1Publication Order Number:
NGB8245N/D
NGB8245N
Ignition IGBT
20 A, 450 V, N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
•Ideal for Coil−on−Plug and Driver−on−Coil Applications
•D2PAK Package Offers Smaller Footprint for Increased Board Space
•Gate−Emitter ESD Protection
•Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
•Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
•Low Saturation Voltage
•High Pulsed Current Capability
•This is a Pb−Free Device
Applications
•Ignition Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector−Emitter Voltage VCES 500 V
Collector−Gate Voltage VCER 500 V
Gate−Emitter Voltage VGE "15 V
Collector Current−Continuous
@ TC = 25°C − Pulsed
IC20
50
ADC
AAC
Continuous Gate Current IG1.0 mA
Transient Gate Current
(t ≤ 2 ms, f ≤ 100 Hz)
IG20 mA
ESD (Charged−Device Model) ESD 2.0 kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
8.0 kV
ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD150
1.0
W
W/°C
Operating & Storage Temperature Range TJ, Tstg −55 to +175 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
20 A, 450 V
VCE(on) 3 1.24 V @
IC = 15 A, VGE . 4.0 V
C
E
GRG
Device Package Shipping†
ORDERING INFORMATION
Littelfuse.com
RGE
NGB8245NT4G D2PAK
(Pb−Free)
800 / Tape & Reel
D2PAK
CASE 418B
STYLE 4
MARKING DIAGRAM
NGB
8245NG
AYWW
1
Gate
3
Emitter
4 Collector
2
Collector
NGB8245N= Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
1
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
September 19, 2016 − Rev. 2
NGB8245N
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS
Characteristic Symbol Value Unit
Single Pulse Collector−to−Emitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 9.5 A, RG = 1 kW, L = 3.5 mH, Starting TC = 150°C
EAS 158
mJ
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case RqJC 1.0 °C/W
Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 62.5 °C/W
Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2) TL275 °C
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Temperature Min Typ Max Unit
OFF CHARACTERISTICS (Note 3)
Collector−Emitter Clamp Voltage BVCES IC = 2.0 mA TJ = −40°C to 175°C 430 450 470 V
IC = 10 mA TJ = −40°C to 175°C 450 475 500
IC = 12 A, L = 3.5 mH,
RG = 1 kW (Note 4)
TJ = −40°C to 175°C 420 450 480
Collector−Emitter Leakage Current ICES VCE = 15 V, VGE = 0 V TJ = 25°C 0.002 1.0 mA
VCE = 250 V, RG = 1 kWTJ = −40°C to 175°C 0.5 2.0 100
Reverse Collector−Emitter Clamp
Voltage
BVCES(R)
IC = −75 mA
TJ = 25°C 30 33 39 V
TJ = 175°C 31 35 40
TJ = −40°C 30 31 37
Reverse Collector−Emitter Leakage
Current
ICES(R)
VCE = −24 V
TJ = 25°C − 0.4 1.0 mA
TJ = 175°C − 20 35
TJ = −40°C − 0.04 0.2
Gate−Emitter Clamp Voltage BVGES IG = "5.0 mA TJ = −40°C to 175°C 12 12.5 14 V
Gate−Emitter Leakage Current IGES VGE = "5.0 V TJ = −40°C to 175°C 200 316 350 mA
Gate Resistor RGTJ = −40°C to 175°C 70 W
Gate−Emitter Resistor RGE TJ = −40°C to 175°C 14.25 16 25 kW
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGE(th)
IC = 1.0 mA, VGE = VCE
TJ = 25°C 1.5 1.8 2.1 V
TJ = 175°C 0.7 1.0 1.3
TJ = −40°C 1.7 2.0 2.3
Threshold Temperature Coefficient
(Negative)
4.0 4.6 5.2 mV/°C
Collector−to−Emitter On−Voltage VCE(on) IC = 10 A, VGE = 3.7 V TJ = −40°C to 175°C 0.8 1.11 1.97 V
IC = 10 A, VGE = 4.0 V TJ = −40°C to 175°C 0.8 1.10 1.85
IC = 15 A, VGE = 4.0 V TJ = −40°C to 175°C 0.8 1.24 2.00
