NGB8245N Ignition IGBT 20 A, 450 V, N-Channel D2PAK Littelfuse.com This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 A, 450 V VCE(on) 3 1.24 V @ IC = 15 A, VGE . 4.0 V Features * * * * * * * * Ideal for Coil-on-Plug and Driver-on-Coil Applications D2PAK Package Offers Smaller Footprint for Increased Board Space Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability This is a Pb-Free Device C RG G RGE E Applications MARKING DIAGRAM * Ignition Systems 4 Collector MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Symbol Value Unit Collector-Emitter Voltage VCES 500 V Collector-Gate Voltage VCER 500 V Gate-Emitter Voltage VGE "15 V Collector Current-Continuous @ TC = 25C - Pulsed IC 20 50 ADC AAC Continuous Gate Current IG 1.0 mA Transient Gate Current (t 2 ms, f 100 Hz) IG 20 mA 2.0 kV 8.0 kV Rating ESD (Charged-Device Model) ESD ESD (Human Body Model) R = 1500 W, C = 100 pF ESD ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V PD 150 1.0 W W/C TJ, Tstg -55 to +175 C Total Power Dissipation @ TC = 25C Derate above 25C Operating & Storage Temperature Range NGB 8245NG AYWW 1 D2PAK CASE 418B STYLE 4 1 Gate 3 Emitter 2 Collector NGB8245N = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package ORDERING INFORMATION Device Package Shipping NGB8245NT4G D2PAK (Pb-Free) 800 / Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Specifications subject to change without notice. (c) 2016 Littelfuse, Inc. September 19, 2016 - Rev. 2 1 Publication Order Number: NGB8245N/D NGB8245N UNCLAMPED COLLECTOR-TO-EMITTER AVALANCHE CHARACTERISTICS Characteristic Symbol Single Pulse Collector-to-Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 9.5 A, RG = 1 kW, L = 3.5 mH, Starting TC = 150C EAS Value 158 Unit mJ THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case RqJC 1.0 C/W Thermal Resistance, Junction-to-Ambient (Note 1) RqJA 62.5 C/W TL 275 C Maximum Temperature for Soldering Purposes, 1/8 from case for 5 seconds (Note 2) 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D. ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit BVCES IC = 2.0 mA TJ = -40C to 175C 430 450 470 V IC = 10 mA TJ = -40C to 175C 450 475 500 IC = 12 A, L = 3.5 mH, RG = 1 kW (Note 4) TJ = -40C to 175C 420 450 480 VCE = 15 V, VGE = 0 V TJ = 25C 0.002 1.0 VCE = 250 V, RG = 1 kW TJ = -40C to 175C 0.5 2.0 100 TJ = 25C 30 33 39 IC = -75 mA TJ = 175C 31 35 40 TJ = -40C 30 31 37 TJ = 25C - 0.4 1.0 TJ = 175C - 20 35 TJ = -40C - 0.04 0.2 OFF CHARACTERISTICS (Note 3) Collector-Emitter Clamp Voltage Collector-Emitter Leakage Current Reverse Collector-Emitter Clamp Voltage Reverse Collector-Emitter Leakage Current Gate-Emitter Clamp Voltage ICES BVCES(R) ICES(R) VCE = -24 V mA V mA BVGES IG = "5.0 mA TJ = -40C to 175C 12 12.5 14 V IGES VGE = "5.0 V TJ = -40C to 175C 200 316 350 mA Gate-Emitter Leakage Current Gate Resistor RG TJ = -40C to 175C 70 Gate-Emitter Resistor RGE TJ = -40C to 175C 14.25 16 25 kW VGE(th) TJ = 25C 1.5 1.8 2.1 V TJ = 175C 0.7 1.0 1.3 TJ = -40C 1.7 2.0 2.3 4.0 4.6 5.2 mV/C V W ON CHARACTERISTICS (Note 3) Gate Threshold Voltage IC = 1.0 mA, VGE = VCE Threshold