1000 10000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
IRFP264NPbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
VGS
+
-
VDD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150 175
0
10
20
30
40
50
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
IRFP264NPbF
6www.irf.com
QG
QGS QGD
VG
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VGS
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
25 50 75 100 125 150 175
0
200
400
600
800
1000
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
10A
18A
25A
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
IRFP264NPbF
www.irf.com 7
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
RG
VDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T*Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
VGS
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For N-channel HEXFET® power MOSFETs
IRFP264NPbF
8www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/03
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
LEAD ASSIGNMENTS
NOTES:
- D - 5.30 (.209)
4.70 (.185)
2.50 (.089)
1.50 (.059)
4
3X 0.80 (.031)
0.40 (.016)
2.60 (.102)
2.20 (.087)
3.40 (.133)
3.00 (.118)
3X
0.25 (.010) MCAS
4.30 (.170)
3.70 (.145)
- C -
2X 5.50 (.217)
4.50 (.177)
5.50 (.217)
0.25 (.010)
1.40 (.056)
1.00 (.039)
3.65 (.143)
3.55 (.140)
D
MM
B
- A -
15.90 (.626)
15.30 (.602)
- B -
123
20.30 (.800)
19.70 (.775)
14.80 (.583)
14.20 (.559)
2.40 (.094)
2.00 (.079)
2X
2X
5.45 (.215)
1 DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE
TO-247-AC.
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
LEAD ASSIGNMENTS
Hexfet
1 - Gate
2 - Drain
3 - Source
4 - Drain
IGBT
1 - Gate
2 - Collector
3 - Emitter
4 - Collector
TO-247AC Part Marking Information
EXAMPLE:
ASSEMBLED ON WW 35, 2000
LOT CODE 5657
WITH ASSEMBLY
THIS IS AN IRFPE30
IN THE ASSEMBLY LINE "H" 035H
LOGO
INTERNATIONAL
RECTIFIER IRFPE30
LOT CODE
ASSEMBLY
56 57
PART NUMBER
DATE CODE
YEAR 0 = 2000
WEEK 35
LINE H
Note: "P" in assembly line
position indicates "Lead-Free"