Forward Transconductance gfs IC = 6.0 A, VCE = 5.0 V TJ = 25°C 10 19 25 Mhos
DYNAMIC CHARACTERISTICS (Note 3)
Input Capacitance CISS
f = 10 kHz, VCE = 25 V TJ = 25°C
1100 1400 1600 pF
Output Capacitance COSS 50 65 80
Transfer Capacitance CRSS 15 20 25
2Publication Order Number:
NGB8245N/D
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
September 19, 2016 − Rev. 2
NGB8245N
ELECTRICAL CHARACTERISTICS
Characteristic UnitMaxTypMinTemperatureTest ConditionsSymbol
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time (Resistive)
10% VGE to 10% IC
td(on)R
VCC = 14 V, RL = 1.0 W,
RG = 1.0 kW, VGE = 5.0 V
TJ = −40°C to 175°C 0.1 1.0 2.0 ms
Rise Time (Resistive)
10% IC to 90% IC
trR TJ = −40°C to 175°C 1.0 3.4 6.0
Turn−Off Delay Time (Resistive)
90% VGE to 90% IC
td(off)R
VCC = 14 V, RL = 1.0 W,
RG = 1.0 kW, VGE = 5.0 V
TJ = −40°C to 175°C 2.0 4.5 8.0 ms
Fall Time (Resistive)
90% IC to 10% IC
tfR TJ = −40°C to 175°C 3.0 8.0 12
Turn−Off Delay Time (Inductive)
90% VGE to 90% IC
td(off)L VCE = BVCES, L = 0.5mH,
RG = 1.0 kW, IC = 10 A,
VGE = 5.0 V
TJ = −40°C to 175°C 6.5 9.7 12.5 ms
Fall Time (Inductive)
90% IC to 10% IC
tfL TJ = −40°C to 175°C 6.0 8.3 11
3. Electrical Characteristics at temperature other than 25°C, Dynamic and Switching characteristics are not subject to production testing.
4. Not subject to production testing.
3Publication Order Number:
NGB8245N/D
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
September 19, 2016 − Rev. 2
NGB8245N
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. Self Clamped Inductive Switching Figure 2. Open Secondary Avalanche Current
vs. Temperature
Figure 3. Collector−to−Emitter Voltage vs.
Junction Temperature
Figure 4. Collector Current vs.
Collector−to−Emitter Voltage
Figure 5. Collector Current vs.
Collector−to−Emitter Voltage
Figure 6. Collector Current vs.
Collector−to−Emitter Voltage
INDUCTOR (mH)
250
068
4
100
50
200
0
400
150
10
TJ = 25°C
SCIS ENERGY (mJ)
TJ, JUNCTION TEMPERATURE (°C)
−50 50 75250 100−25 125
10
20
5
15
0
25
30
175
VCC = 14 V
VGE = 5.0 V
RG = 1000 W
L = 10 mH
150
L = 3.0 mH
L = 1.8 mH
IA, AVALANCHE CURRENT (A)
1.25
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
−50 50 75250 100−25 125
0.5
1.5
0.25
1.0
0.0
1.75
2.0
0.75
150
VGE = 4.5 V
IC = 25 A
IC = 20 A
IC = 15 A
IC = 10 A
IC = 7.5 A
0
40
6
10
42
IC, COLLECTOR CURRENT (A)
0
60
20
30
50
81357
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
TJ = 175°C
VGE = 10 V
5 V
4.5 V
4 V
3.5 V
3 V
2.5 V
0
40
6
10
42
IC, COLLECTOR CURRENT (A)
0
60
20
30
50
81357
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
TJ = −40°C
VGE = 10 V
5 V
4.5 V
4 V
3.5 V
3 V
2.5 V
40
10
2
IC, COLLECTOR CURRENT (A)
0
60
20
30
50
81357
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
TJ = 25°C
VGE = 10 V
5 V
4.5 V
4 V
3.5 V
3 V
2.5 V
064
VCC = 14 V
VGE = 5.0 V
RG = 1000 W
350
300
2
TJ = 175°C
175
4Publication Order Number:
NGB8245N/D
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
September 19, 2016 − Rev. 2
NGB8245N
TYPICAL ELECTRICAL CHARACTERISTICS
TJ, JUNCTION TEMPERATURE (°C)
GATE THRESHOLD VOLTAGE (V)
−50 75 100250 125−25 175
Mean + 4 s
Mean − 4 s
Mean
VGE, GATE TO EMITTER VOLTAGE (V)
1.50
0.25
0
2.50
0.75
1.25
2.00
10000
1000
100
10
0.1
6
4
0
8
10
12
Figure 7. Transfer Characteristics Figure 8. Collector−to−Emitter Leakage
Current vs. Temperature
Figure 9. Gate Threshold Voltage vs.