Temperature Coefficient (Negative) Collector-to-Emitter On-Voltage VCE(on) Forward Transconductance gfs IC = 10 A, VGE = 3.7 V TJ = -40C to 175C 0.8 1.11 1.97 IC = 10 A, VGE = 4.0 V TJ = -40C to 175C 0.8 1.10 1.85 IC = 15 A, VGE = 4.0 V TJ = -40C to 175C 0.8 1.24 2.00 IC = 6.0 A, VCE = 5.0 V TJ = 25C 10 19 25 Mhos 1100 1400 1600 pF 50 65 80 15 20 25 DYNAMIC CHARACTERISTICS (Note 3) Input Capacitance CISS Output Capacitance COSS Transfer Capacitance CRSS f = 10 kHz, VCE = 25 V Specifications subject to change without notice. (c) 2016 Littelfuse, Inc. September 19, 2016 - Rev. 2 2 TJ = 25C Publication Order Number: NGB8245N/D NGB8245N ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit TJ = -40C to 175C 0.1 1.0 2.0 ms TJ = -40C to 175C 1.0 3.4 6.0 TJ = -40C to 175C 2.0 4.5 8.0 TJ = -40C to 175C 3.0 8.0 12 TJ = -40C to 175C 6.5 9.7 12.5 TJ = -40C to 175C 6.0 8.3 11 SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time (Resistive) 10% VGE to 10% IC Rise Time (Resistive) 10% IC to 90% IC Turn-Off Delay Time (Resistive) 90% VGE to 90% IC Fall Time (Resistive) 90% IC to 10% IC Turn-Off Delay Time (Inductive) 90% VGE to 90% IC Fall Time (Inductive) 90% IC to 10% IC td(on)R trR VCC = 14 V, RL = 1.0 W, RG = 1.0 kW, VGE = 5.0 V td(off)R tfR td(off)L tfL VCC = 14 V, RL = 1.0 W, RG = 1.0 kW, VGE = 5.0 V VCE = BVCES, L = 0.5mH, RG = 1.0 kW, IC = 10 A, VGE = 5.0 V ms ms 3. Electrical Characteristics at temperature other than 25C, Dynamic and Switching characteristics are not subject to production testing. 4. Not subject to production testing. Specifications subject to change without notice. (c) 2016 Littelfuse, Inc. September 19, 2016 - Rev. 2 3 Publication Order Number: NGB8245N/D NGB8245N TYPICAL ELECTRICAL CHARACTERISTICS 400 30 350 IA, AVALANCHE CURRENT (A) TJ = 25C SCIS ENERGY (mJ) 300 250 TJ = 175C 200 150 100 VCC = 14 V VGE = 5.0 V RG = 1000 W 50 0 0 2 6 4 8 VCC = 14 V VGE = 5.0 V RG = 1000 W 25 L = 1.8 mH 20 L = 3.0 mH 15 10 L = 10 mH 5 0 -50 10 -25 INDUCTOR (mH) 60 2.0 IC = 25 A IC = 20 A 1.5 IC = 15 A 1.25 IC = 10 A 1.0 IC = 7.5 A 0.75 0.5 0.25 VGE = 4.5 V 0.0 -50 -25 0 25 50 75 100 150 125 50 4V TJ = 25C 3.5 V 20 3V 10 2.5 V 2 3 4 5 6 7 8 3.5 V 3V 2.5 V 10 0 2 1 3 4 5 6 7 8 VGE = 10 V 4.5 V 4V 50 5V 40 TJ = -40C 3.5 V 30 20 3V 10 2.5 V 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector Current vs. Collector-to-Emitter Voltage September 19, 2016 - Rev. 2 4V 20 0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Specifications subject to change without notice. (c) 2016 Littelfuse, Inc. 4.5 V 30 60 4.5 V 30 1 150 175 Figure 4. Collector Current vs. Collector-to-Emitter Voltage 5V 0 125 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 40 0 100 TJ = 175C 40 0 175 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 50 75 5V Figure 3. Collector-to-Emitter Voltage vs. Junction Temperature VGE = 10 V 50 VGE = 10 V TJ, JUNCTION TEMPERATURE (C) 60 25 Figure 2. Open Secondary Avalanche Current vs. Temperature IC, COLLECTOR CURRENT (A) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 1. Self Clamped Inductive Switching 1.75 0 TJ, JUNCTION