Temperature
Figure 10. Capacitance vs.
Collector−to−Emitter Voltage
Figure 11. Resistive Switching Fall Time vs.
Temperature
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Inductive Switching Fall Time vs.
Temperature
TJ, JUNCTION TEMPERATURE (°C)
COLLECTOR TO EMITTER LEAKAGE
CURRENT (mA)
SWITCHING TIME (ms)
05025−25 125 175
TJ = 175°C
75 100 150
50 7525 100 175150
tfall
VCC = 300 V
VGE = 5.0 V
RG = 1000 W
IC = 9.0 A
L = 300 mH
VCE = 200 V
1.5 3 3.52.5 420.5
20
10
40
0
30
0
VCE = 5 V
IC, COLLECTOR CURRENT (A)
1.0
50 150
0.50
1.00
1.75
2.25
2
125
tdelay
10000
1000
100
10
0.1
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (pF)
01552510 20
Crss
Ciss
Coss
1.0
6
4
0
8
10
12
TJ, JUNCTION TEMPERATURE (°C)
SWITCHING TIME (ms)
7550 100 175150
tfall
VCC = 300 V
VGE = 5.0 V
RG = 1000 W
IC = 9.0 A
RL = 33 W
2
25 125
tdelay
25
15
45
5
35
1
TJ = −40°C
TJ = 25°C
−50
VCE = −24 V
5Publication Order Number:
NGB8245N/D
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
September 19, 2016 − Rev. 2
NGB8245N
0.000001 0.0010.0001 0.1
100
1
0.01
0.01
t,TIME (S)
R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)
110100 1000
0.1
Figure 13. Minimum Pad Transient Thermal Resistance
(Non−normalized Junction−to−Ambient)
10
0.00001
0.2
Single Pulse
0.1
0.05
0.02
0.01
Duty Cycle = 0.5
0.000001 0.0010.0001 0.1
1
0.01
0.01
t,TIME (S)
RqJC(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)
1
0.1
Figure 14. Best Case Transient Thermal Resistance
(Non−normalized Junction−to−Case Mounted on Cold Plate)
0.00001
0.2
Single Pulse
0.1
0.05
0.02
0.01
Duty Cycle = 0.5
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TA = P(pk) RqJA(t)
For D=1: RqJC X R(t) for t ≤0.1 s
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TA = P(pk) RqJC(t)
6Publication Order Number:
NGB8245N/D
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
September 19, 2016 − Rev. 2
NGB8245N
PACKAGE DIMENSIONS
SEATING
PLANE
S
G
D
−T−
M
0.13 (0.005) T
231
4
3 PL
K
J
H
V
E
C
A
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.340 0.380 8.64 9.65
B0.380 0.405 9.65 10.29
C0.160 0.190 4.06 4.83
D0.020 0.035 0.51 0.89
E0.045 0.055 1.14 1.40
G0.100 BSC 2.54 BSC
H0.080 0.110 2.03 2.79
J0.018 0.025 0.46 0.64
K0.090 0.110 2.29 2.79
S0.575 0.625 14.60 15.88
V0.045 0.055 1.14 1.40
−B−
M
B
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
W
W
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
F0.310 0.350 7.87 8.89
L0.052 0.072 1.32 1.83
M0.280 0.320 7.11 8.13
N0.197 REF 5.00 REF
P0.079 REF 2.00 REF
R0.039 REF 0.99 REF
M
L
F
P
U
VIEW W−W
D2PAK 3
CASE 418B−04
ISSUE K
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
17.02
0.67
10.66
0.42
3.05
0.12
5.08
0.20
ǒmm
inchesǓ
SCALE 3:1
Littelfuse.com
7Publication Order Number:
NGB8245N/D
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
September 19, 2016 − Rev. 2
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product
selected for their own applications. Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation,
military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other
application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those
expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any
purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products
used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products
is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse.