TEMPERATURE (C) Figure 6. Collector Current vs. Collector-to-Emitter Voltage 4 Publication Order Number: NGB8245N/D NGB8245N TYPICAL ELECTRICAL CHARACTERISTICS 10000 COLLECTOR TO EMITTER LEAKAGE CURRENT (mA) IC, COLLECTOR CURRENT (A) 45 VCE = 5 V 40 1000 35 30 25 20 TJ = 25C 15 10 TJ = 175C 5 0 0 0.5 1 1.5 TJ = -40C 2 2.5 3 3.5 10 VCE = 200 V 1.0 0.1 -50 -25 0 25 50 75 100 125 150 175 VGE, GATE TO EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (C) Figure 7. Transfer Characteristics Figure 8. Collector-to-Emitter Leakage Current vs. Temperature 10000 2.25 Mean Mean + 4 s 2.00 1.75 Mean - 4 s 1.50 Ciss 1000 C, CAPACITANCE (pF) GATE THRESHOLD VOLTAGE (V) 100 4 2.50 1.25 1.00 0.75 0.50 Coss 100 Crss 10 1.0 0.25 0 -50 -25 0 25 50 75 100 125 150 0.1 175 5 10 15 20 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 9. Gate Threshold Voltage vs. Temperature Figure 10. Capacitance vs. Collector-to-Emitter Voltage 25 12 10 10 SWITCHING TIME (ms) tfall 8 tdelay 6 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 9.0 A RL = 33 W 4 2 0 25 0 TJ, JUNCTION TEMPERATURE (C) 12 SWITCHING TIME (ms) VCE = -24 V 50 75 100 125 150 8 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 9.0 A L = 300 mH tdelay 6 tfall 4 2 0 25 175 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 11. Resistive Switching Fall Time vs. Temperature Figure 12. Inductive Switching Fall Time vs. Temperature Specifications subject to change without notice. (c) 2016 Littelfuse, Inc. September 19, 2016 - Rev. 2 5 175 Publication Order Number: NGB8245N/D R(t), TRANSIENT THERMAL RESISTANCE (C/Watt) NGB8245N 100 Duty Cycle = 0.5 0.2 10 0.1 1 0.02 0.05 0.01 0.1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 P(pk) t1 t2 Single Pulse 0.01 0.000001 DUTY CYCLE, D = t1/t2 0.00001 0.0001 0.001 0.01 0.1 TJ(pk) - TA = P(pk) RqJA(t) For D=1: RqJC X R(t) for t 0.1 s 1 10 100 1000 t,TIME (S) RqJC(t), TRANSIENT THERMAL RESISTANCE (C/Watt) Figure 13. Minimum Pad Transient Thermal Resistance (Non-normalized Junction-to-Ambient) 1 Duty Cycle = 0.5 0.2 0.1 0.1 t1 0.02 0.01 0.01 0.000001 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 P(pk) 0.05 t2 DUTY CYCLE, D = t1/t2 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 t,TIME (S) Figure 14. Best Case Transient Thermal Resistance (Non-normalized Junction-to-Case Mounted on Cold Plate) Specifications subject to change without notice. (c) 2016 Littelfuse, Inc. September 19, 2016 - Rev. 2 TJ(pk) - TA = P(pk) RqJC(t) 6 Publication Order Number: NGB8245N/D NGB8245N PACKAGE DIMENSIONS D2PAK 3 CASE 418B-04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. C E -B- V W 4 1 2 A S 3 -T- SEATING PLANE K J G D W H 3 PL 0.13 (0.005) DIM A B C D E F G H J K L M N P R S V M T B M P U SOLDERING FOOTPRINT* L M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 8.38 0.33 F VIEW W-W 1.016 0.04 10.66 0.42 17.02 0.67 5.08 0.20 3.05 0.12 SCALE 3:1 mm inches Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. Littelfuse.com Specifications subject to change without notice. (c) 2016 Littelfuse, Inc. September 19, 2016 - Rev. 2 7 Publication Order Number: NGB8245N/D